DYNEX GP800NSS33 Datasheet
GP800NSS33
GP800NSS33
Single Switch IGBT Module
Preliminary Information
Replaces February 2000 version, DS5358-2.0 DS5358-2.1 March 2001
FEATURES
■ Non Punch Through Silicon
■ Isolated Copper Baseplate with AL
■ Low Inductance Internal Construction
Substrate
2O3
APPLICATIONS
■ High Power Inverters
■ Motor Controllers
■ Induction Heating
■ Resonant Converters
The Powerline range of high power modules includes dual,
half bridge and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP800NSS33 is a single switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP800NSS33
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
V
I
C
I
C(PK)
CES
CE(sat)
(typ) 3.6V
(max) 800A
(max) 1600A
Aux C
G
Aux E
Fig. 1 Single switch circuit diagram
1
C
2
E
G
3300V
External connection
E1 E2
External connection
E1
E2
C1
C2
C2C1
2
E
- Aux Emitter
1
C
- Aux Collector
Outline type code: N
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9
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GP800NSS33
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Parameter
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(j-c)
Thermal resistance - transistor
Thermal resistance - diode
Parameter
Test Conditions
= 0V
V
GE
-
T
= 70˚C
case
1ms, T
T
case
= 110˚C
case
= 25˚C, Tj = 150˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
Min.
-
-
Max.
3300
±20
800
1600
8.3
6
Max.
15
30
Units
V
V
A
A
kW
kV
Units
˚C/kW
˚C/kW
junction to case
R
th(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
-
˚C/kW
8
(with mounting grease)
-
T
Junction temperature
j
Transistor
Diode
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
-
–40
Electrical connections - M4
Electrical connections - M8
125
-
125
125
-
-
-
5
2
10
˚C
˚C
˚C
Nm
Nm
Nm
2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ELECTRICAL CHARACTERISTICS
T
= 25˚C unless stated otherwise.
case
GP800NSS33
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Test Conditions
= 0V, VCE = V
V
GE
VGE = 0V, VCE = V
= ±20V, VCE = 0V
V
GE
= 120mA, VGE = V
I
C
CES
CES
, T
CE
VGE = 15V, IC = 800A
= 15V, IC = 800A, , T
V
GE
DC
= 1ms
t
p
= 800A
I
F
= 800A, T
I
F
= 25V, VGE = 0V, f = 1MHz
V
CE
= 125˚C
case
-
= 125˚C
case
case
= 125˚C
Min.
-
-
-
4
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
3.6
4.5
-
-
2.3
2.4
200
15
Max.
2
70
12
7.5
4.3
5
800
1600
2.9
3
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9
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