ELANT EL5181CS-T7, EL5181CS-T13, EL5181CS Datasheet

EL5181C
8ns High-Speed Comparator
EL5181C
Features
• 8ns Typ. Propagation Delay
• 5V to 12V Input Supply
• +2.7V to +5V Output Supply
• True-to-ground Input
• Rail-to-rail Outputs
• Active Low Latch
• Dual Available (EL5281C)
• Window Comparator (EL5283C)
• Quad Available (EL5481C & EL5482C)
• Pin-compatible 4ns Family Available (EL5x85C, EL5287C & EL5486C)
Applications
• Threshold Detection
• High Speed Sampling Circuits
• High Speed Triggers
• Line Receivers
• PWM Circuits
• High Speed V/F Converters
Ordering Information
Part No. Package Tape & Reel Outline #
EL5181CS 8-Pin SO - MDP0027 EL5181CS-T7 8-Pin SO 7” MDP0027 EL5181CS-T13 8-Pin SO 13” MDP0027
General Description
The EL5181C comparator is designed for operation in single supply and dual supply applications with 5V to 12V between VS+ and VS-. For single supplies, the inputs can operate from 0.1V below ground for use in ground sensing applications.
The output side of the comparator can be supplied from a single sup­ply of 2.7V to 5V. The rail-to-rail output swing enables direct connection of the comparator to both CMOS and TTL logic circuits.
The latch input of the EL5181C can be used to hold the comparator output value by applying a low logic level to the pin.
The EL5181C is available in the 8-pin SO package and is specified for operation over the full -40°C to +85°C temperature range. Also avail­able are a dual (EL5281C), a window comparator (EL5283C), and quad versions (EL5481C and EL5482C).
Pin Configuration
VS+
1
IN+
2
+
IN-
VS-
-
3
4
8
VSD
L
OUT
7
A T C
GND
6
H
LATCH
5
EL5181CS
(8-Pin SO)
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2001 Elantec Semiconductor, Inc.
June 14, 2001
EL5181C
8ns High-Speed Comparator
EL5181C
Absolute Maximum Ratings (T
Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Analog Supply Voltage (VS+ to VS-) +12.6V Digital Supply Voltage (VSD to GND) +7V Differential Input Voltage [(VS-) -0.2V] to [(VS+) +0.2V]
= 25°C)
A
Common-mode Input Voltage [(VS-) -0.2V] to [(VS+) +0.2V] Latch Input Voltage -0.2V to [(VSD) +0.2V] Storage Temperature Range -65°C to +150°C Ambient Operating Temperature -40°C to +85°C Operating Junction Temperature 125°C Power Dissipation See Curves
Important Note: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA.
Electrical Characteristics
VS = ±5V, VSD = 5V, RL = 2.3k, CL = 15pF, TA = 25°C, unless otherwise specified.
Parameter Description Condition Min Typ Max Unit
Input
V
OS
I
B
C
IN
I
OS
V
CM
CMRR Common-mode Rejection Ratio -5.1V < V
Output
V
OH
V
OL
Dynamic Performance
tpd+ Positive Going Delay Time VIN = 1V tpd- Negative Going Delay Time VIN = 1V
Supply
IS+ Positive Analog Supply Current 7 8.2 mA IS- Negative Analog Supply Current 5 6.5 mA I
SD
PSRR Power Supply Rejection Ratio 60 80 dB
Latch
V
LH
V
LL
I
LH
I
LL
td+ Latch Disable to High Delay 6 ns td- Latch Disable to Low Delay 6 ns t
s
t
h
tpw(D) Minimum Latch Disable Pulse Width 10 ns
Input Offset Voltage V
= 0V, VO = 2.5V 1 4 mV
CM
Input Bias Current -6 -3.5 µA Input Capacitance 5 pF Input Offset Current V
= 0V, VO = 2.5V -2.5 0.5 2.5 µA
CM
Input Voltage Range (VS-) - 0.1 (VS+) - 2.25 V
< +2.75V 65 90 dB
CM
Output High Voltage V Output Low Voltage V
> 250mV VSD - 0.6 VSD - 0.4 V
IN
> 250mV GND + 0.25 GND + 0.5 V
IN
, VOD = 50mV 8 12 ns
P-P
, VOD = 50mV 8 12 ns
P-P
Digital Supply Current Output high 4 5 mA
Output low 0.75 1 mA
Latch Input Voltage High 2.0 V Latch Input Voltage Low 0.8 V Latch Input Current High V Latch Input Current Low V
= 3.0V -30 -18 µA
LH
= 0.3V -30 -24 µA
LL
Minimum Setup Time 2 ns Minimum Hold Time 1 ns
2
Typical Performance Curves
EL5181C
EL5181C
8ns High-Speed Comparator
Positive Supply Current vs Temperature
7.15
7.1
7.05 7
6.95
+ (mA)
6.9
S
I
6.85
6.8
6.75
6.7
-50 -30 -10 10 30 50 70 90 Temperature (°C)
Positive Supply Current vs Supply Voltage
7
VS-=-5V VSD=5V
6
VIN=50mV TA=25°C
5
4
+ (mA)
S
3
I
2
1
0
0 71 2 3 4 5 6
VS+ (V)
Input Bias Current vs Temperature
6
5
4
3
IB (µA)
2
1
0
-50 -30 -10 10 30 50 70 90 Temperature (°C)
Negative Supply Current vs Temperature
-4.4
-4.5
-4.6
-4.7
-4.8
- (mA)
S
I
-4.9
-5
-5.1
-5.2
-50 -30 -10 10 30 50 70 90 Temperature (°C)
Negative Supply Current vs Negative Supply Voltage
5.5 VS+=5V
VSD=5V
5
VIN=50mV TA=25°C
4.5
- (mA)
S
I
4
3.5
3
0 71 2 3 4 5 6
VS- (V)
Offset Voltage vs Temperature
0.7
0.6
0.5
0.4
0.3
(mV)
0.2
OS
V
0.1
0
-0.1
-0.2
-0.3
-50 -30 -10 10 30 50 70 90 Temperature (°C)
3
EL5181C
8ns High-Speed Comparator
EL5181C
Typical Performance Curves
Propagation Delay vs Overdrive
10
VS=±5V
9.5
VSD=5V VIN=1V Step
9
RL=2.2k
8.5 8
7.5 7
Delay Time (ns)
6.5 6
5.5 5
0 100 200 300 400 500 600
Propagation Delay vs Supply Voltage
10
VSD=VS+
9.5
VIN=1V Step VOD=50mV
9
RL=2.2k
8.5 8
7.5 7
Delay Time (ns)
6.5 6
5.5 5
4 4.5 5 5.5 6
Tpd+
Tpd-
VOD (mV)
Tpd+
Tpd-
±VS (V)
Propagation Delay vs Load Capacitance
12
VS=±5V VSD=5V
11
RL=2.2k VIN=1V Step VOD=50mV
10
9
Delay Time (ns)
8
7
6
0 20 40 60 80 100 120
Propagation Delay vs Overdrive
10
9.5 9
8.5 8
7.5
Delay Time (ns)
VS=±5V
7
VSD=5V VIN=3V Step
6.5
RL=2.2k
6
0 0.2 0.6 1 1.2 1.6 2
0.4 0.8 1.4 1.8
Tpd+
Tpd-
C
LOAD
VOD (V)
(pF)
Tpd+
Tpd-
Propagation Delay vs Overdrive
11
VS=±5V
10.5
VSD=5V RL=2.2k
10
VIN=5V Step
9.5 9
8.5
Delay Time (ns)
8
7.5 7
0 0.5 1 2 3
Tpd+
Tpd-
1.5 2.5
VOD (V)
Propagation Delay vs Source Resistance
20
VS=±5V
18
VSD=5V RL=2.2k
16
VIN=1V Step VOD=50mV
14 12 10
Delay Time (ns)
8 6 4
0 0.2 0.4 1 1.6
Tpd+
Tpd-
0.6 1.41.20.8
Source Resistance (kΩ)
4
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