EL2228C - Preliminary
Dual Low Noise Amplifier
EL2228C - Preliminary
Features
• Voltage noise of only 4.9nV/√Hz
• Current noise of only 1.2pA/√Hz
• Bandwidth (-3dB) of 80MHz -
@AV = +1
• Gain-of-1 stable
• Just 4.5mA per amplifier
• 8-pin MSOP package
• ±2.5V to ±12V operation
Applications
• ADSL Filters
• HDSLII Filters
• Ultrasound input amplifiers
• Wideband Instrumentation
• Communications equipment
• Wideband sensors
Ordering Information
Part No. Temp. Range Package Outline #
EL2228CY 8-Pin MSOP - MDP0043
EL2228CY-T13 8-Pin MSOP 13” MDP0043
EL2228CY-T7 8-Pin MSOP 7” MDP0043
EL2228CS 8-Pin SO - MDP0027
EL2228CS-T13 8-Pin SO 13” MDP0027
EL2228CS-T7 8-Pin SO 7” MDP0027
General Description
The EL2228C is a dual, low-noise amplifier, ideally suited to filtering
applications in ADSL and HDSLII designs. It feature low noise speci-
fication of just 4.9nV/√Hz and 1.2pA/√Hz, making it ideal for
processing low voltage waveforms.
The EL2228C has a -3dB bandwidth of 80MHz and is gain-of-1 stable. It also affords minimal power dissipation with a supply current of
just 4.5mA per amplifier. The amplifier can be powered from supplies
ranging from ±2.5V to ±12V.
The EL2228C is available in a space saving 8-Pin MSOP package as
well as the industry standard 8-Pin SO. It can operate over the -40°C to
+85°C temperature range.
Connection Diagram
1
VOUTA
2
VINA-
VINA+
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2001 Elantec Semiconductor, Inc.
+
3
4
VS-
EL2228C
8-Pin SO and 8-Pin MSOP
8
VS+
7
VOUTB
65-
VINB-
+
VINB+
September 25, 2001
EL2228C - Preliminary
Dual Low Noise Amplifier
Absolute Maximum Ratings (T
Values beyond absolute maximum ratings can cause the device to be prematurely damaged. Absolute maximum ratings are stress ratings only
and functional device operation is not implied.
Supply Voltage between VS+ and VS- +28V
EL2228C - Preliminary
Input Voltage VS- - 0.3V, VS +0.3V
Maximum Continuous Output Current 40mA
= 25°C)
A
Maximum Die Temperature +125°C
Storage Temperature -65°C to +150°C
Operating Temperature -40°C to +85°C
Lead Temperature 260°C
Power Dissipation See Curves
ESD Voltage 2kV
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = T
A
Electrical Characteristics
VS+= +12V, VS - = -12V, R
Parameter Description Condition Min Typ Max Unit
Input Characteristics
V
OS
TCV
I
B
R
IN
C
IN
Input Offset Voltage V
Average Offset Voltage Drift
OS
Input Bias Current V
Input Impedance 8 MΩ
Input Capacitance 1 pF
CMIR Common-Mode Input Range -11.8 +10.4 V
CMRR Common-Mode Rejection Ratio for VIN from -11.8V to +10.4V 60 90 dB
A
VOL
e
n
i
n
Open-Loop Gain -5V ≤ V
Voltage Noise f = 100kHz 4.9 nV/√Hz
Current Noise f = 100kHz 1.2 pA/√Hz
Output Characteristics
V
OL
V
OH
I
SC
Output Swing Low R
Output Swing High R
Short Circuit Current R
Power Supply Performance
PSRR Power Supply Rejection Ratio VS is moved from ±10.8V to ±13.2V 65 83 dB
I
S
Supply Current (Per Amplifier) No load 4 5 6 mA
Dynamic Performance
SR Slew Rate
t
S
Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 50 ns
BW -3dB Bandwidth 80 MHz
HD2 2nd Harmonic Distortion f = 1MHz, VO = 2V
HD3 3rd Harmonic Distortion f = 1MHz, VO = 2V
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
= 500Ω and C
L
[2]
= 3pF to 0V, R
L
= 420Ω & T
F
= 0V 0.2 3 mV
CM
[1]
= 0V -9 -4.5 -1 µA
CM
= 25°C unless otherwise specified.
A
-4 µV/°C
for VIN from -10V to +10V 60 75 dB
≤ 5V 60 75 dB
OUT
= 500Ω -10.3 -10 V
L
R
= 250Ω -9.5 -9 V
L
= 500Ω 10 10.3 V
L
R
= 250Ω 9.5 10 V
L
= 10Ω 140 180 mA
L
±2.5V square wave, measured 25%-75% 44 65 V/µs
, R
f = 1MHz, VO = 2V
f = 1MHz, VO = 2V
P-P
P-P
P-P
P-P
L
, R
L
, R
L
, R
L
= 500Ω, A
= 150Ω, A
= 500Ω, A
= 150Ω, A
= 2 -86 dBc
V
= 2 -79 dBc
V
= 2 -93 dBc
V
= 2 -70 dBc
V
2
EL2228C - Preliminary
Dual Low Noise Amplifier
Electrical Characteristics
VS+= +5V, VS - = -5V, R
Parameter Description Condition Min Typ Max Unit
Input Characteristics
V
OS
TCV
OS
I
B
R
IN
C
IN
CMIR Common-Mode Input Range -4.7 +3.4 V
CMRR Common-Mode Rejection Ratio for VIN from -4.7V to +3.4V 60 90 dB
A
VOL
e
n
i
n
Output Characteristics
V
OL
V
OH
I
SC
Power Supply Performance
PSRR Power Supply Rejection Ratio VS is moved from ±4.5V to ±5.5V 65 83 dB
I
S
Dynamic Performance
SR Slew Rate
t
S
BW -3dB Bandwidth 75 MHz
HD2 2nd Harmonic Distortion f = 1MHz, VO = 2V
HD3 3rd Harmonic Distortion f = 1MHz, VO = 2V
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
= 500Ω and C
L
Input Offset Voltage V
Average Offset Voltage Drift
Input Bias Current V
= 3pF to 0V, R
L
= 420Ω & T
F
CM
[1]
CM
= 25°C unless otherwise specified.
A
= 0V 0.6 3 mV
4.9 µV/°C
= 0V -9 -4.5 -1 µA
Input Impedance 6 MΩ
Input Capacitance 1.2 pF
for VIN from -2V to +2V dB
Open-Loop Gain -2.5V ≤ V
≤ 2.5V 60 72 dB
OUT
Voltage Noise f = 100kHz 4.7 nV/√Hz
Current Noise f = 100kHz 1.2 pA/√Hz
Output Swing Low R
Output Swing High R
Short Circuit Current R
= 500Ω -3.8 -3.5 V
L
R
= 250Ω -3.7 -3.5 V
L
= 500Ω 3.5 3.7 V
L
R
= 250Ω 3.5 3.6 V
L
= 10Ω 60 100 mA
L
Supply Current (Per Amplifier) No load 3.5 4.5 5.5 mA
[2]
±2.5V square wave, measured 25%-75% 35 50 V/µs
Settling to +0.1% (AV = +1) (AV = +1), VO = 2V step 50 ns
, R
f = 1MHz, VO = 2V
f = 1MHz, VO = 2V
P-P
P-P
P-P
P-P
= 500Ω, A
L
, R
= 150Ω, A
L
, R
= 500Ω, A
L
, R
= 150Ω, A
L
= 2 -90 dBc
V
= 2 -71 dBc
V
= 2 -99 dBc
V
= 2 -69 dBc
V
EL2228C - Preliminary
3
EL2228C - Preliminary
Dual Low Noise Amplifier
Typical Performance Curves
Non-inverting Frequency Response for Various R
EL2228C - Preliminary
4
3
2
1
0
-1
-2
-3
Normalized Gain (dB)
-4
VS=±12V
AV=+1
-5
RL=500Ω
-6
100k 1M
Non-inverting Frequency Response (Gain)
4
VS=±12V
3
RF=420Ω
RL=500Ω
2
AV=+1
1
0
-1
-2
-3
Normalized Gain (dB)
-4
-5
-6
100k 1M 10M
AV=10
RF=200Ω
RF=0Ω
Frequency (Hz)
AV=5
Frequency (Hz)
10M
AV=1
F
RF=1kΩ
RF=420Ω
100M
AV=2
100M
Inverting Frequency Response for Various R
4
3
2
1
0
-1
-2
-3
Normalized Gain (dB)
-4
-5
-6
1M 10M
Inverting Frequency Response (Gain)
4
3
2
1
0
-1
-2
-3
Normalized Gain (dB)
-4
-5
-6
100k 1M 10M
RF=100Ω RF=420Ω
RF=1kΩ
VS=±12V
AV=-1
RL=500Ω
VS=±12V
RF=420Ω
AV=-10
AV=-5
Frequency (Hz)
Frequency (Hz)
F
100M
AV=-1
AV=-2
100M
Non-inverting Frequency Response (Phase)
135
90
45
0
-45
-90
Phase (°)
-135
-180
-225
VS=±12V
RF=420Ω
-270
RL=500Ω
-315
100k 1M 10M
AV=5
AV=10
Frequency (Hz)
AV=1
AV=2
100M
Inverting Frequency Response (Phase)
135
90
45
0
-45
-90
Phase (°)
-135
-180
-225
VS=±12V
RF=420Ω
-270
RL=500Ω
-315
100k
AV=-1
AV=-2
AV=-5
AV=-10
10M1M 100M
Frequency (Hz)
4