ELANT EL5221CY-T7, EL5221CY-T13, EL5221CW-T13 Datasheet

EL5221C

Dual 12MHz Rail-to-Rail Input-Output Buffer

EL5221C

Features

• 12MHz -3dB bandwidth

• Unity gain buffer

• Supply voltage = 4.5V to 16.5V

• Low supply current (per buffer) =

500µA

• High slew rate = 10V/µs

• Rail-to-rail operation

Applications

• TFT-LCD drive circuits

• Electronics notebooks

• Electronics games

• Personal communication devices

• Personal Digital Assistants (PDA)

• Portable instrumentation

• Wireless LANs

• Office automation

• Active filters

• ADC/DAC buffer

Ordering Information

Part No. Package Tape & Re el Outline #

EL5221CW-T7 SOT23-6 7” MDP0038

EL5221CW-T13 SOT23-6 13” MDP0038

EL5221CY-T7 MSOP-8 7” MDP0043

EL5221CY-T13 MSOP-8 13” MDP0043

General Description

The EL5221C is a dual, low power, high voltage rail-to-rail input-out­put buffer. Operating on supplies ranging from 5V to 15V, while
consuming only 500µA per channel, the EL5221C has a bandwidth of
12MHz (-3dB). The EL5221C also provides rail-to-rail input and out­put ability, giving the maximum dynamic range at any supply voltage.

The EL5221C also features fast slewing and settling times, as well as
a high output drive capability of 30mA (sink and source). These fea­tures make the EL5221C ideal for use as voltage reference buffers in
Thin Film Transistor Liquid Crystal Displays (TFT-LCD). Other
applications include battery power, portable devices, and anywhere
low power consumption is important.

The EL5221C is available in space-saving SOT23-6 and MSOP-8
packages and operates over a temperature range of -40°C to +85°C.

Connection Diagrams

VINA

VS-

VINB

1

2

3

6

5

4

VOUTA

VS+

VOUTB

SOT23-6

1

VOUTA

2

NC

3

VINA

4

MSOP-8

Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.

© 2000 Elantec Semiconductor, Inc.

8

7

6

5

VS+

VOUTB

NC

VINBVS-

November 7, 2000

EL5221C

Dual 12MHz Rail-to-Rail Input-Output Buffer

EL5221C

Absolute Maximum Ratings (T

Values beyond absolute maximum ratings can cause the device to be pre­maturely damaged. Absolute maximum ratings are stress ratings only and
functional device operation is not implied

Supply Voltage between V

Input Voltage V

Maximum Continuous Output Current 30mA

Important Note:

All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: T

+ and VS- +18V

S

= 25°C)

A

- - 0.5V, VS+ +0.5V

S

= TC = T

J

A

Maximum Die Temperature +125°C

Storage Temperature -65°C to +150°C

Operating Temperature -40°C to +85°C

Power Dissipation See Curves

ESD Voltage 2kV

Electrical Characteristics

VS+ = +5V, VS- = -5V, RL = 10kΩ and CL = 10pF to 0V, TA = 25°C unless otherwise specified.

Parameter Description Condition Min Typ Max Unit

Input Characteristics

V

OS

TCV

I

B

R

IN

C

IN

A

V

Output Characteristics

V

OL

V

OH

I

SC

Power Supply Performance

PSRR Power Supply Rejection Ratio V

I

S

Dynamic Performance

SR Slew Rate

t

S

BW -3dB Bandwidth R

CS Channel Separation f = 5MHz 75 dB

1. Measured over the operating temperature range

2. Slew rate is measured on rising and falling edges

Input Offset Voltage V

Average Offset Voltage Drift

OS

Input Bias Current V
Input Impedance 1GΩ

Input Capacitance 1.35 pF Voltage Gain -4.5V ≤ V

Output Swing Low IL = -5mA -4.92 -4.85 V

Output Swing High IL = 5mA 4.85 4.92 V

Short Circuit Current Short to GND ±120 mA

Supply Current (Per Buffer) No Load 500 750 µA

[2]

Settling to +0.1% VO=2V Step 500 ns

= 0V 2 12 mV

CM

[1]

= 0V 2 50 nA

CM

≤ 4.5V 0.995 1.005 V/V

OUT

is moved from ±2.25V to ±7.75V 60 80 dB

S

-4.0V ≤ V

= 10kΩ, CL = 10pF 12 MHz

L

≤ 4.0V, 20% to 80% 7 10 V/µs

OUT

5µV/°C

2

EL5221C

Dual 12MHz Rail-to-Rail Input-Output Buffer

Electrical Characteristics

VS+ = +5V, VS- = 0V, RL = 10kΩ and CL = 10pF to 2.5V, TA = 25°C unless otherwise specified.

Parameter Description Condition Min Typ Max Unit

Input Characteristics

V

OS

TCV

OS

I

B

R

IN

C

IN

A

V

Output Characteristics

V

OL

V

OH

I

SC

Power Supply Performance

PSRR Power Supply Rejection Ratio V

I

S

Dynamic Performance

SR Slew Rate

t

S

BW -3dB Bandwidth R

CS Channel Separation f = 5MHz 75 dB

1. Measured over the operating temperature range

2. Slew rate is measured on rising and falling edges

Input Offset Voltage V

Average Offset Voltage Drift

Input Bias Current V
Input Impedance 1GΩ

Input Capacitance 1.35 pF Voltage Gain 0.5 ≤ V

Output Swing Low IL = -5mA 80 150 mV

Output Swing High IL = 5mA 4.85 4.92 V

Short Circuit Current Short to GND ±120 mA

Supply Current (Per Buffer) No Load 500 750 µ A

[2]

Settling to +0.1% VO = 2V Step 500 ns

= 2.5V 2 10 mV

CM

[1]

= 2.5V 2 50 nA

CM

≤ 4.5V 0.995 1.005 V/V

OUT

is moved from 4.5V to 15.5V 60 80 dB

S

1V ≤ V

≤4V, 20% to 80% 7 10 V/µs

OUT

= 10 kΩ, CL = 10pF 12 MHz

L

5µV/°C

EL5221C

3

EL5221C

Dual 12MHz Rail-to-Rail Input-Output Buffer

EL5221C

Electrical Characteristics

VS+ = +15V, VS- = 0V, RL = 10kΩ and CL = 10pF to 7.5V, TA = 25°C unless otherwise specified.

Parameter Description Condition Min Typ Max Unit

Input Characteristics

V

OS

TCV

OS

I

B

R

IN

C

IN

A

V

Output Characteristics

V

OL

V

OH

I

SC

Power Supply Performance

PSRR Power Supply Rejection Ratio V

I

S

Dynamic Performance

SR Slew Rate

t

S

BW -3dB Bandwidth R

CS Channel Separation f = 5MHz 75 dB

1. Measured over the operating temperature range

2. Slew rate is measured on rising and falling edges

Input Offset Voltage V

Average Offset Voltage Drift

Input Bias Current V
Input Impedance 1GΩ

Input Capacitance 1.35 pF Voltage Gain 0.5 ≤ V

Output Swing Low IL = -5mA 80 150 mV

Output Swing High IL = 5mA 14.85 14.92 V

Short Circuit Current Short to GND ±120 mA

Supply Current (Per Buffer) No Load 500 750 µ A

[2]

Settling to +0.1% VO = 2V Step 500 ns

= 7.5V 2 14 mV

CM

[1]

= 7.5V 2 50 nA

CM

≤ 14.5V 0.995 1.005 V/V

OUT

is moved from 4.5V to 15.5V 60 80 dB

S

1V ≤ V

≤14V, 20% to 80% 7 10 V/µ s

OUT

= 10 kΩ, CL = 10pF 12 MHz

L

5µV/°C

4