ELANT EL2009CT Datasheet

EL2009C

90 MHz 1 Amp Buffer Amplifier

EL2009C December 1995 Rev C

Features

# High slew rateÐ3000 V/ ms
# Wide bandwidthÐ

@

125 MHz
90 MHz

e

R

50X

L

@

e

R

10X

L

# Output currentÐ1A continuous
# Output impedanceÐ1X
# Short circuit protected
# Power package with isolated

metal tab

Applications

# Video distribution amplifier
# Fast op amp booster
# Flash converter driver
# Motor driver
# Pulse transformer driver
# A.T.E. pin driver

Ordering Information

Part No. Temp. Range Package Outline

EL2009CT 0§Ctoa75§C TO-220 MDP0028

Connection Diagram

5-Pin TO-220

General Description

The EL2009 is a patented high speed bipolar monolithic buffer
amplifier designed to provide currents over 1 amp at high fre­quencies, while drawing 40 mA of quiescent supply current. The
EL2009’s 3000 V/ms slew rate and 90 MHz bandwidth driving a
10X load insures stability in fast op amp feedback loops. Elan­tec has applied for patents on unique circuitry within the
EL2009.

Used as an open loop buffer, the EL2009’s low output imped­ance (1X) gives a gain of 0.99 when driving a 100X load and 0.9
driving a 10X load.

The EL2009 has an output short circuit current limit which will
protect the device under both a DC fault condition and AC op­eration with reactive loads.

The EL2009 is constructed using Elantec’s proprietary Comple­mentary Bipolar process that produces PNP and NPN transis­tors with essentially identical AC and DC characteristics. In the
EL2009, the Complementary Bipolar process also insulates the
package’s metal heat sink tab from all supply voltages. There­fore, the tab may be mounted to an external heat sink or the
chassis without an insulator.

Ý

The EL2009CT is specified for operation over the 0
temperature range and is provided in a 5-lead TO-220 plastic
power package.

Simplified Schematic

Ctoa75§C

§

Top View

Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these

specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.

©

1989 Elantec, Inc.

2009– 1

2009– 2

Manufactured under U.S. Patent No. 4,833,424 and 4,827,223 and U.K. Patent No.

2217134.

EL2009C

90 MHz 1 Amp Buffer Amplifier

Absolute Maximum Ratings

V

S

V

IN

I

IN

P

D

Important Note:
All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually
performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test
equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore T

Test Level Test Procedure

Supply Voltage (VabVb)
Input Voltage (Note 1)
Input Current (Note 1)
Power Dissipation (Note 2) See Curves

I 100% production tested and QA sample tested per QA test plan QCX0002.

II 100% production tested at T

III QA sample tested per QA test plan QCX0002.
IV Parameter is guaranteed (but not tested) by Design and Characterization Data.

V Parameter is typical value at T

T

MAX

and T

MIN

A

per QA test plan QCX0002.

Electrical Characteristics

Parameter Description

V

OS

I

IN

R

IN

A

V1

A

V2

A

V3

V

O1

V

O2

R

O1

R

O2

I

O

I

S

Output Offset Voltage 0

Input Current 0

Input Impedance

Voltage Gain

Voltage Gain

Voltage Gain,

e

g

5V

V

S

Output Voltage Swing

Output Voltage Swing

Output Impedance

Output Impedance

Output Current

Supply Current 0

PSRR Supply Rejection

(Note 4)

V

IN

g

12V 100X 25§C 250 900 I kX

g

10V

g

10V 10X 25§C 0.88 0.90 I V/V

g

3V 10X 25§C 0.87 0.89 I V/V

g

14V 100X 25§C

g

12V 10X 25§C

g

10Vg10 mA 25§C 1.5 I X

g

10V

g

12V (Note 3) 25§C 1.4 1.8 I A

0

e

(T

25§C)

A

g

18V or 36V

g

15V or V

S

g

50 mA

e

25§C and QA sample tested at T

e

25§C for information purposes only.

A

e

g

V

S

15V, R

e

50X, unless otherwise specified

S

Operating Temperature Range 0§Ctoa75§C

T

A

T

Operating Junction Temp. 175§C

J

T

Storage Temp. Range

ST

T

Lead Solder Temp.k10 seconds 300§C

LD

e

25§C,

A

Test Conditions Limits

Load Temp Min Typ Max

%

%

%

g

1A 25§C 0.9 1.0 I X

%

%

25§C

T

MIN,TMAX

25§C

T

MIN,TMAX

25§C 0.985 0.999 I V/V

T

MIN,TMAX

25§C304565ImA

25

C60 IdB

§

b

60 60 I mV

b

80 80 IV mV

b

125

b

200 200 IV mA

g

13 I V

g

10.5

1IVA

b

65§Ctoa150§C

e

e

T

TA.

J

C

Test

Level

b

5 125 I mA

g

11 I V

Units

TDis 3.6in

2

EL2009C

90 MHz 1 Amp Buffer Amplifier

e

Electrical Characteristics

Parameter Description

a

b

V

,V

S

SR

1

SR

2

tr,t

f

BW

C

IN

THD Total Harmonic Distortion 25§C1I%

Note 1: If the input exceeds the ratings shown (or the supplies) or if the input voltage exceedsg7.5V then the input current must be

limited to

Note 2: The maximum power dissipation depends on package type, ambient temperature and heat sinking. See the characteristic

curves for more details.

Note 3: Force the input to

the output.
Note 4: V
Note 5: V

a

Note 6: Slew Rate is measured between V
Note 7: Slew Rate is measured between V

Voltage Gain and
Phase vs Frequency

Supply Sensitivity

S

(Note 5)

Slew Rate
(Note 6) 10X 2500

Slew Rate
(Note 7)

Rise/Fall Time 100 mV 10X 25§C7 Vns

b

3 dB Bandwidth 100 mV 10X 25§C 90 V MHz

Input Capacitance 25§C25 VpF

g

50 mA.

a

12V and the output toa10V and measure the output current. Repeat withb12V input andb10V on

e

g

4.5V then VSis changed tog18V.

S

aea

S

18V.

15V, V

be

S

4.5V then V

OUT

OUT

g

V

S

V

IN

g

10V 50X 25§C 3000

g

5V 10X 25§C 1250 V V/ms

b

is changed tob18V and V

S

ea

5V andb5V.

ea

2.5V andb2.5V.

e

15V, R

Test Conditions Limits

Active operating area Active operating area

50X, unless otherwise specified Ð Contd.

S

Load Temp Min Typ Max

%

C 2 I mV/V

25

§

beb

S

15V, V

aea

S

4.5V then V

Test

Level

VV/ms

a

is changed to

S

Units

TDis 2.1in

2009– 4

Applications Information

The EL2009 is a higher bandwidth of the
EL2008. It is recommended that you read the
EL2008 application section.

Video Distribution Amplifier

The EL2009 can drive 15 double matched 75X
cables. If the EL2009 is used within an op amp
feedback loop the output levels are independent
of loading. The circuit below accepts 1 of 2 inputs

2009– 5

and drives 15 cables. Pin 8 of the EL2020 (Dis­able) is used to multiplex between the inputs and
can be easily expanded to accept more inputs.
The circuit as shown when fully loaded has dif­ferential phase

k

0.1%. The 100X resistor at the EL2009 input

k

0.1§and differential gain

(R1) is necessary to stabilize the loop. The
EL2009 operates with a CLASS AB output which
exhibits a slight rise in output impedance when-

3

2009– 6