ELANT EL2005G, EL2005CG, EL2005G-883B Datasheet

EL2005/EL2005C January 1990 Rev F

EL2005/EL2005C

High Accuracy Fast Buffer

Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. Patent pending.

CMSÝ2005DS

©

1989 Elantec, Inc.

Features

# Low input currentÐ50 pA
# Low offset and driftÐ

2 mV/25 mV/

§

C

# High slew rateÐ1500 V/ms
# Fast rise and fall timeÐ2.5 ns
# High input resistanceÐ1000 GX
# BandwidthÐ140 MHz
# Pin compatible with ELH0033
# MIL-STD-883 Revision C devices

manufactured in U.S.A.

Advantages

# No input loading
# Input current independent of

input voltage

# Eliminates offset adjustments
# Drives cables directly

Ordering Information

Part No. Temp. Range Package Outline

Ý

EL2005CGb25§Ctoa85§C TO-8 MDP0002

EL2005G

b

55§Ctoa125§C TO-8 MDP0002

EL2005G/883Bb55§Ctoa125§C TO-8 MDP0002

Connection Diagram

2005– 1

Top View

Note: Case is electrically isolated.

General Description

The EL2005 is a high-speed, FET input buffer similar to
ELH0033 and EL2004 but with input specifications significant­ly improved over the previous types. The input stage employs a
cascode configuration to maintain constant input characteris­tics over the full

g

10V input range. The input looks likea3pF
capacitor to ground in almost all cases since the DC bias current
is constant with input voltage. In sample and hold circuits this
results in an order of magnitude improvement in hold charac­teristics. Input offset voltage and offset voltage drift are also
improved a factor of two over previous types.

These excellent DC characteristics are complemented by a wide
140 MHz bandwidth while the 1500 V/ms slew rate and excel­lent phase linearity of the ELH0033 family are preserved allow­ing direct plug-in replacement for upgraded performance. (For
even faster operation see EL2004.)

Elantec facilities comply with MIL-I-45208A and are MIL­STD-1772 certified. Elantec’s Military devices comply with
MIL-STD-883B Revision C and are manufactured in our rigidly
controlled, ultra-clean facilities in Milpitas, California. For ad­ditional information on Elantec’s Quality and Reliability Assur­ance Policy and procedures request brochure QRA-1.

Simplified Schematic

2005– 2

EL2005/EL2005C

High Accuracy Fast Buffer

Absolute Maximum Ratings

(T

A

e

25§C)

V

S

Supply Voltage (VabVb) 40V

V

IN

Input Voltage 40V

P

D

Power Dissipation (See curves) 1.5W

I

OC

Continuous Output Current

g

100 mA

I

OP

Peak Output Current

g

250 mA

T

A

Operating Temperature Range

EL2005

b

55§Ctoa125§C

EL2005C

b

25§Ctoa85§C

T

J

Operating Junction Temperature 175§C

T

ST

Storage Temperature

b

65§Ctoa150§C

Lead Temperature

(Soldering, 10 seconds) 300

§

C

Important Note:
All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually
performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test
equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore T

J

e

T

C

e

TA.

Test Level Test Procedure

I 100% production tested and QA sample tested per QA test plan QCX0002.

II 100% production tested at T

A

e

25§C and QA sample tested at T

A

e

25§C,

T

MAX

and T

MIN

per QA test plan QCX0002.

III QA sample tested per QA test plan QCX0002.
IV Parameter is guaranteed (but not tested) by Design and Characterization Data.

V Parameter is typical value at T

A

e

25§C for information purposes only.

DC Electrical Characteristics

V

S

e

g

15V, V

IN

e

0V, T

MIN

s

T

A

s

T

MAX

Parameter Description Test Conditions

EL2005 EL2005C

Units

Min Typ Max

Test

Min Typ Max

Test

Level Level

V

OS

Output Offset R

S

s

100 kX,T

J

e

25§C

2 5 I 3 10 I mV

Voltage (Note 1)

R

S

s

100 kX 10 I 15 III mV

DVOS/DT Average Temperature

Coefficient of R

S

e

100X 25 V 25 V mV/§C

Offset Voltage

PSRR Supply Rejection

g

10VsV

S

s

g

20V 65 75 I 60 75 II dB

I

B

Input Bias Current T

J

e

25§C (Notes 1 and 3) 2 50 I 5 100 I pA

T

A

e

25§C (Notes 2 and 3) 50 500 IV 100 1000 IV pA

T

J

e

T

A

e

T

MAX

2 5 I 0.5 5 III nA

A

V

Voltage Gain R

S

e

100X,R

L

e

1kX,

0.97 0.98 1.0 I 0.96 0.98 1.0 II V/V

V

IN

e

g

10V

R

S

e

100X,R

L

e

100X,

0.88 0.95 0.98 I 0.88 0.95 0.99 II V/V

v

IN

e

g

10V

R

IN

Input Impedance R

L

e

1kX,

2

c

10910

12

I2c10910

12

IV X

b

10VsV

IN

s

g

10V

T

J

e

25§C (Note 1),

10

101012

I101010

12

I X

R

L

e

1kX

R

O

Output R

L

e

1kX,

48 I 49 II X

Impedance V

IN

e

g

1V

2

TDis 3.8in

EL2005/EL2005C

High Accuracy Fast Buffer

DC Electrical Characteristics

V

S

e

g

15V, V

IN

e

0V, T

MIN

s

T

A

s

T

MAX

Ð Contd.

Parameter Description Test Conditions

EL2005 EL2005C

Units

Min Typ Max

Test

Min Typ Max

Test

Level Level

V

O

Output Voltage V

IN

e

g

14V,

g

12.5 V

g

12.5 V V

Swing R

L

e

1kX

V

IN

e

g

10.5V, R

L

e

100X,

g9g

9.8 I

g9g

9.8 I V

T

A

e

25§C

I

S

Supply Current V

IN

e

0 (Note 1) 19 22 I 19 24 II mA

PD Power V

IN

e

0

570 660 I 570 720 II mW

Consumption

AC Electrical Characteristics

T

C

e

25§C, V

S

e

g

15V, R

S

e

50X,R

L

e

1kX

Parameter Description Test Conditions

EL2005 EL2005C

Units

Min Typ Max

Test

Min Typ Max

Test

Level Level

SR Slew Rate V

IN

e

g

10V, V

OUT

e

g

5V 1000 1500 III 1000 1500 III V/ms

BW Bandwidth V

IN

e

1V

rms

140 V 140 V MHz

w

NL

Phase BWe1 MHz to 20 MHz

2 V 2 V Degree

Non-Linearity

t

r

Rise Time DV

IN

e

0.5V 2.5 V 2.5 V ns

t

P

Propagation Delay DV

IN

e

0.5V 1.0 V 1.0 V ns

HD Harmonic fl1 kHz

k

0.1 V

k

0.1 V %

Distortion

A

V

Voltage Gain R

S

e

100X,V

IN

e

1V

rms

,

0.97 0.99 1.0 I 0.96 0.99 1.0 II V/V

f

e

1 kHz

R

O

Output Impedance V

IN

e

1V

rms

,

48 I 49 II X

f

e

1 kHz

Note 1: Specification is at 25§C junction temperature due to requirements of high-speed automatic testing. Actual values at operating

temperatures will exceed the value at T

J

e

25§C. When supply voltages areg15V, no-load operating junction temperatures

may rise 40

§

Cto60§C above ambient and more under load conditions. Accordingly, VOSmay change one to several mV, and

I

B

will change significantly during warm-up. Refer to IBvs Temperature graph for expected values.
Note 2: Measured in still air seven minutes after application of power.
Note 3: Input bias current is guaranteed over the input range of

b

10VsV

IN

s

a

10V.

3

TDis 1.7inTDis 2.5in

EL2005/EL2005C

High Accuracy Fast Buffer

Typical Performance Curves

Dissipation

Maximum Power

Gain vs Input Voltage

Output Resistance vs
Output Current

Frequency Response Supply Voltage

Supply Current vs

Offset Voltage vs
Supply Voltage

2005– 3

Input Voltage

Input Bias Current vs

Temperature

Input Bias Current vs

During Warm-up

Input Bias Current

Temperature

Rise Time vs

Small Signal Pulse
Response

Large Signal Pulse
Response

2005– 4

4