MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
BR5000 - BR5010
PRV : 50 - 1000 Volts
Io : 50 Amperes
* High case dielectric strength
* High surge current capability
* High reliability
* High efficiency
* Low reverse current
* Low forward voltage drop
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.570(14.50)
0.530(13.40)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.728(18.50)
0.658(16.70)
Dimensions in inches and ( millimeters )
SILICON BRIDGE RECTIFIERS
BR50
0.685(16.70)
0.618(15.70)
0.210(5.30)
0.252(6.40)
0.248(6.30)
φ
0.905(23.0)
0.826(21.0)
Metal Heatsink
1.130(28.70)
1.120(28.40)
0.100(2.50)
0.090(2.30)
RATING
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 500 Amps.
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF=25 Amp. VF 1.1 Volts
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range TJ - 40 to + 150
Storage Temperature Range TSTG - 40 to + 150
Notes :
1 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
SYMBOL BR5000 BR5001 BR5002 BR5004 BR5006 BR5008 BR5010
IF(AV) 50 Amps.
I2t
660
IR 10
IR(H) 200
RθJC
1.0
UNIT
A2S
µA
µA
°C/W
°C
°C
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
RATING AND CHARACTERISTIC CURVES (BR5000 - BR5010 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
600
50
5
5
9" x 5" x 4.6" THK.
5
(22.9 x 12.7 x 11.7cm)
Al.-Finned .
5
5
AMPERES
CURRENT AMPERES
AVERAGE FORWARD OUTPUT
100
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
PEAK FORWARD SURGE CURRENT,
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE PER DIODE
100
10
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 50 °C
TJ = 100 °C
FORWARD CURRENT, AMPERES
0.01
FORWARD VOLTAGE, VOLTS
TJ = 25 °C
1.2 1.4 1.80.4 0.6 0.8 1.0 1.6
MICROAMPERES
REVERSE CURRENT,
0.01
TJ = 25 °C
80
100 1400 20 40 60 120
PERCENT OF RATED REVERSE VOLTAGE, (%)