EIC RBV1000, RBV1001, RBV1002, RBV1004, RBV1006 Datasheet

RBV1000 - RBV1010

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low forward voltage drop

* High case dielectric strength of 2000 V

* Ideal for printed circuit board

* Very good heat dissipation

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 7.7 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

For capacitive load, derate current by 20%.

I2t

A2S

Notes :

1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.

UPDATE : NOVEMBER 1,1998

~

~

30 ± 0.3

+

PRV : 50 - 1000 Volts
Io : 10 Amperes

* Low reverse current

SILICON BRIDGE RECTIFIERS

RBV25

3.9 ± 0.2

C3

20 ± 0.3

4.9 ± 0.2

∅

3.2 ± 0.1

11 ± 0.2

DC

0.3

±

13.5

1.0 ± 0.1

±

7.5

0.2

±

7.5

0.2

2.0 ± 0.2

0.7 ± 0.1

10

±

0.2

17.5 ± 0.5

Dimensions in millimeters

°

Single phase, half wave, 60 Hz, resistive or inductive load.

RATING

SYMBOL

RBV
1000

Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C I

F(AV) 10

Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 300 Amps.
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 5.0 Amps. V
Maximum DC Reverse Current Ta = 25 °C I
at Rated DC Blocking Voltage Ta = 100 °C I
Typical Thermal Resistance (Note 1)

F 1.0

R 10 µ

R(H)

RθJC

Operating Junction Temperature Range TJ - 40 to + 150
Storage Temperature Range T

STG - 40 to + 150 °

RBV

1001

RBV

1002

RBV
1004

160

200

2.5

RBV

1006

RBV

1008

RBV
1010

UNIT

Amps.

Volts

A

µ

A

°

C/W

°

C
C

RATING AND CHARACTERISTIC CURVES ( RBV1000 - RBV1010 )

864

2

10

1.0

200

0

0

50

10

0.01

0.1

TJ = 25 °C

10

HEAT-SINK MOUNTING, Tc

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT

12

AMPERES

300

250

TJ = 50 °C

150

AMPERES

100

3.2" x 3.2" x 0.12" THK.

(8.2cm x 8.2cm x 0.3cm)

Al.-FINNED PLATE

PEAK FORWARD SURGE CURRENT,

8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD

AVERAGE FORWARD OUTPUT CURRENT

0 25 50 75 100 125 150 175

CASE TEMPERATURE, ( °C)

2

NUMBER OF CYCLES AT 60Hz

10 20 601

4 6 40 100

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE

100

TJ = 100 °C

Pulse Width = 300 µs

1 % Duty Cycle

1.0

MICROAMPERES

REVERSE CURRENT,

TJ = 25 °C

0.1

FORWARD CURRENT, AMPERES

40 60 120

20

PERCENT OF RATED REVERSE

80

100 1400

VOLTAGE, (%)

0.01

0.4

0.8 1.0 1.6

0.6

1.2 1.4

1.8

FORWARD VOLTAGE, VOLTS