EIC BR1010, BR1008, BR1006, BR1004, BR1002 Datasheet
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BR1000 - BR1010
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
BR10
0.520 (13.20)
0.158 (4.00)
0.142 (3.60)
0.290 (7.36)
0.210 (5.33)
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
0.480 (12.20)
AC
0.77 (19.56)
0.73 (18.54)
AC
0.75 (19.1)
Min.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc=55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 5 Amp.
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I2t
V
F
I
R
I
R(H)
RθJC
T
J
T
STG
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
10
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
UPDATE : APRIL 23, 1998
UNITS
Volts
Volts
Volts
Amp.
Amp.
A2S
Volts
A
µ
A
µ
C/W
°
C
°
C
°
RATING AND CHARACTERISTIC CURVES ( BR1000 - BR1010 )
PER DIODE
4
2
10
50
0.11080
1.0
0.1
02040
60
PEAK FORWARD SURGE CURRENT,
AVERAGE FORWARD OUTPUT CURRENT
REVERSE CURRENT, MICROAMPERES
10
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
12
300
250
8
6
AMPERES
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
(8.2cm x8.2cm x 0.3cm) Al.-PLATE
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
200
150
AMPERES
100
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
NUMBER OF CYCLES AT 60Hz
TJ = 50 °C
10 20 601 2 4 6 40 100
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100
Pulse Width = 300 µs
1 % Duty Cycle
1.0
TJ = 100 °C
FORWARD CURRENT, AMPERES
0.01
0.4
0.6
TJ = 25 °C
0.8 1.0 1.6
1.2 1.4
FORWARD VOLTAGE, VOLTS
TJ = 25 °C
0.01
100 140
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
1.8
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