MA9264
4/15
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = VSS to 3.0V (TTL) and VSS to 4.0V (CMOS).
2. Times measurement reference level = 1.5V.
3. Input Rise and Fall times ≤5ns.
4. Output load 1TTL gate and CL = 60pF.
5. Transition is measured at ±500mV from steady state.
6. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at TA = -55°C to +125°C with V
DD
= 5V±10% and to post 100k Rad(Si) total dose radiation
at TA = 25°C with VDD = 5V ±10%. GROUP A SUBGROUPS 9, 10, 11.
MAX9264X70 MAX9264X95
Symbol Parameter Min Max Min Max Units
T
AVAVR
Read Cycle Time 70 - 95 - ns
T
AVQV
Address Access Time - 65 - 90 ns
T
EHQV
Chip Select Access Time - 70 - 95 ns
T
SLQV
Chip Enable Access Time - 70 - 95 ns
T
EHQX
(5,6) Chip Selection to Output in Low Z 15 - 15 - ns
T
SLQX
(5,6) Chip Enable to Output in Low Z 15 - 15 - ns
T
ELQZ
(5,6) Chip Deselection to Output in High Z 0 20 0 20 ns
T
SHQZ
(5,6) Chip Disable to Output in High Z 0 20 0 20 ns
T
AXQX
Output Hold from Address Change 30 - 40 - ns
T
GLQV
Output Enable Access Time - 25 - 30 ns
T
GLQX
(5,6) Output Enable to Output in Low Z 15 - 15 - ns
T
GHQZ
(5,6) Output Enable to Output in High Z 0 20 0 20 ns
Figure 6: Read Cycle AC Electrical Characteristics
MAX9264X70 MAX9264X95
Symbol Parameter Min Max Min Max Units
T
AVAVW
Write Cycle Tlme 55 - 60 - ns
T
EHWH
Chip Selection to End of Write 50 - 60 - ns
T
SLWH
Chip Enable to End of Write 50 - 60 - ns
T
AVWH
Address Valid to End of Write 50 - 55 - ns
T
AVWL
Address Set Up Time 0 - 0 - ns
T
WLWH
Write Pulse Width 40 - 45 - ns
T
WHAV
Write Recovery Time 0 - 0 - ns
T
WLQZ
(5,6) Wnte to Output in High Z 0 20 0 20 ns
T
DVWH
Data to Write Time Overlap 25 - 30 - ns
T
WHDX
Data Hold from Write 0 - 0 - ns
T
WHQX
(5,6) Output Active from End to Write 0 20 0 20 ns
Figure 7: Write Cycle AC Electrical Characteristics