ELANT EL1056CM, EL1056ACM Datasheet

EL1056AC/EL1056C

Monolithic High-Speed Pin Driver

EL1056AC/EL1056C March 1993 Rev A

Features

# Wideg12V output levels # 250 ps dispersion # 3 ns delay times # 1V/ns slew rateÐadjustable # Low overshoot and aberrations in

50X systems

# 3-state output # Power-down mode reduces

output leakage to nanoamperes

# Overcurrent sense flag available

to protect internal output devices

# Buffered analog inputs # Differential logic inputs are

compatible with ECL, TTL, and CMOS

Applications

# Memory testers # ASIC testers # Functional board testers # Analog/digital incoming

component verifiers

# Logic emulators

Ordering Information

Part No. Temp. Range Package Outline

EL1056CM 0§Ctoa75§C 24-Lead MDP0027

EL1056ACM 0§Ctoa75§C 24-Lead MDP0027

Thermal SOL

General Description

The EL1056 is designed to drive high-quality test signals into close or terminated loads. It has a dispersion of 250 ps or less Ð whether due to signal size or direction of edge. It can output a very wide 24V output span, encompassing all logic families as well as analog levels. The EL1056 is fabricated in Elantec’s oxide isolated process, which eliminates the possibility of latch-up and provides a very durable circuit.

The output can be turned off in two ways; the OE pins allow the output to be put in a high-impedance state which makes the output look like a large resistance in parallel with 3 pF, even for back-driven signals with as much as 2.5V/ms slew rate. The E pins put the output in an even higher impedance state, guaranteed to 150 nA leakage in the EL1056A. This allows accurate measurements on the bus without disconnecting the EL1056 with a relay.

The EL1056 incorporates an output current sense which can warn the system controller that excessive output current is flowing. The trip point is set by two external resistors.

Connection Diagram

24-Lead Thermal SOL Package

Ý

*and Heat-spreader

Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.

©

1993 Elantec, Inc.

Top View

1056– 1

EL1056AC/EL1056C

Monolithic High-Speed Pin Driver

Absolute Maximum Ratings

V

S

b

V

a

B

b

B I

SR

V

SR

Shunt Shunt Data, Data

OE, OE

Important Note: All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore T

Test Level Test Procedure

Voltage between Vaand V Supply Voltage Supply Voltage V Supply Voltage Vbto V Input Current 0 mA to 3 mA Input Voltage,

Power-Down Mode

a

Input Voltage (Ba)b5V to B

b

Input Voltage Bbto (Bb)a5V Input Voltages Vbto Vaor

Input Voltages Vbto Vaor

I 100% production tested and QA sample tested per QA test plan QCX0002.

II 100% production tested at T

III QA sample tested per QA test plan QCX0002. IV Parameter is guaranteed (but not tested) by Design and Characterization Data.

V Parameter is typical value at T

T

MAX

and T

ba

g

A

per QA test plan QCX0002.

MIN

e

(T

25§C)

A

33V

b

to V

INH

b

0.3V toa6V

6V Differential

E, E

18V

a

Sense Output Voltage V

INL

V

INH

V

INL

I

OUT

T

J

a

T

A

T

ST

P

D

6V Differential

e

25§C and QA sample tested at T

e

25§C for information purposes only.

A

Input Voltages Vbto Vaor

g

6V Differential

b

to V Input Voltage V Input Voltage Bbto V Output Current

b

0.3V to B

INL

INH

b

60 mA toa60 mA

a

0.3V

Junction Temperature 150§C Operating Ambient Temperature

Range Storage Temperature Power Dissipation (T

(See Curves) 3.1W

e

25§C,

A

e

25§C)

A

b

65§Ctoa150§C

e

T

J

C

0§Ctoa75§C

TA.

a a

DC Electrical Characteristics

e

T

25§C, VaeBae15V, VbeB

A

b

0.8V. I

SR

e

800 mA. V

INH

e

Parameter Description Min Typ Max

I

S

(Va)a(Ba), (Vb)a(Bb) Supply Currents 52 60 I mA

IS, dis (Va)a(Ba), (Vb)a(Bb) Supply Currents, Disabled 17 25 I mA

I

VINH

I

VINL

I

DATA

I

OE

I

E

V

SR

I

SHUNT

V

SHUNT

I

SENSE

V

OS

a

,I

SHUNT

,V

SHUNT

OE Input Current

E Input Current

Voltage at ISRPin 0 20 40 I mV

b

Sense Threshold at Shunts 160 200 250 I mV

b

Sense Output Currents 1 1.5 2 I mA

Output Offset, Data High, V

5V, V

beb

INL

eb

10V, R

1.6V

Data Low, V

SHUNT

INH

INL

e

a

0V, V

R

SHUNT

INL

INH

e

6.5X, no load. Data, E, and OE fromb1.6V to

b

20

320 I mA

b

20 2 20 I mA

b

30b15 30 I mA

b

30b14 30 I mA

b

20 7 20 I mA

47 I mA

eb

e

1.6V

5V

b

50 50 I mV

b

100 100 I mV

Test

Level

Units

TDis 2.7in

2

EL1056AC/EL1056C

Monolithic High-Speed Pin Driver

DC Electrical Characteristics

e

T

25§C, VaeBae15V, VbeB

A

b

0.8V. I

SR

e

800 mA. V

INH

e

Parameter Description Min Typ Max

Eg Gain Error Data High, V

Data Low, V

NL Gain Nonlinearity Data High, V

PSRR Power Supply Rejection Ratio of V

a,Bb

to B

, Shunta, or ShuntbPotential

Ro, en Output Resistance, Enabled, Il

Ro, dis Output Resistance, Output Disabled, V

Io, dis Output Current, Output, Disabled, V

Io, off Output Leakage, E Low, (Shut-Down), V

beb

5V, V

INL

INH

Data Low, V

eb

from 0V to 5V, V

e

Ð Contd.

10V, R

SHUNT

e

R

a

SHUNT

1.6V

eb

5V, V

INH

e

INH

OUT

e

g

20 mA 4.5 6 7.5 I X

O

INL

fromb5V to 0V, No Load

INL

from 0V to 10V, V

5V, V

INL

fromb10V to 0V, No Load 0.06 V %

with Respect

eb

1.6V tob5V, EL1056C 20K 100K

O

e

0V

e

0V, EL1056C

O

EL1056AC

e

6.5X, no load. Data, E, and OE fromb1.6V to

b

1.6V, No Load

eb

1.6V, No Load 0.04 V %

b

1.5b0.6 0 I %

b

1.5b0.6 0 I %

2.2 V mV/V

EL1056AC 100K 200K

b

20 5 20 I mA

b

20 20 I mA

b

150 150 I nA

Test

Level

AC Electrical Characteristics

e

T

25§C, VaeB

A

included at output. Data E, and OE from

b

1.6V, CMOS swing defined by V

Parameter Description Min Typ Max

T

PD

Dis Propagation Delay Dispersion

SR Output Slew Rate, CMOS Swing, 20% –80% 0.8 1 1.2 I V/ns

SR

sym

TR Output Rise Time, ECL Swing, 20% –80% 2.2 V ns

OS Output Overshoot

T

dis

T

en

Co, dis Output Capacitance in Disable 3 V pF

T

off

T

on

Co, off Output Capacitance in Power-Down 50 V pF

T

sense

aea

15V, VbeB

INH

beb

b

1.6V tob0.8V. I

e

5V and V

10V, R

SHUNT

e

0V. Propagation delay is measured at 0.4V movement of output.

INL

e

R

a

SHUNT

e

800 mA. ECL swing is defined by V

SR

b

e

6.5X.R

e

500X.50Xa22 pF snubber

L

INH

eb

0.8V and V

Test

Level

Propagation Delay, CMOS Swing 1.0 3.0 4.5 I ns

Due to Output Edge Direction 250 450 I ps From ECL to CMOS Swings 250 450 I ps Due to Repetition Rate 80 V ps

Slew Rate Symmetry 3 10 I %

CMOS Swing 190 500 I mV ECL Swing (I

e

350 mA) 65 V mV

SR

Output Disable Delay Time 4.7 6.5 I ns

Output Enable Delay Time 6.0 8.5 I ns

Power-Down Delay Time 0.5 V ms

Power-On Delay Time 90 V ns

Comparator Delay Time Ð Switching ON 1.5 V ms

Switching Off 0.4 V ms

Units

I X

e

INL

Units

TDis 2.3inTDis 3.6in

3

EL1056AC/EL1056C

Monolithic High-Speed Pin Driver

Block Diagram

1056– 5

4

Typical Performance Curves

10V, CMOS, TTL, and ECL

Outputs into 550X Load

EL1056AC/EL1056C

Monolithic High-Speed Pin Driver

CMOS and ECL Outputs As Seen

at the End of an Unterminated

Cable, Backmatched at Driver

CMOS Output at I

SR

e

100 mA,

200 mA, 400 mA, and 1000 mA

Propagation Delay vs I

1056– 6

Output Slewrate vs I (Two Samples)

1056– 8

SR

Output Slewrate vs Die Temperature

SR

1056– 7

1056– 9

1056– 10

1056– 11

5