ELANT EL7563CRE-T7, EL7563CRE-T13, EL7563CM-T13, EL7563CM Datasheet
EL7563C
Monolithic 4 Amp DC:DC Step-down Regulator
EL7563C
Features
• Integrated synchronous MOSFETs
and current mode controller
• 4A continuous output current
• Up to 95% efficiency
• Internal patented current sense
• Cycle-by-cycle current limit
• 3V to 3.6V input voltage
• Adjustable output voltage 1V to
2.5V
• Precision reference
• ±0.5% load and line regulation
• Adjustable switching frequency to
1MHz
• Oscillator synchronization
possible
• Internal soft-start
• Over-voltage protection
• Junction temperature indicator
• Over-temperature protection
• Under-voltage lockout
• Multiple supply start-up tracking
• Power-good indicator
• 20-pin SO (0.300”) package
• 28-pin HTSSOP package
Applications
• DSP, CPU Core, and I/O Supplies
• Logic/Bus supplies
• Portable equipment
• DC:DC converter modules
• GTL + Bus power supply
Ordering Information
Part No Package
EL7563CM 20-Pin SO (0.300”) - MDP0027
EL7563CM-T13 20-Pin SO (0.300”) 13” MDP0027
EL7563CRE-T7 28-Pin HTSSOP 7” MDP0048
EL7563CRE-T13 28-Pin HTSSOP 13” MDP0048
Tape &
Reel Outline #
General Description
The EL7563C is an integrated, full-featured synchronous step-down
regulator with output voltage adjustable from 1.0V to 2.5V. It is capable of delivering 4A continuous current at up to 95% efficiency. The
EL7563C operates at a constant frequency pulse width modulation
(PWM) mode, making external synchronization possible. Patented onchip resistorless current sensing enables current mode control, which
provides cycle-by-cycle current limiting, over-current protection, and
excellent step load response. The EL7563C features power tracking,
which makes the start-up sequencing of multiple converters possible.
A junction temperature indicator conveniently monitors the silicon die
temperature, saving the designer time on the tedious thermal characterization. The minimal external components and full functionality
make this EL7563C ideal for desktop and portable applications.
The EL7563C is specified for operation over the full -40°C to +85°C
temperature range.
Typical Application Diagram (EL7563CM)
C5
1
CREF
0.1µF
2
SGND
C4
3
COSC
R4
22Ω
0.22µF
330µF
V
IN
3.3V
Typical Application Diagrams continued on page 3
Manufactured Under U.S. Patent No. 5,7323,974
390pF
4
C2
2.2nF
VS
5
PSHR
6
PGND
7
PGND
8
VIN
9
STP
10
STN
EL7563CM
C3
C1
VDRV
VHI
PGNDP
PGND
PGND
20
EN
19
FB
18
PG
17
16
15
LX
14
LX
13
12
11
D1
C6 C9
0.22µF
L1
4.7µH
C7 R1
330µF
D4
D2
C8
0.22µF
D3
0.1µF
V
OUT
R2
1.54kΩ
1kΩ
2.5V
4A
C10
2.2nF
October 5, 2001
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2001 Elantec Semiconductor, Inc.
EL7563C
Monolithic 4 Amp DC:DC Step-down Regulator
EL7563C
Absolute Maximum Ratings (T
Supply Voltage between VIN or VDD and GND +4.5V
VLX Voltage VIN +0.3V
Input Voltage GND -0.3V, VDD +0.3V
VHI Voltage GND -0.3V, V
= 25°C)
A
LX
Storage Temperature -65°C to +150°C
Operating Ambient Temperature -40°C to +85°C
Operating Junction Temperature +135°C
+6V
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA.
DC Characteristics
V
= V
= 3.3V, TA = TJ = 25°C, C
DD
IN
Parameter Description Conditions Min Typ Max Unit
V
REF
V
REFTC
V
REFLOAD
V
RAMP
I
OSC_CHG
I
OSC_DIS
I
VDD+VDRVVDD+VDRV
I
VDD_OFF
V
DD_OFF
V
DD_ON
T
OT
T
HYS
I
LEAK
I
LMAX
R
DSON
R
DSONTC
I
STP
I
STN
V
PGP
V
PGN
V
PG_HI
V
PG_LO
V
OVP
V
FB
V
FB_LINE
V
FB_LOAD
V
FB_TC
I
FB
V
EN_HI
V
EN_LO
I
EN
Reference Accuracy 1.24 1.26 1.28 V
Reference Temperature Coefficient 50 ppm/°C
Reference Load Regulation 0<I
Oscillator Ramp Amplitude 1.15 V
Oscillator Charge Current 0.1V<V
Oscillator Discharge Current 0.1V<V
Supply Current VEN = 4V, F
V
Standby Current EN = 0 1 1.5 mA
DD
VDD for Shutdown 2.4 2.65 V
VDD for Startup 2.6 2.95 V
Over Temperature Threshold 135 °C
Over Temperature Hysteresis 20 °C
Internal FET Leakage Current EN = 0, LX = 3.3V (low FET), LX = 0V
Peak Current Limit 5 A
FET On Resistance Wafer level test only 30 60 mΩ
R
Tempco 0.2 mΩ/°C
DSON
Auxilliary Supply Tracking Positive Input Pull
Down Current
Auxilliary Supply Tracking Negative Input Pull
Up Current
Positive Power Good Threshold With respect to target output voltage 8 16 %
Negative Power Good Threshold With respect to target output voltage -16 -8 %
Power Good Drive High I
Power Good Drive Low IPG = -1mA 0.5 V
Over Voltage Protection 10 %
Output Initial Accuracy I
Output Line Regulation V
Output Load Regulation 0.5A< I
Output Temperature Stability -40°C < TA<85°C, I
Feedback Input Pull Up Current V
EN Input High Level 2.7 V
EN Input Low Level 1 V
Enable Pull Up Current VEN = 0 -4 -2.5 µA
= 1.2nF, unless otherwise specified.
OSC
(high FET)
V
V
PG
LOAD
<50µA -1 %
REF
<1.25V 200 µA
OSC
<1.25V 8 mA
OSC
= 120kHz 2 3.5 5 mA
OSC
10 µA
= VIN/2 -4 2.5 µA
STP
= VIN/2 2.5 4 µA
STN
= 1mA 2.7 V
= 0A 0.977 0.992 1.007 V
= 3.3V, ∆V
IN
= 0V 100 200 nA
FB
= 10%, I
IN
<4A 0.5 %
LOAD
LOAD
= 0A 0.5 %
LOAD
= 2A ±1 %
2
EL7563C
Monolithic 4 Amp DC:DC Step-down Regulator
Closed Loop AC Electrical Characteristics
VS = V
= 3.3V, TA = TJ = 25°C, C
IN
Parameter Description Conditions Min Typ Max Unit
F
OSC
t
SYNC
M
t
BRM
t
LEB
D
SS
MAX
Oscillator Initial Accuracy 100 115 125 kHz
Minimum Oscillator Sync Width 25 ns
Soft Start Slope 0.5 V/ms
FET Break Before Make Delay 15 ns
High Side FET Minimum On Time 150 ns
Maximum Duty Cycle 95 %
Typical Application Diagrams (Continued)
V
IN
3.3V
= 1.2nF, unless otherwise specified.
OSC
C5
0.1µF
C4
R4
22Ω
0.22µF
C1
330µF
390pF
C3
C2
2.2nF
1
CREF
2
SGND
3
COSC
4
VS
5
PSHR
6
PGND
7
PGND
8
PGND
9
PGND
10
VIN
VDRV
VHI
28
EN
27
FB
26
PG
25
24
23
LX
22
LX
4.7µH
21
LX
20
LX
19
LX
D1
C6 C9
0.22µF
L1
C7 R1
330µF
D4
D2
C8
0.22µF
D3
0.1µF
V
OUT
R2
1.54kΩ
1kΩ
2.5V
4A
C10
2.2nF
EL7563C
11
VIN
12
NC
13
STP
STN
EL7563CRE
For the package information, please refer to the Elantec website at http://www.elantec.com/pages/package_outline.html
PGND
PGND
18
LX
17
NC
16
1514
3
EL7563C
Monolithic 4 Amp DC:DC Step-down Regulator
EL7563C
Pin Descriptions
Pin Number Pin Name Pin Function
1 VREF Bandgap reference bypass capacitor; typically 0.1µF to SGND
2 SGND Control circuit negative supply or signal ground
3 COSC Oscillator timing capacitor (see performance curves)
4 VDD Control circuit positive supply; normally connected to VIN through an RC filter
5 VTJ Junction temperature monitor; connected with 2.2nF to 3.3nF to SGND
6 PGND Ground return of the regulator; connected to the source of the low-side synchronous NMOS power FET
7 PGND Ground return of the regulator; connected to the source of the low-side synchronous NMOS power FET
8 VIN Power supply input of the regulator; connected to the drain of the high-side NMOS power FET
9 STP Auxilliary supply tracking positive input; tied to regulator output to synchronize start up with a second supply; leave open for
10 STN Auxilliary supply tracking negative input; connect to output of a second supply to synchronize start up; leave open for stand
11 PGND Ground return of the regulator; connected to the source of the low-side synchronous NMOS power FET
12 PGND Ground return of the regulator; connected to the source of the low-side synchronous NMOS power FET
13 PGND Ground return of the regulator; connected to the source of the low-side synchronous NMOS power FET
14 LX Inductor drive pin; high current output whose average voltage equals the regulator output voltage
15 LX Inductor drive pin; high current output whose average voltage equals the regulator output voltage
16 VHI Positive supply of high-side driver; boot strapped from VDRV to LX with an external 0.22µF capacitor
17 VDRV Positive supply of low-side driver and input voltage for high side boot strap
18 PG Power good window comparator output; logic 1 when regulator output is within ±10% of target output voltage
19 FB Voltage feedback input; connected to external resistor divider between VOUT and SGND; a 125nA pull-up current forces
20 EN Chip enable, active high; a 2µA internal pull up current enables the device if the pin is left open; a capacitor can be added at
stand alone operation; 2µA internal pull down current
alone operation; 2µA internal pull up current
VOUT to SGND in the event that FB is floating
this pin to delay the start of converter
4
Monolithic 4 Amp DC:DC Step-down Regulator
Typical Performance Curves (20-Pin SO Package)
*Note: The 28-Pin HTSSOP Package Offers Improved Performance
EL7563C
EL7563C
*Efficiency vs I
VIN=3.3V
100
95
90
85
80
75
Efficiency (%)
70
65
Measured with SO20 package Measured with SO20 package
60
0 1 2 2.5 3 3.5 4
*Converter Total Power Loss vs I
VIN=3.3V
1.8
1.6
1.4
1.2
1
0.8
0.6
Power Loss (W)
0.4
0.2
0
0 0.5 1.5 2.5 3 3.5 4
O
VO=2.5V VO=1.8V
VO=1.2V
0.5 1.5
Load Current IO (A)
Measured with SO20 package
1 2
Output Current IO (A)
VO=1V
O
VO=1.8V
VO=1.2V
VO=1V
VO=2.5V
*Efficiency vs I
VO=2.5V
100
95
90
85
80
75
Efficiency (%)
70
65
60
0 1 2 2.5 3 3.5 4
Load Regulation
VO=2.5V
2.505
2.5
2.495
2.49
2.485
2.48
Output Voltage (V)
2.475
2.47
2.465
0.5 1 2 2.5 3 3.5 4
O
VIN=3V
VIN=3.3V
VIN=3.6V
0.5 1.5
Load Current IO (A)
VIN=3.6V
VIN=3.3V
VIN=3V
1.5
Load Current IO (A)
Line Regulation
VO=3.5V
2.505
2.5
2.495
2.49
2.485
(V)
O
V
2.48
2.475
2.47
2.465
IO=0.5A
IO=2A
IO=4A
3 3.1 3.2 3.3 3.4 3.5 3.6
VIN (V)
V
vs Junction Temperature
REF
1.27
1.268
1.266
1.264
(V)
REF
1.262
V
1.26
1.258
1.256
-50 150-10 30 70 110
Junction Temperature (°C)
5
EL7563C
Monolithic 4 Amp DC:DC Step-down Regulator
EL7563C
Typical Performance Curves
*Note: The 28-Pin HTSSOP Package Offers Improved Performance
Switching Frequency vs C
1000
900
800
700
600
(KHz)
S
500
F
400
300
200
100
100 1000200 400 600 800
*θJA vs Copper Area
SO20 Package
50
46
42
38
Thermal Resistance (°C/W)
34
Test Condition:
Chip in the center of copper area
30
1 41.5 2.5 3.5
PCB Copper Heat-Sinking Area (in2)
Transient Response
VIN=3.3V, VO=1.8V, IO=0.2A-4A
OSC
C
(pF)
OSC
with 100 LFPM airflow
2 3
with no airflow
1 oz. copper PCB used
VTJ vs Junction Temperature
1.5
1.3
PSHR
V
1.1
900300 500 700
0.9
0 15025
Switching Waveforms
VIN=3.3V, VO=1.8V, IO=4A
∆VIN
V
LX
i
L
∆V
O
Power-Up
VIN=3.3V, VO=1.8V, IO=0.2A
12550 75 100
Junction Temperature (°C)
I
O
∆V
O
6
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