DYNEX TA32914Q, TA32910Q, TA32912Q Datasheet

TA329..Q

TA329..Q

Asymmetric Thyristor

Advance Information

Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000

APPLICATIONS

■ High Frequency Applications

■ High Power Choppers And Inverters

■ Welding

■ Ultrasonic Generators

■ Induction Heating

■ 400Hz UPS

■ PWM Inverters

FEATURES

■ Low Loss Asymmetrical Diffusion Structure

■ High Interdigitated Amplifying Gate

■ Gate Assisted Turn-off With Exclusive Bypass Diode

■ Fully Characterised For Operation up to 40kHz

■ Directly Compatible With 220-480 A.c. Mains

VOLTAGE RATINGS

Type Number Repetitive Peak

Off-state Voltage

V

DRM

V

TA329 14 Q
TA329 12 Q
TA329 10 Q

1400
1200
1000

Repetitive Peak

Reverse Voltage

V

RRM

V

10
10
10

KEY PARAMETERS

V

DRM

I

T(RMS)

I

TSM

dVdt 1000V/

1400V

370A

2000A

µs

dI/dt 1000A/µs
t

q

7.0µs

Lower voltage grades available.

See Package Details for further information.

CURRENT AND SURGE RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

T(RMS)

I

TSM

I

RMS value

Surge (non-repetitive) on-state current

2

t

2

t for fusing

I

Half sine wave, duty cycle 50%, T
Tj = 125˚C.

= 125oC, tp = 1ms, VR = 0 2000 A

T

j

t

≥ 10ms 20 x 10

p

Outline type code: MU86.

= 80oC,

case

UnitsMax.

370 A

3

A2s

1/10

TA329..Q

THERMAL AND MECHANICAL DATA

Symbol Parameter

R

th(j-c)

th(c-h)

T

T

vj

stg

-

Thermal resistance - junction to case

Thermal resistance - case to heatsinkR

Virtual junction temperature

Storage temperature range

Clamping force

DYNAMIC CHARACTERISTICS

ParameterSymbol Conditions

Conditions Min. Max. Units

Double side cooled

dc

- 0.085

Single side cooled

- 0.204

0.02

-

- 0.04

Clamping force 4.0kN
with mounting compound

Cathode dc
Double side

Single side

On-state (conducting) - 135

Reverse (blocking)

-

125

-40 150

3.6 4.4 kN

Min. Max. Units

o

C/W

o

C/W- 0.153Anode dc

o

C/W

o

C/W

o

C/W

o

o

o

C

C

C

V

I

I

TM

RRM

DRM

Maximum on-state voltage At 600A peak, T

Peak reverse current At V

Off-state current At V

RRM

DRM

dV/dt Maximum linear rate of rise of off-state voltage To 60% V

Rate of rise of on-state currentdI/dt

Gate source 20V, 20Ω
tr ≤ 5µs.

†

t

q

Max. gate assisted turn-off time
(with feedback diode)

Tj = 125oC, I
tp = 25µs (half sine wave),
VR = DF451 Diode voltage drop,
dV/dt = 600V/µs (linear to 60% V
VGK = -5V

t

q

Max. turn-off time
(with feedback diode)

= 125oC, ITM = 100A,

T

j

tp > 100µs, dIR/dt = 30A/µs, VR = 1V,
dV/dt = 600V/µs (linear to 60% V
Gate open.

= 125oC

case

, T

= 125oC

case

, T

= 125oC-1mA

case

= 125oC, Gate open circuit

DRM Tj

Non-repetitive

- 2.5 V

-30mA

- 1000 V/µs

- 1000 A/µs

- 500 A/µsRepetitive

T(PK)

= 200A,

DRM

),

7- µs

10- µs

),

DRM

2/10

GATE TRIGGER CHARACTERISTICS AND RATINGS

TA329..Q

V

V

I

P

GT

I

GT

RGM

FGM

GM

G(AV)

ConditionsParameterSymbol

Gate trigger voltage V

Gate trigger current

= 12V, RL = 3Ω, T

DWM

V

= 12V, RL = 3Ω, T

DWM

Peak reverse gate voltage

Peak forward gate current -

Peak gate power ­Average gate power

= 25oC

case

= 25oC

case

-

-P

Typ.

Max. Units

-4V

- 250 mA

-7V

-10A

-50W

-15W

3/10