DYNEX GP800DDS12 Datasheet

GP800DDS12

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24

12

11

10

7

6

5

8

9

GP800DDS12

Powerline N-Channel Dual Switch IGBT Module

Replaces October 1999 version, DS5172-3.0 DS5172-4.0 January 2000

The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands.

Typical applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters.

V V I

C

I

C(PK)

CES CE(sat)

KEY PARAMETERS

1200V (typ) 2.7V (max) 800A (max) 1600A

FEATURES

■ n - Channel

■ Enhancement Mode

■ High Input Impedance

■ Optimised For High Power High Frequency Operation

■ Isolated Base

■ Full 1200V Capability

■ 800A Per Arm

APPLICATIONS

■ High Power Switching

■ Motor Control

■ Inverters

■ Traction Systems

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

Outline type code: D

(See package details for further information)

Fig. 1 Electrical connections - (not to scale)

2

)

12(C

2(C

2

7(C

)

1

)

4(E2)

1(E1)

11(G 10(E

3(C1)

5(E 6(G

2

)

1

)

1

)

Fig.2 Dual switch circuit diagram

ORDERING INFORMATION

Order As: GP800DDS12 Note: When ordering, please use the whole part number.

1/11

GP800DDS12

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed.

T

= 25˚C unless stated otherwise.

case

Test ConditionsSymbol

V

I

C(PK)

CES

GES

I

C

max

isol

Collector-emitter voltage Gate-emitter voltage

Collector current

Isolation voltageV

VGE = 0V 1200

DC, T DC, T 1ms, T T

case

= 25˚C 1050

case

= 75˚C 800 A

case

= 75˚C A1600

case

= 25˚C (Transistor)

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

THERMAL AND MECHANICAL RATINGS

Symbol Conditions

DC junction to case

Mounting torque 5Nm (with mounting grease)

Transistor Diode

R

R R

th(j-c)

th(c-h)

T

j

Thermal resistance - transistor (per arm) Thermal resistance - diode (per arm) DC junction to case

Thermal resistance - Case to heatsink (per module)

Junction temperature

Max.Parameter

6000Maximum power dissipationP

Min.Parameter Units

-

Max.

8-

Units

V V±20 A

W

V2500

o

C/kW21

o

C/kW40-

o

C/kW

o

C150

o

C125-

T

stg

- Mounting - M6 Nm5-

Storage temperature range Screw torque

-

Electrical connections - M4 Nm2Electrical connections - M8 Nm10-

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

2/11

–40

125

o

C

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP800DDS12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(SAT)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Conditions

VGE = 0V, VCE = V VGE = 0V, VCE = V

CES

, T

VGE = ±20V, VCE = 0V

= 125˚C mA50--

case

CE

Min.

VGE = 15V, IC =800A

Collector-emitter saturation voltage

= 125˚C

case

Diode forward current

Diode maximum forward current

DC tp = 1ms A

Diode forward voltage IF = 800A 2.42.2-

Input capacitance Module inductance

IF = 800A, T

VCE = 25V, VGE = 0V, f = 1MHz

= 125˚C 2.52.3-

case

-

Typ.

-

Max.

-

-4IC = 120mA, VGE = V

1600

-

±4

3.52.7-

4.03.2-VGE = 15V, IC = 800A, T

800

Units

mA1

µA

V7.5 V V

A

V

90

-

nF

nH

-20

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/11

GP800DDS12

INDUCTIVE SWITCHING CHARACTERISTICS

For definition of switching waveforms, refer to figure 3 and 4.

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

E

OFF

t

d(on)

E

ON

Q

T

= 125˚C unless stated otherwise.

case

t

d(off)

t

E

OFF

t

d(on)

Turn-off delay time

Fall time

f

Turn-off energy loss

Turn-on delay time ns

Rise time

r

Turn-on energy loss

Diode reverse recovery charge

rr

Diode reverse recovery charge

rr

Turn-off delay time

Fall time

f

Turn-off energy loss

Turn-on delay time ns

Rise time

r

Parameter Min. Typ. Max. Units

Conditions

IC = 800A VGE = ±15V VCE = 600V

R

= R

G(ON)

G(OFF)

L ~ 100nH

IF = 800A

VR = 50%V

dIF/dt = 2000A/µs

IC = 800A VGE = ±15V VCE = 600V

R

= R

G(ON)

G(OFF)

L ~ 100nH

= 3.3Ω

,

CES

= 3.3Ω

-

1100

150

-

130

1300

200 170

ns ns

mJ

900- 800

320

-t 90

-

150-

-

1300

200

-

170

-

400

130

200

1500

250 250

ns

mJ

µC

µC-170-

ns ns

mJ

1200- 950

350

-t

450

ns

4/11

E

Q

Turn-on energy loss

ON

Diode reverse recovery charge

rr

Diode reverse recovery charge

rr

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

IF = 800A

VR = 50%V

CES

,

dIF/dt = 2000A/µs

150

-

200

260200-

mJ

µC

µC-225-