DYNEX SV1516M, SV1516K, SV1516FM, SV1516FK, SV1514M Datasheet

SV15..F

1/7

APPLICATIONS

■ Induction Heating

■ A.C. Motor Drives

■ Snubber Diode

■ Welding

■ High Frequency Rectification

■ UPS

FEATURES

■ Thermal Fatigue Free Pressure Contact

■ High Surge Capability

■ Low Recovery Charge

VOLTAGE RATINGS

KEY PARAMETERS

V

RRM

1600V

I

F(AV)

205A

I

FSM

3000A

Q

r

35µC

t

rr

3.2µs

1600
1400
1200
1000

800
600

SV15 16F M or K
SV15 14F M or K
SV15 12F M or K
SV15 10F M or K
SV15 08F M or K
SV15 06F M or K

Conditions

V

RSM

= V

RRM

+ 100V

For 1/2" 20 UNF thread, add suffix K, e.g. SV15 16FK.
For M12 thread, add suffix M, e.g. SV15 16FM.
For stud anode add 'R' to type number, e.g. SV15 16FMR.
For outline DO8C add suffix 'C' to typ number,
e.g. SV15 16FKC.

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

Outline type codes: DO8 and DO8C.

See Package Details for further information.

CURRENT RATINGS

Symbol Parameter Conditions UnitsMax.

I

F(AV)

Mean forward current

I

F(RMS)

RMS value

Half wave resistive load, T

case

= 65oC 205 A

T

case

= 65oC 236 A

SV15..F

Fast Recovery Diode

Replaces March 1998 version, DS4209-2.2 DS4209-3.0 January 2000

SV15..F

2/7

SURGE RATINGS

Conditions

Max. Units

3.0 kA

45 x 103A2sI2t for fusingI2t

Surge (non-repetitive) forward currentI

FSM

ParameterSymbol

10ms half sine; with 0% V

RRM, Tj

= 150oC

-kA

-A

2

sI2t for fusingI2t

Surge (non-repetitive) forward currentI

FSM

10ms half sine; with 50% V

RRM, Tj

= 150oC

THERMAL AND MECHANICAL DATA

dc

Conditions Max. Units

o

C/W- 0.02

Thermal resistance - case to heatsinkR

th(c-h)

Thermal resistance - junction to caseR

th(j-c)

Mounting torque 15Nm
with mounting compound

Symbol

Parameter

- 0.23

o

C/W

Min.

t

rr

20

Symbol Typ. Units

Parameter

V

FM

Forward voltage

I

RRM

Peak reverse current
Reverse recovery time

Q

RA1

Recovered charge (50% chord)

I

RM

Reverse recovery current

K

Soft factor

V

TO

Threshold voltage

r

T

Slope resistance

V

FRM

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC--V

At T

vj

= 150oC - 1.33 mΩ

At Tvj = 150oC - 1.0 V

---

-21A

-35µC

- 3.2

µs

At V

RRM

, T

case

= 150oC-mA

At 450A peak, T

case

= 25oC - 1.6 V

Conditions Max.

I

F

= 450A, diRR/dt = 10A/µs

T

case

= 125oC, VR = 100V

CHARACTERISTICS

T

stg

Storage temperature range

-55 200

o

C

Nm

15.012.0Mounting torque-

T

vj

Virtual junction temperature

On-state (conducting) - 150

o

C

SV15..F

3/7

DEFINITION OF K FACTOR AND Q

RA1

0.5x I

RR

I

RR

dIR/dt

t

1

t

2

τ

Q

RA1

= 0.5x IRR(t1 + t2)

k = t

1/t2

CURVES

500

1000

1500

2000

2500

3000

Instantaneous forward current I

F

- (A)

1.0 2.0 3.0 4.0 5.0
Instantaneous forward voltage V

F

- (V)

Measured under pulse conditions

Tj = 150˚C

Tj = 25˚C

Fig.1 Maximum (limit) forward characteristics