DYNEX RD65FV04, RD65FV05, RD65FV06, RD65FV01, RD65FV02 Datasheet

RD65FV

Rectifier Diode

Target Information

Replaces November 2000, version DS5408-1.1 DS5408-2.0 October 2001

FEATURES

■ Optimised For High Current Rectifiers

■ High Surge Capability

■ Very Low On-state Voltage

APPLICATIONS

■ Electroplating

■ Power Supplies

■ Welding

VOLTAGE RATINGS

Part and Ordering

Number

RD65FV06 RD65FV05 RD65FV04 RD65FV03 RD65FV02 RD65FV01

Repetitive Peak

Reverse Voltage

V

RRM

V

600 500 400 300 200 100

ORDERING INFORMATION

Conditions

V

= V

RSM

RRM

KEY PARAMETERS V

RRM

I

F(AV)

I

FSM

(max) 11745A (max) 162000A

Outline type code: V

(See Package Details for further information)

Fig. 1 Package outline

600V

When ordering, select the required part number shown in the Voltage Ratings selection table.

For example:

RD65FV04

Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.

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RD65FV

CURRENT RATINGS

T

= 75oC unless otherwise stated

case

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

Mean forward current

RMS value

F

Continuous (direct) forward current

Half wave resistive load 11745 A

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

T

= 85oC unless otherwise stated

case

Symbol

Mean forward current

RMS value

Continuous (direct) forward current

Parameter

Half wave resistive load 7632 A

Test Conditions

Double Side Cooled

I

F(AV)

Mean forward current

Half wave resistive load

UnitsMax.

- 18450 A

- 16974 A

- 11988 A

- 10079 A

Max.

Units

11120

A

I

F(RMS)

I

F

RMS value

Continuous (direct) forward current

Single Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load

-

17500

16000

7200

-

11300

9450

A

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SURGE RATINGS

RD65FV

Symbol

I

FSM

I2t

I

FSM

I2t

Surge (non-repetitive) forward current

2

t for fusing

I

Surge (non-repetitive) forward current

2

t for fusing

I

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Test Conditions

10ms half sine, T

= 50% V

V

R

10ms half sine, T

V

R

case

- 1/4 sine

RRM

case

= 0

= 175˚C

Test Conditions

Double side cooled DC

Single side cooled Anode DC

Cathode DC

Clamping force 43.0kN Double side

(with mounting compound) Single side

Min.

-

Max.

130

84.5 x 10

162

132 x 10

Max.

0.0075

0.015

0.002

0.004

6

Units

kA

2

A

s

kA

2

s

A

Units

˚CW

T

vj

T

stg

F

m

Virtual junction temperature

Storage temperature range

Clamping force

CHARACTERISTICS

Symbol

I

RM

I

rr

Q

S

V

TO

r

T

Peak reverse current

Peak reverse recovery current

Total stored charge

Threshold voltage

Slope resistance

Parameter

Forward (conducting)

Reverse (blocking)

Test Conditions

, T

At V

RRM

= 2000A, dIRR/dt = 3A/µs,

I

F

= 200˚C, VR = 100V

T

case

= 200˚C

At T

vj

= 200˚C

At T

vj

= 200˚C

case

-

–55

38.7

Min.

-

225

200

47.3

Max.

150

230

39

0.6

0.0225

˚C

kN

Units

mA

A

µC

V

mΩ

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