ELANT EL2008CT Datasheet
EL2008C
55 MHz 1 Amp Buffer Amplifier
EL2008C
Features
• High slew rate 2500 V/µs
• Wide bandwidth 100MHz @ RL =
50Ω and 55MHz @ RL = 10Ω
• Output current 1A continuous
• Output impedance 1Ω
• Quiescent current 13mA
• Short circuit protected
• Power package with isolated metal
tab
Applications
• Video distribution amplifier
• Fast op amp booster
• Flash converter driver
• Motor driver
• Pulse transformer driver
• A.T.E. pin driver
Ordering Information
Part No. Temp. Range Package Outline#
EL2008CT 0°C to +75°C TO-220 MDP0028
Connection Diagrams
General Description
The EL2008C is a patented high speed bipolar monolithic buffer
amplifier designed to provide currents over 1 amp at high frequencies,
while drawing only 13 mA of quiescent supply current. The
EL2008C's 1500 V/µs slew rate and 55 MHz bandwidth driving a 10Ω
load is second only to the EL2009 and insures stability in fast op amp
feedback loops. Elantec has applied for patents on unique circuitry
within the EL2008C.
Used as an open loop buffer, the EL2008C's low output impedance
(1Ω) gives a gain of 0.99 when driving a 100Ω load and 0.9 driving a
10Ω load. The EL2008C has output short circuit current limiting
which will protect the device under both a DC fault condition and AC
operation with reactive loads.
The EL2008C is constructed using Elantec's proprietary Complementary Bipolar process that produces PNP and NPN transistors with
essentially identical AC and DC characteristics. In the EL2008C, the
Complementary Bipolar process also insulates the package's metal
heat sink tab from all supply voltages. Therefore the tab may be
mounted to an external heat sink or the chassis without an insulator.
The EL2008CT is specified for operation over the 0°C to +75°C temperature range and is provided in a 5-lead TO-220 plastic power
package.
Simplified Schematic
5-Pin TO-220
Top View
Manufactured under U.S. Patent No. 4,833,424 and 4,827,223 and U.K. Patent No. 2217134.
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2001 Elantec Semiconductor, Inc.
December 23, 1999
EL2008C
55 MHz 1 Amp Buffer Amplifier
EL2008C
Absolute Maximum Ratings (T
V
S
V
IN
If the input exceeds the ratings shown (or the supplies) or if the input voltage exceeds ±7.5V
then the input current must be limited to ±50 mA. See the application hints for information.
I
IN
P
D
Supply Voltage (V+ - V-) ±18V or 36V
Input Voltage ±15 or V
Input Current (See note above) ±50 mA
Power Dissipation See Curves
= 25°C)
A
The maximum power dissipation depends on package type, ambient temperature and heat
sinking. See the characteristic curves for more details.
S
T
A
T
J
T
ST
T
LD
Operating Temperature Range 0°C to +75°C
Operating Junction Temp 175°C
Storage Temp Range -65°C to +150°C
Lead Solder Temp <10 seconds 300°C
Important Note:
All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually performed during
production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test equipment, specifically the LTX77
Series system. Unless otherwise noted, all tests are pulsed tests, therefor TJ = TC = TA.
Test Level Test Procedure
I 100% production tested and QA sample tested per QA test plan QCX0002.
II 100% production tested at TA = 25°C and QA sample tested at TA = 25°C, T
MAX
and T
per QA test plan QCX0002.
MIN
III QA sample tested per QA test plan QCX0002.
IV Parameter is guaranteed (but not tested) by Design and Characterization Data.
V Parameter is typical value at TA = 25°C for information purposes only.
Electrical Characteristics
VS = ±15V, R
Parameter Description
V
OS
I
IN
R
IN
A
V1
A
V2
A
V3
V
01
V
02
R
01
R
02
I
O
I
S
PSRR Supply Rejection
VS+, VS- Supply Sensitivity
SR
SR
tr, t
= 50Ω, unless otherwise specified
S
Output Offset Voltage 0 × 25°C -40 10 +40 I mV
Input Current 0 × 25°C -35 -5 +35 I µA
Input Impedance ±12V 100Ω 25°C 0.5 2 I MΩ
Voltage Gain
Voltage Gain
Voltage Gain, VS = ±15V
Output Voltage Swing ±14V 100Ω 25°C ±13 I V
Output Voltage Swing ±12V 10Ω 25°C ±10.5 ±11 I V
Output Impedance ±10V ±10 mA 25°C 1.8 2.5 I Ω
Output Impedance ±10V ±1A 25°C 0.8 1.15 I Ω
Output Current ±12V
Supply Current 0 × 25°C 12 17 26 I mA
1
2
f
Slew Rate
Slew Rate
Rise/Fall Time 100 mV 10Ω 25°C 7 V ns
Test Conditions Limits
IN
±10V
±10V
±3V
[2]
[3]
[4]
[5]
0 × 25°C 60 I dB
±10V
±10V
±5V 10Ω 25°C 800 V V/µs
Load Temp Min Typ Max
T
,
-50 +50 IV mV
,
-50 +50 IV µA
0.985
0.88
0.87
,
1 IV A
0.9995
0.91
0.89
10Ω
10Ω
[1]
MIN
T
MAX
T
MIN
T
MAX
×
25°C
25°C
25°C
25°C 1.25 1.8 I A
T
MIN
T
MAX
× 25°C 2 I mV/V
50Ω
10Ω
25°C
25°C
2500
1500
Test Level UnitsV
I
I
I
V
V
V/V
V/V
V/V
V/µs
V/µs
2
EL2008C
55 MHz 1 Amp Buffer Amplifier
Electrical Characteristics
VS = ±15V, R
Parameter Description
BW -3 dB Bandwidth 100 mV 10Ω 25°C 55 V MHz
C
IN
THD 25°C 1 I %
1. Force the input to +12V and the output to +10V and measure the output current. Repeat with -12V and -10V on the output.
2. VS = ±4.5V then VS is changed to ±18V.
3. VS+ = +15V, VS- = -4.5V then VS - is changed to -18V and VS- = -15V, VS+ = +4.5V then VS+ is changed to +18V.
4. Slew Rate is measured between V
5. 7:Slew Rate is measured between V
= 50Ω, unless otherwise specified
S
Test Conditions Limits
IN
Input Capacitance 25°C 25 V pF
= +5V and -5V.
OUT
= +2.5V and -2.5V.
OUT
Load Temp Min Typ Max
Test Level UnitsV
EL2008C
3
EL2008C
55 MHz 1 Amp Buffer Amplifier
EL2008C
Typical Performance Curves
Slew Rate
vs Capacitance Load
Output Impedance
vs Frequency
Slew Rate
vs Supply Voltage
Output Resistance
vs Supply Voltage
Rise Time
vs Temperature
Small Signal Output
Resistance
vs DC Output Current
-3 dB Bandwidth
vs Supply Voltage
Quiescent Supply Current
vs Supply Voltage
4
Input Current
vs Input Voltage
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