DYNEX GP800DDS18 Datasheet
GP800DDS18
13
24
12
11
10
7
6
5
8
9
GP800DDS18
Dual Switch IGBT Module
Replaces October 2000 version, DS5165-4.2 DS5165-5.0 January 2001
FEATURES
■ Non Punch Through Silicon
■ Isolated Copper Baseplate With Al
■ Low Inductance Internal Construction
■ Full 1800V Rating
■ 800A Per Arm
Substrate
2O3
APPLICATIONS
■ High Power Inverters
■ Motor Controllers
■ Induction Heating
■ Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP800DDS18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
KEY PARAMETERS
V
V
I
C
I
C(PK)
CES
CE(sat)
(typ) 3.5V
(max) 800A
(max) 1600A
2
12(C
)
2(C
)
2
1
7(C
)
Fig. 1 Dual switch circuit diagram
1800V
4(E2)
1(E1)
11(G
10(E
3(C1)
5(E
6(G
2
)
2
)
1
)
1
)
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP800DDS18
Note: When ordering, please use the complete part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
www.dynexsemi.com
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Outline type code: D
GP800DDS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage
Parameter
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(j-c)
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Parameter
Test Conditions
= 0V
V
GE
-
= 55˚C for Tj = 125˚C
T
case
1ms, T
T
case
= 100˚C
case
= 25˚C, Tj = 150˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
Min.
-
-
Max.
1800
±20
800
1600
6000
4000
Max.
21
40
Units
V
V
A
A
W
V
Units
˚C/kW
˚C/kW
junction to case
R
th(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
-
˚C/kW
8
(with mounting grease)
-
T
Junction temperature
j
Transistor
Diode
T
stg
-
Storage temperature range
Screw torque
Mounting - M6
-
–40
Electrical connections - M4
Electrical connections - M8
150
-
125
125
-
-
-
5
2
10
˚C
˚C
˚C
Nm
Nm
Nm
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
T
= 25˚C unless stated otherwise.
case
GP800DDS18
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Test Conditions
= 0V, VCE = V
V
GE
VGE = 0V, VCE = V
= ±20V, VCE = 0V
V
GE
I
= 40mA, VGE = V
C
CES
CES
, T
CE
VGE = 15V, IC = 800A
= 15V, IC = 800A, , T
V
GE
DC
= 1ms
t
p
= 800A
I
F
= 800A, T
I
F
= 25V, VGE = 0V, f = 1MHz
V
CE
= 125˚C
case
-
= 125˚C
case
case
= 125˚C
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
3.5
4.3
-
-
2.2
2.3
90
20
Max.
1
25
4
6.5
4
5
800
1600
2.5
2.6
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
www.dynexsemi.com
Loading...