ELANT EL5410CR-T13, EL5410CR, EL5210CY-T7, EL5210CY-T13, EL5210CY Datasheet

EL5210C/EL5410C

30MHz Rail-to-Rail Input-Output Op Amps

EL5210C/EL5410C

Features

• 30MHz -3dB bandwidth

• Supply voltage = 4.5V to 16.5V

• Low supply current (per amplifier)

= 2.5mA

• High slew rate = 33V/µs

• Unity-gain stable

• Beyond the rails input capability

• Rail-to-rail output swing

• Available in both standard and

space-saving fine pitch packages

Applications

• Driver for A-to-D Converters

• Data Acquisition

• Video Processing

• Audio Processing

• Active Filters

• Tes t Equi p ment

• Battery Powered Applications

• Portable Equipment

Ordering Information

Part No. Package Tape & Re el Outline #

EL5210CS 8-Pin SOIC - MDP0027

EL5210CS-T13 8-Pin SOIC 13” MDP0027

EL5210CY 8-Pin MSOP - MDP0043

EL5210CY-T7 8-Pin MSOP 7” MDP0043

EL5210CY-T13 8-Pin MSOP 13” MDP0043

EL5410CS 14-Pin SOIC - MDP0027

EL5410CS-T13 14-Pin SOIC 13” MDP0027

EL5410CR 14-Pin TSSOP - MDP0044

EL5410CR-T13 14-Pin TSSOP 13” MDP0044

General Description

The EL5210C and EL5410C are low power, high voltage rail-to-rail
input-output amplifiers. The EL5210C contains two amplifiers in one
package and the EL5410C contains four amplifiers. Operating on sup­plies ranging from 5V to 15V, while consuming only 2.5mA per
amplifier, the EL5410C and EL5210C have a bandwidth of 30MHz --
(-3dB). They also provide common mode input ability beyond the sup­ply rails, as well as rail-to-rail output capability. This enables these
amplifiers to offer maximum dynamic range at any supply voltage.

The EL5410C and EL5210C also feature fast slewing and settling
times, as well as a high output drive capability of 30mA (sink and
source). These features make these amplifiers ideal for high speed fil­tering and signal conditioning application. Other applications include
battery power, portable devices, and anywhere low power consump­tion is important.

The EL5410C is available in a space-saving 14-Pin TSSOP package,
as well as the industry-standard 14-Pin SOIC. The EL5210C is avail­able in the 8-Pin MSOP and 8-Pin SOIC packages. Both feature a
standard operational amplifier pin out. These amplifiers operate over a
temperature range of -40°C to +85°C.

Connection Diagram

VOUTA

1

VINA-

2

VINA+

VINB+

VINB-

VOUTB

-

3

+

4

5

+

6

-

7

EL5410C (TSSOP-14, SOIC-14)

VOUTD

14

VIND-

13

-

VIND+

12

+

11

VS-VS+

VINC+

10

+

VINC-

9

-

VOUTC

8

1

VOUTA

2

VINA-

VINA+

-

+

3

4

VS-

EL5210C (MSOP-8, SOIC-8)

8

VS+

7

VOUTB

6

-

VINB-

+

5

VINB+

November 16, 2000

Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these

specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.

© 2000 Elantec Semiconductor, Inc.

EL5210C/EL5410C

30MHz Rail-to-Rail Input-Output Op Amps

Absolute Maximum Ratings (T

Values beyond absolute maximum ratings can cause the device to be pre­maturely damaged. Absolute maximum ratings are stress ratings only and

EL5210C/EL5410C

functional device operation is not implied.

Supply Voltage between V

Input Voltage V

Maximum Continuous Output Current 30mA

+ and VS- +18V

S

= 25°C)

A

- - 0.5V, VS +0.5V

S

Maximum Die Temperature +125°C

Storage Temperature -65°C to +150°C

Operating Temperature -40°C to +85°C

Power Dissipation See Curves

ESD Voltage 2kV

Important Note:

All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: T

= TC = T

J

A

Electrical Characteristics

VS+ = +5V, VS - = -5V, RL = 1kΩ and CL = 12pF to 0V, TA = 25°C unless otherwise specified.

Parameter Description Condition Min Typ Max Unit

Input Characteristics

V

OS

TCV

I

B

R

IN

C

IN

CMIR Common-Mode Input Range -5.5 +5.5 V

CMRR Common-Mode Rejection Ratio for V

A

VOL

Output Characteristics

V

OL

V

OH

I

SC

I

OUT

Power Supply Performance

PSRR Power Supply Rejection Ratio V

I

S

Dynamic Performance

SR Slew Rate

t

S

BW -3dB Bandwidth 30 MHz

GBWP Gain-Bandwidth Product 20 MHz

PM Phase Margin 50 °

CS Channel Separation f = 5MHz 110 dB

d

G

d

P

1. Measured over operating temperature range

2. Slew rate is measured on rising and falling edges

3. NTSC signal generator used

Input Offset Voltage V

Average Offset Voltage Drift

OS

Input Bias Current V

[1]

= 0V 3 15 mV

CM

7µV/°C

= 0V 2 60 nA

CM

Input Impedance 1GΩ

Input Capacitance 2pF

from -5.5V to 5.5V 50 70 dB

Open-Loop Gain -4.5V ≤ V

IN

≤ 4.5V 65 80 dB

OUT

Output Swing Low IL = -5mA -4.9 -4.8 V

Output Swing High IL = 5mA 4.8 4.9 V

Short Circuit Current ±120 mA

Output Current ±30 mA

is moved from ±2.25V to ±7.75V 60 80 dB

S

Supply Current (Per Amplifier) No Load 2.5 3.75 mA

[2]

-4.0V ≤ V

≤ 4.0V, 20% o 80% 33 V/µs

OUT

Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 ns

Differential Gain

Differential Phase

[3]

[3]

RF = RG = 1kΩ and V

RF = RG = 1kΩ and V

= 1.4V 0.12 %

OUT

= 1.4V 0.17 °

OUT

2

EL5210C/EL5410C

30MHz Rail-to-Rail Input-Output Op Amps

Electrical Characteristics

VS+ = 5V, VS- = 0V, RL = 1kΩ and CL = 12pF to 2.5V, TA = 25°C unless otherwise specified.

Parameter Description Condition Min Typ Max Unit

Input Characteristics

V

OS

TCV

OS

I

B

R

IN

C

IN

CMIR Common-Mode Input Range -0.5 +5.5 V

CMRR Common-Mode Rejection Ratio for V

A

VOL

Output Characteristics

V

OL

V

OH

I

SC

I

OUT

Power Supply Performance

PSRR Power Supply Rejection Ratio V

I

S

Dynamic Performance

SR Slew Rate

t

S

BW -3dB Bandwidth 30 MHz

GBWP Gain-Bandwidth Product 20 MHz

PM Phase Margin 50 °

CS Channel Separation f = 5MHz 110 dB

d

G

d

P

1. Measured over operating temperature range

2. Slew rate is measured on rising and falling edges

3. NTSC signal generator used

Input Offset Voltage V

Average Offset Voltage Drift

[1]

Input Bias Current V

= 2.5V 3 15 mV

CM

7µV/°C

= 2.5V 2 60 nA

CM

Input Impedance 1GΩ

Input Capacitance 2pF

from -0.5V to 5.5V 45 66 dB

Open-Loop Gain 0.5V ≤ V

IN

≤ 4.5V 65 80 dB

OUT

Output Swing Low IL = -5mA 100 200 mV

Output Swing High IL = 5mA 4.8 4.9 V

Short Circuit Current ±120 mA

Output Current ±30 mA

is moved from 4.5V to 15.5V 60 80 dB

S

Supply Current (Per Amplifier) No Load 2.5 3.75 mA

[2]

1V ≤ V

≤ 4V, 20% o 80% 33 V/µs

OUT

Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 ns

Differential Gain

Differential Phase

[3]

[3]

RF = RG = 1kΩ and V

RF = RG = 1kΩ and V

= 1.4V 0.30 %

OUT

= 1.4V 0.66 °

OUT

EL5210C/EL5410C

3

EL5210C/EL5410C

30MHz Rail-to-Rail Input-Output Op Amps

Electrical Characteristics

VS+ = 15V, VS- = 0V, RL = 1kΩ and CL = 12pF to 7.5V, TA = 25°C unless otherwise specified.

EL5210C/EL5410C

Parameter Description Condition Min Typ Max Unit

Input Characteristics

V

OS

TCV

I

B

R

IN

C

IN

CMIR Common-Mode Input Range -0.5 +15.5 V

CMRR Common-Mode Rejection Ratio for V

A

VOL

Output Characteristics

V

OL

V

OH

I

SC

I

OUT

Power Supply Performance

PSRR Power Supply Rejection Ratio V

I

S

Dynamic Performance

SR Slew Rate

t

S

BW -3dB Bandwidth 30 MHz

GBWP Gain-Bandwidth Product 20 MHz

PM Phase Margin 50 °

CS Channel Separation f = 5MHz 110 dB

d

G

d

P

1. Measured over operating temperature range

2. Slew rate is measured on rising and falling edges

3. NTSC signal generator used

Input Offset Voltage V

Average Offset Voltage Drift

OS

Input Bias Current V

[1]

= 7.5V 3 15 mV

CM

7µV/°C

= 7.5V 2 60 nA

CM

Input Impedance 1GΩ

Input Capacitance 2pF

from -0.5V to 15.5V 53 72 dB

Open-Loop Gain 0.5V ≤ V

IN

≤ 14.5V 65 80 dB

OUT

Output Swing Low IL = -7.5mA 170 350 mV

Output Swing High IL = 7.5mA 14.65 14.83 V

Short Circuit Current ±120 mA

Output Current ±3 0 mA

is moved from 4.5V to 15.5V 60 80 dB

S

Supply Current (Per Amplifier) No Load 2.5 3.75 mA

[2]

1V ≤ V

≤ 14V, 20% o 80% 33 V/µ s

OUT

Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 n s

Differential Gain

Differential Phase

[3]

[3]

RF = RG = 1kΩ and V

RF = RG = 1kΩ and V

= 1.4V 0.10 %

OUT

= 1.4V 0.11 °

OUT

4

Typical Performance Curves

EL5210C/EL5410C

EL5210C/EL5410C

30MHz Rail-to-Rail Input-Output Op Amps

EL5410C Input Offset Voltage Distribution

500

246

Typical
Production
Distortion

VS=±5V
T

=25°C

A

400

300

200

Quantity (Amplifiers)

100

0

5

4

3

2

Input Offset Voltage (mV)

1

0

-8-6-4-2-0

-12

-10
Input Offset Voltage (mV)

Input Offset Voltage vs Temperature

-50 -10 30 70 110 150
Temperature (°C)

EL5410C Input Offset Voltage Drift

25

VS=±5V

20

15

10

Quantity (Amplifiers)

5

8

10

12

0

1

3

5

7

9

Input Offset Voltage Drift, TCVOS(µV/°C)

Input Bias Current vs Temperature

0.008

0.004

VS=±5V

0

-0.004

Input Bias Current (µA)

-0.008

-0.012

-50 -10 30 70 110 150
Temperature (°C)

Typical
Production
Distortion

11

13

15

17

19

21

Output High Voltage vs Temperature

4.96

4.95

4.94

4.93

Output High Voltage (V)

4.92

4.91

-50 -10 30 70 110 150
Temperature (°C)

VS=±5V
I

OUT

=5mA

Output Low Voltage vs Temperature

-4.85

-4.87

-4.89

-4.91

Output Low Voltage (V)

-4.93

-4.95

VS=±5V

I

=5mA

OUT

-50 -10 30 70 110 150
Temperature (°C)

5