ELANT EL2125CW, EL2125CS, EL2125CN Datasheet

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

EL2125C - Preliminary

Features

• Voltage noise of only 0.83nV/√Hz

• Current noise of only 2.4pA/√Hz

• Low offset voltage ≤200µV

• 180MHz -3dB BW for AV=10

• Low supply current - 10mA

• SOT23 package available

• ±2.5V to ±15V operation

Applications

• Ultrasound input amplifiers

• Wideband instrumentation

• Communication equipment

• AGC & PLL active filters

• Wideband sensors

Ordering Information

Part No Package Tape & Reel Outline #

EL2125CW 5-Pin SOT23 MDP0038

EL2125CS 8-Pin SO MDP0027

EL2125CN 8-Pin PDIP MDP0031

General Description

The EL2125C is an ultra-low noise, wideband amplifier that runs on
half the supply current of competitive parts. It is intended for use in
systems such as ultrasound imaging where a very small signal needs to
be amplified by a large amount without adding significant noise. Its
low power dissipation enables it to be packaged in the tiny SOT23
package, which further helps systems where many input channels cre­ate both space and power dissipation problems.

The EL2125C is stable for gains of 10 and greater and uses traditional
voltage feedback. This allows the use of reactive elements in the feed­back loop, a common requirement for many filter topologies. It
operates from ±2.5V to ±15V supplies and is available in a 5-pin
SOT23 package and 8-pin SO and 8-pin PDIP packages.

The EL2125C is fabricated in Elantec’s proprietary complementary
bipolar process, and is specified for operation from -45°C to +85°C.

Connection Diagrams

1

NC

1

OUT

2

VS-

3

EL2125CW

(5-Pin SOT23)

Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.

© 2001 Elantec Semiconductor, Inc.

5

VS+

-+

4

IN-IN+

2

IN-

3

IN+

4

VS-

EL2125CS

(8-Pin SO and 8-Pin PDIP)

-

+

8

NC

7

VS+

6

OUT

5

NC

October 2, 2001

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

Absolute Maximum Ratings (T

VS+ to VS- 33V

Continuous Output Current 40mA

Any Input VS- - 0.3V to VS+ + 0.3V

EL2125C - Preliminary

Important Note:

All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = T

= 25°C)

A

Power Dissipation See Curves

Operating Temperature -45°C to +85°C

Storage Temperature -60°C to +150°C

A

Electrical Characteristics

VS = ±5V, TA = 25°C, R

Parameter Description Conditions Min Typ Max Unit

DC Performance

V

OS

T

CVOS

I

B

I

OS

T

CIB

C

IN

A

VOL

PSRR Power Supply Rejection Ratio

CMRR Common Mode Rejection Ratio

CMIR Common Mode Input Range V

V

OUT

V

OUTL

I

OUT

I

S

AC Performance - R

BW -3dB Bandwidth 175 MHz

BW ±0.1dB ±0.1dB Bandwidth 34 MHz

BW ±1dB ±1dB Bandwidth 150 MHz

Peaking Peaking 0.4 dB

SR Slew Rate V

OS Overshoot, 4Vpk-pk Output Square Wave Positive 0.6 %

T

S

V

N

I

N

HD2 2nd Harmonic Distortion

HD3 3rd Harmonic Distortion

THD Total Harmonic Distortion

IMD Intermodulation Distortion

1. Measured by moving the supplies from ±4V to ±6V

2. Measured by moving the inputs from +3.5V to -4.4V

3. Pulse test only

4. Frequency = 10MHz, V

5. Frequency = 20MHz, V

6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, R

= 180Ω, RG = 20Ω, RL = 500Ω unless otherwise specified.

F

Input Offset Voltage (SO8 & PDIP8) -0.2 2 mV

Input Offset Voltage (SOT23-5) 3 mV

Offset Voltage Temperature Coefficient TBD µV/°C

Input Bias Current -30 -21 µA

Input Bias Current Offset 0.2 1 µA

Input Bias Current Temperature Coefficient TBD nA/°C

Input Capacitance 2.2 pF

Open Loop Gain 65 81 dB

Output Voltage Swing No load, R

Output Voltage Swing R

Output Short Circuit Current

[1]

[2]

= 1kΩ 3.5 3.8 V

F

= 100Ω 2.8 3.1 V

[3]

L

75 96 dB

65 100 dB

80 100 mA

Supply Current 10.1 12 mA

= 20Ω, C

G

= 5pF

L

= 2VPP, measured at 20% to 80% TBD 190 V/µs

OUT

Negative 2.7 %

Settling Time to 0.1% of ±1V Pulse TBD ns
Voltage Noise Spectral Density 0.83 nV/√Hz
Current Noise Spectral Density 2.4 pA/√Hz

OUT

OUT

[4]

[4]

[5]

[6]

= 1Vpk-pk, into 100Ω and 5pF load

= -20dBm (0.0274V

) into 500Ω and 15pF load

RMS

= 500Ω and 15pF

LOAD

TBD dBc

TBD dBc

TBD dBc

TBD %

2

EL2125C - Preliminary

Ultra-low Noise, Low Power, Wideband Amplifier

Electrical Characteristics

VS = ±15V, TA = 25°C, R

Parameter Description Conditions Min Typ Max Unit

DC Performance

V

OS

T

CVOS

I

B

I

OS

T

CIB

C

IN

A

VOL

PSRR Power Supply Rejection Ratio

CMRR Common Mode Rejection Ratio

CMIR Common Mode Input Range TBD V

V

OUT

V

OUTL

I

OUT

I

S

AC Performance - R

BW -3dB Bandwidth 220 MHz

BW ±0.1dB ±0.1dB Bandwidth 23 MHz

BW ±1dB ±1dB Bandwidth 63 MHz

Peaking Peaking 2.5 dB

SR Slew Rate V

OS Overshoot, 4Vpk-pk Output Square Wave 0.6 %

T

S

V

N

I

N

HD2 2nd Harmonic Distortion

HD3 3rd Harmonic Distortion

THD Total Harmonic Distortion

IMD Intermodulation Distortion

1. Measured by moving the supplies from ±13.5V to ±16.5V

2. Measured by moving the inputs from +13.5V to -14.4V

3. Pulse test only

4. Frequency = 10MHz, V

5. Frequency = 20MHz, V

6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, R

= 180Ω, RG = 20Ω, RL = 500Ω unless otherwise specified.

F

Input Offset Voltage (SO8 & PDIP8) -0.2 2 mV

Input Offset Voltage (SOT23-5) 3 mV

Offset Voltage Temperature Coefficient TBD µV/°C

Input Bias Current -30 -21 µA

Input Bias Current Offset 0.16 1 µA

Input Bias Current Temperature Coefficient TBD nA/°C

Input Capacitance 2.2 pF

Open Loop Gain 75 86 dB

Output Voltage Swing No load, R

Output Voltage Swing Positive, R

Output Short Circuit Current

[1]

[2]

= 1kΩ 13.5 V

F

= 180Ω, RL = 500Ω 12.1 V

F

[3]

Negative -11.3 V

75 95 dB

75 100 dB

100 150 mA

Supply Current 10.8 12 mA

= 20Ω, C

G

= 5pF

L

= 2VPP, measured at 20% to 80% TBD 225 V/µs

OUT

Settling Time to 0.1% of ±1V Pulse TBD ns
Voltage Noise Spectral Density 0.95 nV/√Hz
Current Noise Spectral Density 2.1 pA/√Hz

OUT

OUT

[4]

[4]

[5]

[6]

= 1Vpk-pk, into 100Ω and 5pF load

= -20dBm (0.0274V

) into 500Ω and 15pF load

RMS

= 500Ω and 15pF

LOAD

TBD dBc

TBD dBc

TBD dBc

TBD %

EL2125C - Preliminary

3