ELANT EL2002CM, EL2002ACN Datasheet
EL2002C
Low Power, 180 MHz Buffer Amplifier
EL2002C December 1995 Rev D
Features
# 180 MHz bandwidth
# 2000 V/ms slew rate
# Low bias current, 3 mA typical
# 100 mA output current
# 5 mA supply current
# Short circuit protected
# Low cost
# Stable with capacitive loads
# Wide supply range
g
5V tog15V
# No thermal runaway
Applications
# Op amp output current booster
# Cable/line driver
# A/D input buffer
# Isolation buffer
Ordering Information
Part No. Temp. Range Package Outline
EL2002ACN 0§Ctoa75§C P-DIP MDP0031
EL2002CM 0§Ctoa75§C 20-Lead SOL MDP0027
EL2002CN 0§Ctoa75§C P-DIP MDP0031
General Description
The EL2002 is a low cost monolithic, high slew rate, buffer
amplifier. Built using the Elantec monolithic Complementary
Bipolar process, this patented buffer has a
b
3 dB bandwidth of
180 MHz, and delivers 100 mA, yet draws only 5 mA of supply
current. It typically operates from
will work with as little as
g
5V.
g
15V power supplies but
This high speed buffer may be used in a wide variety of applications in military, video and medical systems. Typical examples
include fast op-amp output current boosters, coaxial cable drivers and A/D converter input buffers.
Elantec’s products and facilities comply with MIL-I-45208A,
and other applicable quality specifications. For information on
Elantec’s processing, see the Elantec document, QRA-1: Elan-
tec’s Processing, Monolithic Integrated Circuits.
Connection Diagrams
EL2002 DIP Pinout
Ý
2002– 1
Top View
EL2002 SOL Pinout
Top View
Manufactured Under U.S. Patent No. 4,833,424 and U.K. Patent No. 2217134.
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
©
1989 Elantec, Inc.
2002– 2
EL2002C
Low Power, 180 MHz Buffer Amplifier
Absolute Maximum Ratings
T
Operating Temperature Range:
a
V
S
V
IN
I
IN
P
D
Supply Voltage (V
Input Voltage (Note 1)
Input Current (Note 1)
Power Dissipation (Note 2) See Curves
Output Short Circuit
b
Vb)
g
18V or 36V
g
15V or V
g
50 mA
Duration (Note 3) Continuous
Important Note:
All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually
performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test
equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore T
Test Level Test Procedure
I 100% production tested and QA sample tested per QA test plan QCX0002.
II 100% production tested at T
III QA sample tested per QA test plan QCX0002.
IV Parameter is guaranteed (but not tested) by Design and Characterization Data.
V Parameter is typical value at T
T
MAX
and T
per QA test plan QCX0002.
MIN
Electrical Characteristics
e
25§C and QA sample tested at T
A
e
25§C for information purposes only.
A
e
g
V
15V, R
S
Test Conditions Limits
Parameter Description
V
Load Temp Min Typ Max
IN
V
OS
Offset Voltage 0
EL2002A/EL2002AC
EL2002/EL2002C 0
I
IN
Input Current 0
EL2002A/EL2002AC
EL2002/EL2002C 0
R
IN
A
V1
A
V2
Input Resistance
Voltage Gain
Voltage Gain
a
12V 100X 25§C13 IMX
g
12V
g
10V 100X 25§C 0.85 0.93 I V/V
%
%
%
%
%
A
S
T
T
e
50X, unless otherwise specified
S
EL2002AC/EL2002C 0
Operating Junction Temperature 150§C
J
Storage Temperature
ST
e
A
25§C,
b
e
T
J
EL2002AC
EL2002C
Test
Level
25§C
T
MIN,TMAX
25§C
T
MIN,TMAX
25§C
T
MIN,TMAX
25§C
T
MIN,TMAX
T
MIN,TMAX
b
15 5
b
20
b
40 10
b
50
b
10 3
b
15
b
15 5
b
20
0.1 III MX
a
15 I mV
a
20 III mV
a
40 I mV
a
50 III mV
a
10 I mA
a
15 III mA
a
15 I mA
a
20 III mA
25§C 0.990 0.998 I V/V
T
MIN,TMAX
T
MIN,TMAX
0.985 III V/V
0.83 III V/V
Ctoa75§C
§
65§Ctoa150§C
e
TA.
C
Units
TDis 3.3in
2
EL2002C
Low Power, 180 MHz Buffer Amplifier
e
Electrical Characteristics
g
V
S
Test Conditions Limits
Parameter Description
A
V
R
I
I
V3
O
OUT
OUT
S
V
Voltage Gain
e
with V
S
g
5V
g
Output Voltage Swingg12V 100X 25§C
Output Resistance
Output Current
g
g
Supply Current 0
Load Temp Min Typ Max
IN
3V 100X 25§C 0.83 0.91 I V/V
2V 100X 25§C 8 13 I X
12V (Note 4) 25§C
PSRR Supply Rejection, 0
(Note 5)
t
r
t
d
SR Slew Rate, (Note 6)
Note 1: If the input exceeds the ratings shown (or the supplies) or if the input to output voltage exceedsg7.5V then the input
Note 2: The maximum power dissipation depends on package type, ambient temperature and heat sinking. See the characteristic
Rise Time 0.5V 100X 25§C 2.8 V ns
Propagation Delay 0.5V 100X 25§C 1.5 V ns
g
10V 100X 25§C 1200 2000 IV V/ms
g
current must be limited to
50 mA. See the applications section for more information.
curves for more details.
15V, R
%
%
e
50X, unless otherwise specified Ð Contd.
S
EL2002AC
EL2002C
Test
Level
T
MIN,TMAX
T
MIN,TMAX
T
MIN,TMAX
T
MIN,TMAX
0.80 III V/V
g
g
10
11 I V
g
9.5 III V
15 III X
a
100a160 I mA
g
95 III mA
25§C 5 7.5 II mA
T
MIN,TMAX
10 III mA
25§C6075 I dB
T
MIN,TMAX
50 III dB
Units
Note 3: A heat sink is required to keep the junction temperature below the absolute maximum when the output is short circuited.
a
Note 4: Force the input to
output.
Note 5: V
is measured at V
OS
simultaneously.
Note 6: Slew rate is measured between V
12V and the output toa10V and measure the output current. Repeat withb12 VINandb10V on the
aea
S
OUT
4.5V, V
ea
beb
S
5V andb5V.
4.5V and V
aea
S
18V, V
be
18V. Both supplies are changed
S
TDis 3.5in
3
EL2002C
Low Power, 180 MHz Buffer Amplifier
Typical Performance Curves
Offset Voltage
vs Temperature
Supply Current
vs Supply Voltage
Voltage Gain
vs Temperature
Voltage Gain
vs Input Voltage
Output Voltage Swing
vs Temperature
Voltage Gain
vs Source Resistance
Input Bias Current
vs Input Voltage
at Various Temperatures
Input Bias Current
vs Input Voltage
4
g
Slew Rate vs
Supply Voltage
2002– 4
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