DYNEX RD33FG01, RD33FG02, RD33FG03, RD33FG04, RD33FG05 Datasheet

RD33FG

Rectifier Diode

Target Information

Replaces November 2000, version DS5415-1.1 DS5415-2.0 October 2001

FEATURES

■ Optimised For High Current Rectifiers

■ High Surge Capability

■ Very Low On-state Voltage

APPLICATIONS

■ Electroplating

■ Power Supplies

■ Welding

VOLTAGE RATINGS

Part and Ordering

Number

RD33FG06 RD33FG05 RD33FG04 RD33FG03 RD33FG02 RD33FG01

Repetitive Peak

Reverse Voltage

V

RRM

V

600 500 400 300 200 100

ORDERING INFORMATION

Conditions

V

= V

RSM

RRM

KEY PARAMETERS V

RRM

I

F(AV)

I

FSM

(max) 3997A (max) 46750A

Outline type code: G

(See Package Details for further information)

Fig. 1 Package outline

600V

When ordering, select the required part number shown in the Voltage Ratings selection table.

For example:

RD33FG03

Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.

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RD33FG

CURRENT RATINGS

T

= 75oC unless otherwise stated

case

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

Mean forward current

RMS value

F

Continuous (direct) forward current

Half wave resistive load 3997 A

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

= 85˚C unless otherwise stated

T

case

Symbol

Mean forward current

RMS value

Continuous (direct) forward current

Parameter

Half wave resistive load 2831 A

Test Conditions

Double Side Cooled

I

F(AV)

Mean forward current

Half wave resistive load

UnitsMax.

- 6278 A

- 6358 A

- 4447 A

- 4401 A

Max.

Units

3830

A

I

F(RMS)

I

F

RMS value

Continuous (direct) forward current

Single Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load

-

6010

6080

2710

-

4260

4210

A

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SURGE RATINGS

RD33FG

Symbol

I

FSM

I2t

I

FSM

I2t

Surge (non-repetitive) forward current

2

t for fusing

I

Surge (non-repetitive) forward current

2

t for fusing

I

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Test Conditions

10ms half sine, T

= 50% V

V

R

10ms half sine, T

V

R

case

- 1/4 sine

RRM

case

= 0

= 175˚C

Test Conditions

Double side cooled DC

Single side cooled Anode DC

Cathode DC

Clamping force 12.0kN Double side

(with mounting compound) Single side

10.93 x 10

Min.

-

Max.

37.4

7.0 x 10

46.75

Max.

0.032

0.064

0.008

0.016

Units

kA

2

6

s

A

kA

2

6

s

A

Units

˚CW

T

vj

T

stg

F

m

Virtual junction temperature

Storage temperature range

Clamping force

CHARACTERISTICS

Symbol

I

RM

I

rr

Q

S

V

TO

r

T

Peak reverse current

Peak reverse recovery current

Total stored charge

Threshold voltage

Slope resistance

Parameter

Forward (conducting)

Reverse (blocking)

Test Conditions

, T

At V

RRM

= 1000A, dIRR/dt = 3A/µs,

I

F

= 200˚C, VR = 100V

T

case

= 200˚C

At T

vj

= 200˚C

At T

vj

= 200˚C

case

-

–55

10.8

Min.

-

225

200

13.2

Max.

50

30

160

0.6

0.0872

˚C

kN

Units

mA

A

µC

V

mΩ

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