DYNEX MAS9264T95LD, MAS9264T95LC, MAS9264T95LB, MAS9264T95FS, MAS9264T95FE Datasheet

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MA9264
1/15
The MA9264 64k Static RAM is configured as 8192x8 bits and
manufactured using CMOS-SOS high performance, radiation hard,
1.5µm technology. The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected when chip select is in the HIGH state.
See Application Note “Overview of the Dynex Semiconductor
Radiation Hard 1.5µm CMOS/SOS SRAM Range”.
FEATURES
1.5µm CMOS-SOS Technology
Latch-up Free
Fast Access Time 70ns Typical
Total Dose 10
6
Rad(Si)
Transient Upset >10
11
Rad(Si)/sec
SEU 4.3 x 10
-11
Errors/bitday
Single 5V Supply
Three State Output
Low Standby Current 100µA Typical
-55°C to +125°C Operation
All Inputs and Outputs Fully TTL or CMOS
Compatible
Fully Static Operation
Operation Mode CS CE OE WE I/O Power
Read L H L H D OUT Write L H X L D IN ISB1
Output Disable L H H H High Z
Standby H X X X High Z ISB2
XLXX X
Figure 1: Truth Table
Figure 2: Block Diagram
A12
A9 A8
A4 A3
A6 A5
A7
A D D R E S S
B U F F E R
R O W
D E C O D E R
A10 A0 A1 A2 A11
CS
CE
WE
OE
MA9264
Radiation Hard 8192x8 Bit Static RAM
Replaces June 1999 version, DS3692-6.0 DS3692-7.0 January 2000
MA9264
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SIGNAL DEFINITIONS
A0-12
Address input pins which select a particular eight bit word within the memory array.
D0-7
Bidirectional data pins which serve as data outputs during a read operation and as data inputs during a write operation.
CS
Chip Select, which, at low level, activates a read or write operation. When at a high level it defaults the SRAM to a prechargencondition and holds the data output drivers in a high impedance state.
WE
Write Enable which when at a low level enables a write and holds data output drivers in a high impedance state. When at a high level, it enables a read.
OE
Output Enable which when at a high level holds the data output drivers in a high impedance state. When at a low level, data output driver state is defined by CS, WE and CE. If this signal is not used it must be connected to VSS.
CE
Chip Enable which when at a high level allows normal operation. When at a low level it defaults the SRAM to a precharge condition, disables the input circuits on all input pins and holds the data output drivers in a high impedance state. If this signal is not used it must be connected to VDD.
MA9264
3/15
CHARACTERISTICS AND RATINGS
Symbol Parameter Min. Max. Units
V
CC
Supply Voltage -0.5 7.0 V
V
I
Input Voltage -0.3 VDD+0.3 V
T
A
Operating Temperature -55 125 °C
T
S
Storage Temperature -65 150 °C
Figure 3: Absolute Maximum Ratings
Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functlonal operation of the device at these condltions, or at any other condition above those indicated in the operations section of this specification, is not Implied Exposure to absolute maxlmum rating conditions for extended perlods may affect device reliability.
Notes for Tables 4 and 5: Characteristics apply to pre radiation at T
A
= -55°C to +125°C with VDD = 5V ±10% and to post 100k Rad(Si) total dose radiation at TA = 25°C with VDD = 5V ±10% (characteristics at higher radiation levels available on request). GROUP A SUBGROUPS 1, 2, 3.
Symbol Parameter Conditions (Option) Min. Typ. Max. Units
V
DD
Supply voltage - 4.5 5.0 5.5 V
V
lH
Logical ‘1’ Input Voltage - (TTL) VDD/2 - V
DD
V
(CMOS) 0.8 V
DD
-VDDV
V
lL
Logical ‘0’ Input Voltage - (TTL) V
SS
- 0.8 V
(CMOS) V
SS
- 0.2 V
DD
V
V
OH1
Logical ‘1’ Output Voltage I
OH1
= -2mA 2.4 - - V
V
OH2
Logical ‘1’ Output Voltage I
OH2
= -1mA V
DD
-0.5 - - V
V
OL
Logical ‘0’ Output Voltage IOL = 4mA - - 0.4 V
I
LI
Input Leakage Current VIN = VDD or VSS All inputs - - ±10 µA
I
LO
Output Leakage Current Chip disabled, V
OUT
= VDD or V
SS
--±10 µA
I
SB1
Selected Static Current (CMOS) All inputs = V
DD
-0.2V - 0.1 10 mA
except CS = V
SS
+0.2V
I
DD
Dynamic Operating Current fRC = 1MHz, all inputs - 6 18 mA (CMOS) switching, VIH = V
DD
-0.2V
I
SB2
Standby Supply Current CS = V
DD
-0.2V - 0.1 10 mA
CE = V
SS
+0.2V
Figure 4: Electrical Characteristics
Symbol Parameter Conditions (Option) Min. Typ. Max. Units
V
DR
VCC for Data Retention CS = V
DR,
CE = V
SS
2.0 - - V
I
DDR
Data Retention Current CS = VDR, VDR = 2.0V - 0.05 4 mA
CE = V
SS
Figure 5: Data Retention Characteristics
MA9264
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AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = VSS to 3.0V (TTL) and VSS to 4.0V (CMOS).
2. Times measurement reference level = 1.5V.
3. Input Rise and Fall times 5ns.
4. Output load 1TTL gate and CL = 60pF.
5. Transition is measured at ±500mV from steady state.
6. This parameter is sampled and not 100% tested. Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at TA = -55°C to +125°C with V
DD
= 5V±10% and to post 100k Rad(Si) total dose radiation
at TA = 25°C with VDD = 5V ±10%. GROUP A SUBGROUPS 9, 10, 11.
MAX9264X70 MAX9264X95
Symbol Parameter Min Max Min Max Units
T
AVAVR
Read Cycle Time 70 - 95 - ns
T
AVQV
Address Access Time - 65 - 90 ns
T
EHQV
Chip Select Access Time - 70 - 95 ns
T
SLQV
Chip Enable Access Time - 70 - 95 ns
T
EHQX
(5,6) Chip Selection to Output in Low Z 15 - 15 - ns
T
SLQX
(5,6) Chip Enable to Output in Low Z 15 - 15 - ns
T
ELQZ
(5,6) Chip Deselection to Output in High Z 0 20 0 20 ns
T
SHQZ
(5,6) Chip Disable to Output in High Z 0 20 0 20 ns
T
AXQX
Output Hold from Address Change 30 - 40 - ns
T
GLQV
Output Enable Access Time - 25 - 30 ns
T
GLQX
(5,6) Output Enable to Output in Low Z 15 - 15 - ns
T
GHQZ
(5,6) Output Enable to Output in High Z 0 20 0 20 ns
Figure 6: Read Cycle AC Electrical Characteristics
MAX9264X70 MAX9264X95
Symbol Parameter Min Max Min Max Units
T
AVAVW
Write Cycle Tlme 55 - 60 - ns
T
EHWH
Chip Selection to End of Write 50 - 60 - ns
T
SLWH
Chip Enable to End of Write 50 - 60 - ns
T
AVWH
Address Valid to End of Write 50 - 55 - ns
T
AVWL
Address Set Up Time 0 - 0 - ns
T
WLWH
Write Pulse Width 40 - 45 - ns
T
WHAV
Write Recovery Time 0 - 0 - ns
T
WLQZ
(5,6) Wnte to Output in High Z 0 20 0 20 ns
T
DVWH
Data to Write Time Overlap 25 - 30 - ns
T
WHDX
Data Hold from Write 0 - 0 - ns
T
WHQX
(5,6) Output Active from End to Write 0 20 0 20 ns
Figure 7: Write Cycle AC Electrical Characteristics
MA9264
5/15
Symbol Parameter Conditions Min. Typ. Max. Units
C
IN
Input Capacitance Vl = 0V - 3 5 pF
C
OUT
Output Capacitance V
I/O
= 0V - 5 7 pF
Note: T
A
= 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
Symbol Parameter Conditions
F
T
Basic Functionality VDD = 4.5V - 5.5V, FREQ = 1MHz
VIL = VSS, VIH = VDD, VOL 1.5V, VOH 1.5V TEMP = -55°C to +125°C, GPS PATTERN SET GROUP A SUBGROUPS 7, 8A, 8B
Figure 9: Functionality
Subgroup Definition
1 Static characteristics specified in Tables 4 and 5 at +25°C 2 Static characteristics specified in Tables 4 and 5 at +125°C 3 Static characteristics specified in Tables 4 and 5 at -55°C
7 Functional characteristics specified in Table 9 at +25°C 8A Functional characteristics specified in Table 9 at +125°C 8B Functional characteristics specified in Table 9 at -55°C
9 Switching characteristics specified in Tables 6 and 7 at +25°C 10 Switching characteristics specified in Tables 6 and 7 at +125°C 11 Switching characteristics specified in Tables 6 and 7 at -55°C
Figure 10: Definition of Subgroups
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