ELANT EL2126CN, EL2126CW, EL2126CS Datasheet
EL2126C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
EL2126C - Preliminary
Features
• Voltage noise of only 1.3nV/√Hz
• Current noise of only 1.2pA/√Hz
• Low offset voltage ≤200µV
• 90MHz -3dB BW for AV=10
• Very low supply current -4.7mA
• SOT23 package
• ±5V to ±15V operation
Applications
• Ultrasound input amplifiers
• Wideband instrumentation
• Communication equipment
• AGC & PLL active filters
• Wideband sensors
Ordering Information
Part No Package Tape & Reel Outline #
EL2126CW 5-Pin SOT23 MDP0038
EL2126CS 8-Pin SO MDP0027
EL2126CN 8-Pin PDIP MDP0031
General Description
The EL2126C is an ultra-low noise, wideband amplifier that runs on
half the supply current of competitive parts. It is intended for use in
systems such as ultrasound imaging where a very small signal needs to
be amplified by a large amount without adding significant noise. Its
low power dissipation enables it to be packaged in the tiny SOT23
package, which further helps systems where many input channels create both space and power dissipation problems.
The EL2126C is stable for gains of 10 and greater and uses traditional
voltage feedback. This allows the use of reactive elements in the feedback loop, a common requirement for many filter topologies. It
operates from ±5V to ±15V supplies and is available in a 5-pin SOT23
package and 8-pin SO and 8-pin PDIP packages.
The EL2126C is fabricated in Elantec’s proprietary complementary
bipolar process, and is specified for operation over the full -40°C to
+85°C temperature range.
Connection Diagrams
1
NC
1
OUT
2
VS-
3
EL2126C
(5-Pin SOT23)
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2001 Elantec Semiconductor, Inc.
5
VS+
-+
4
IN-IN+
2
IN-
3
IN+
4
VS-
(8-Pin SO and 8-Pin PDIP)
-
+
EL2126C
8
NC
7
VS+
6
OUT
5
NC
October 3, 2001
EL2126C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
Absolute Maximum Ratings (T
VS+ to VS- 33V
Continuous Output Current 40mA
Any Input VS+ - 0.3V to VS- + 0.3V
EL2126C - Preliminary
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = T
= 25°C)
A
Power Dissipation See Curves
Operating Temperature -40°C to +85°C
Storage Temperature -60°C to +150°C
A
Electrical Characteristics
VS+ = +5V, VS- = -5V, TA = 25°C, R
Parameter Description Conditions Min Typ Max Unit
DC Performance
V
OS
Input Offset Voltage (SO8 & PDIP8) 0.5 3 mV
Input Offset Voltage (SOT23-5) 3 mV
T
I
I
T
C
A
CVOS
B
OS
CIB
IN
VOL
Offset Voltage Temperature Coefficient TBD µV/°C
Input Bias Current -15 -6 µA
Input Bias Current Offset 0.13 0.8 µA
Input Bias Current Temperature Coefficient TBD nA/°C
Input Capacitance 2.2 pF
Open Loop Gain VO = ±2.5V 75 86 dB
PSRR Power Supply Rejection Ratio
CMRR Common Mode Rejection Ratio
CMIR Common Mode Input Range ±3.5 V
V
+ Positive Output Voltage Swing R
OUT
V
- Negative Output Voltage Swing -3.7 -4 V
OUT
V
I
I
OUTL
OUT
SY
Output Voltage Swing into 100Ω ±3 ±3.4 V
Output Short Circuit Current
Supply Current 4.7 5.5 mA
AC Performance - VCC = -5V, R
BW -3dB Bandwidth, R
BW ±0.1dB ±0.1dB Bandwidth, R
BW ±1dB ±1dB Bandwidth, R
Peaking Peaking, R
SR Slew Rate (±2.5V Square Wave, Measured
OS+ Negative Overshoot, 4Vpk-pk Output Square
OS- Positive Overshoot, 4Vpk-pk Output Square
T
S
V
N
I
N
20%-80%)
Wave
Wave
Settling Time to 0.1% of ±1V Pulse 51 ns
Voltage Noise Spectral Density 1.3 nV/√Hz
Current Noise Spectral Density 1.2 pA/√Hz
HD2 2nd Harmonic Distortion
HD3 3rd Harmonic Distortion
THD Total Harmonic Distortion
IMD Intermodulation Distortion
1. Measured by moving the supplies from ±4V to ±6V
2. Measured with the input moving -4.4V to +3.5V
= 180Ω, RG = 20Ω, RL = 500Ω unless otherwise specified.
F
[1]
[2]
= 1kΩ, RL = ∞ +3.7 +3.8 V
F
[3]
= 20Ω, C
G
= 500Ω 0.6 dB
L
= 3pF
L
= 500Ω 98 MHz
L
= 500Ω 17 MHz
L
= 500Ω 80 MHz
L
70 100 dB
70 85 dB
70 100 mA
TBD 120 V/µs
+2.8 %
-7 %
[4]
[4]
[5]
[6]
TBD dBc
TBD dBc
TBD dBc
TBD %
2
EL2126C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
3. Pulse test only and using a 10Ω load
4. Frequency = 10MHz, V
5. Frequency = 20MHz, V
6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, R
Electrical Characteristics
VS+ = +15V, VS- = -15V, TA = 25°C, R
Parameter Description Conditions Min Typ Max Unit
DC Performance
V
OS
T
CVOS
I
B
I
OS
T
CIB
C
IN
A
VOL
PSRR Power Supply Rejection Ratio
CMRR Common Mode Rejection Ratio
CMIR Common Mode Input Range ±13.5 TBD V
V
OUT
V
+ Positive Output Voltage Swing into 100Ω RF = 1kΩ, RL = ∞ 10.7 11.7 V
OUTL
V
- Negative Output Voltage Swing into 100Ω -9.5 -10.2 V
OUTL
I
OUT
I
SY
AC Performance - VCC = -5V, R
BW -3dB Bandwidth, R
BW ±0.1dB ±0.1dB Bandwidth, R
BW ±1dB ±1dB Bandwidth, R
Peaking Peaking, R
SR Slew Rate (±2.5V Square Wave, Measured
OS+ Positive Overshoot, 4Vpk-pk Output Square
OS- Negative Overshoot, 4Vpk-pk Output Square
T
S
V
N
I
N
HD2 2nd Harmonic Distortion
HD3 3rd Harmonic Distortion
THD Total Harmonic Distortion
IMD Intermodulation Distortion
1. Measured by moving the supplies from ±13.5V to ±16.5V
2. Measured with the input moving -14.4V to +13.8V
3. Pulse test only and using a 10Ω load
4. Frequency = 10MHz, V
5. Frequency = 20MHz, V
Input Offset Voltage (SO8 & PDIP8) -0.5 3 mV
Input Offset Voltage (SOT23-5) 3 mV
Offset Voltage Temperature Coefficient TBD µV/°C
Input Bias Current -15 -5 µA
Input Bias Current Offset 0.16 0.7 µA
Input Bias Current Temperature Coefficient TBD nA/°C
Input Capacitance 2.2 pF
Open Loop Gain 75 88 dB
Output Voltage Swing ±13.5 ±13.7 V
Output Short Circuit Current
Supply Current 5 6 mA
25%-75%)
Wave
Wave
Settling Time to 0.1% of ±1V Pulse 48 ns
Voltage Noise Spectral Density 1.4 nV/√Hz
Current Noise Spectral Density 1.1 pA/√Hz
= 1Vpk-pk, into 100Ω and 5pF load
OUT
= -20dBm (0.0274V
OUT
= 180Ω, RG = 20Ω, RL = 500Ω unless otherwise specified.
F
= 20Ω, C
G
= 500Ω 2.1 dB
L
L
= 500Ω 136 MHz
L
= 500Ω 26 MHz
L
= 500Ω 60 MHz
L
) into 500Ω and 15pF load
RMS
[1]
[2]
[3]
= 3pF
= 500Ω and 15pF
LOAD
65 80 dB
70 85 dB
90 150 mA
TBD 150 V/µS
1.6 %
-4.4 %
[4]
[4]
[5]
[6]
= 1Vpk-pk, into 100Ω and 5pF load
OUT
= -20dBm (0.0274V
OUT
) into 500Ω and 15pF load
RMS
TBD dBc
TBD dBc
TBD dBc
TBD %
EL2126C - Preliminary
3
EL2126C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, R
EL2126C - Preliminary
= 500Ω and 15pF
LOAD
4
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