DYNEX MAS5114LS, MAS5114LL, MAS5114LD, MAS5114CE, MAS5114CD Datasheet

MA5114

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The MA5114 4k Static RAM is configured as 1024 x 4 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology.

The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when Chip Select is in the HIGH state.

FEATURES

■ 3µm CMOS-SOS Technology

■ Latch-up Free

■ Fast Access Time 90ns Typical

■ Total Dose 10

6

Rad(Si)

■ Transient Upset >10

10

Rad(Si)/sec

■ SEU <10

-10

Errors/bitday

■ Single 5V Supply

■ Three State Output

■ Low Standby Current 50µA Typical

■ -55°C to +125°C Operation

■ All Inputs and Outputs Fully TTL or CMOS

Compatible

■ Fully Static Operation

■ Data Retention at 2V Supply

Figure 2: Block Diagram

Operation Mode CS WE I/O Power

Read L H D OUT ISB1
Write L L D IN

Standby H X High Z ISB2

Figure 1: Truth Table

MA5114

Radiation hard 1024x4 Bit Static RAM

Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000

MA5114

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Symbol Parameter Min. Max. Units

V

CC

Supply Voltage -0.5 7 V

V

I

Input Voltage -0.3 VDD+0.3 V

T

A

Operating Temperature -55 125 °C

T

S

Storage Temperature -65 150 °C

Figure 3: Absolute Maximum Ratings

Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.

Notes for Tables 4 and 5:

1. Characteristics apply to pre radiation at T

A

= -55°C to +125°C with VDD = 5V ±10% and to post 100k Rad(Si) total dose

radiation at TA = 25°C with VDD = 5V ±10% (characteristics at higher radiation levels available on request).

2. Worst case at TA = +125°C, guaranteed but not tested at TA = -55°C.
GROUP A SUBGROUPS 1, 2, 3.

Symbol Parameter Conditions Min. Typ. Max. Units

V

DD

Supply voltage - 4.5 5.0 5.5 V

V

lH

Input High Voltage - VDD/2 - V

DD

V

V

lL

Input Low Voltage - V

SS

- 0.8 V

V

OH

Output High Voltage I

OH1

= -1mA 2.4 - - V

V

OL

Output Low Voltage IOL = 2mA - - 0.4 V

I

LI

Input Leakage Current (note 2) All inputs except CS --±10 µA

I

LO

Output Leakage Current (note 2) Output disabled, V

OUT

= VSS or V

DD

--±20 µA

I

PUI

Input Pull-Up Current VIN = VSS on CS input only - - -100 µA

I

PDI

Input Leakage Current VIN = VSS on CS input only - - 5 µA

I

DD

Power Supply Current fRC = 1MHz, CS = 50% mark:space- 12 16 mA

I

SB1

Selected Supply Current CS = V

SS

-2535mA

I

SB2

Standby Supply Current Chip disabled - 50 3000 µA

Figure 4: Electrical Characteristics

Symbol Parameter Conditions Min. Typ. Max. Units

V

DR

VCC for Data Retention CS = V

DR

2.0 - - V

I

DDR

Data Retention Current CS = VDR, VDR = 2.0V - 30 2000 µA

Figure 5: Data Retention Characteristics

CHARACTERISTICS AND RATINGS

MA5114

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AC CHARACTERISTICS

Conditions of Test for Tables 5 and 6:

1. Input pulse = VSS to 3.0V.

2. Times measurement reference level = 1.5V.

3. Transition is measured at ±500mV from steady state.

4. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:

Characteristics apply to pre-radiation at TA = -55°C to +125°C with V

DD

= 5V±10% and to post 100k Rad(Si) total dose radiation

at TA = 25°C with VDD = 5V ±10%. GROUP A SUBGROUPS 9, 10, 11.

Symbol Parameter Min Max Units

T

AVAVR

Read Cycle Time 135 - ns

T

AVQV

Address Access Time - 135 ns

T

ELQV

Chip Select to Output Valid - 135 ns

T

ELQX

(3,4) Chip Select to Output Active 10 - ns

T

ELQZ

(3,4) Chip Select to Output Tri State 10 50 ns

T

AXQX

Output Hold from Address Change 10 - ns

Figure 6: Read Cycle AC Electrical Characteristics

Symbol Parameter Min Max Units

T

AVAVW

Write Cycle Tlme 135 - ns

T

AVWL

Address Set Up Time 10 - ns

T

WLWH

Write Pulse Width 50 - ns

T

WHAV

Write Recovery Time 5 - ns

T

DVWH

Data Set Up Time 35 - ns

T

NHDX

Data Hold Time 5 - ns

T

WLQZ

(3,4) Write Enable to Output Tri State 10 50 ns

T

ELWL

Chip Selection to Write Low 25 - ns

T

ELWH

Chip Selection to End of Write 85 - ns

T

AVWH

Address Valid to End of Write 80 - ns

T

WHQX

(3,4) Output Active from End to Write 5 - ns

Figure 7: Write Cycle AC Electrical Characteristics

Symbol Parameter Conditions Min. Typ. Max. Units

C

IN

Input Capacitance Vl = 0V - 6 10 pF

C

OUT

Output Capacitance VO = 0V - 8 12 pF

Note: T

A

= 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.

Figure 8: Capacitance

MA5114

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Symbol Parameter Conditions

F

T

Basic Functionality VDD = 4.5V - 5.5V, FREQ = 1MHz

V

IL

= VSS, VIH = VDD, VOL ≤ 1.5V, VOH ≥ 1.5V
TEMP = -55°C to +125°C, GPS PATTERN SET
GROUP A SUBGROUPS 7, 8A, 8B

Figure 9: Functionality

Subgroup Definition

1 Static characteristics specified in Tables 4 and 5 at +25°C
2 Static characteristics specified in Tables 4 and 5 at +125°C
3 Static characteristics specified in Tables 4 and 5 at -55°C

7 Functional characteristics specified in Table 9 at +25°C
8A Functional characteristics specified in Table 9 at +125°C
8B Functional characteristics specified in Table 9 at -55°C

9 Switching characteristics specified in Tables 6 and 7 at +25°C
10 Switching characteristics specified in Tables 6 and 7 at +125°C
11 Switching characteristics specified in Tables 6 and 7 at -55°C

Figure 10: Definition of Subgroups