DYNEX GP800NSM33 Datasheet

GP800NSM33

Hi-Reliability Single Switch IGBT Module

Preliminary Information

DS5372-2.0 February 2001

FEATURES

■ High Thermal Cycling Capability

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

■ 3300V Rating

■ 800A Per Module

APPLICATIONS

■ High Reliability Inverters

■ Motor Controllers

■ Traction Drives

■ Resonant Converters

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.

The GP800NSM33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability.

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

KEY PARAMETERS V V I

C

I

C(PK)

CES CE(sat)

(typ) 3.4V (max) 800A (max) 1600A

External connection

Aux C

G Aux E

External connection

Fig. 1 Single switch circuit diagram

1

C

2

E

G

3300V

C2C1

E1 E2

E1

E2

C1

C2

Order As:

GP800NSM33

Note: When ordering, please use the complete part number.

2

E

- Aux Emitter

1

C

- Aux Collector

Outline type code: N

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9

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GP800NSM33

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Parameter

Test Conditions

= 0V

V

GE

-

T

= 80˚C

case

1ms, T

T

case

= 120˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

Max.

3300

±20

800

1600

9.6

6000

Max.

13

26

Units

V

A

kW

V

Units

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

˚C/kW

6

(with mounting grease)

-

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

–40

Electrical connections - M4

Electrical connections - M8

125

-

125

-

5

2

10

˚C

Nm

2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP800NSM33

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 120mA, VGE = V

I

C

CES

, T

CE

VGE = 15V, IC = 800A

= 15V, IC = 800A, T

V

GE

= 125˚C, T

DC, T

vj

= 1ms, T

t

p

= 800A

I

F

= 800A, T

I

F

V

CE

case

= 25V, VGE = 0V, f = 1MHz

case

= 110˚C

= 125˚C

= 70˚C

-

= 125˚C

case

= 125˚C

case

Min.

-

4.5

-

Typ.

-

5.5

3.4

4.3

-

2.3

2.4

200

15

Max.

2

70

12

6.5

4.3

5

800

1600

2.9

3

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/9

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