DYNEX GP800DDM12 Datasheet

GP800DDM12

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24

12

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10

7

6

5

8

9

GP800DDM12

Hi-Reliability Dual Switch IGBT Module

Advance Information

Replaces May 2000 version, DS5291-1.3 DS5291-2.0 October 2000

FEATURES

■ High Thermal Cycling Capability

■ 800A Per Switch

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ High Reliability Inverters

■ Motor Controllers

■ Traction Drives

■ Resonant Converters

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.

The GP800DDM12 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability.

KEY PARAMETERS V V I

C

I

C(PK)

CES CE(sat)

(typ) 2.7V (max) 800A (max) 1600A

2

12(C

)

2(C

)

2

1

7(C

)

Fig. 1 Dual switch circuit diagram

1200V

4(E2)

1(E1)

11(G 10(E

3(C1)

5(E 6(G

2

)

2

)

1

)

1

)

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP800DDM12

Note: When ordering, please use the whole part number.

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11

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Outline type code: D

GP800DDM12

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Parameter

Test Conditions

= 0V

V

GE

-

= 80˚C

T

case

1ms, T

T

case

= 105˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

Max.

1200

±20

800

1600

6490

4000

Max.

18

40

Units

V

A

W

V

Units

˚C/kW

R

th(c-h)

T

stg

-

Thermal resistance - case to heatsink (per module)

Junction temperature

j

Storage temperature range

Screw torque

junction to case

Mounting torque 5Nm

(with mounting grease)

Transistor

Diode

-

Mounting - M6

Electrical connections - M4

Electrical connections - M8

-

–40

-

8

150

125

5

2

10

˚C/kW

˚C

Nm

2/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP800DDM12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

V

= 0V, VCE = V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 120mA, VGE = V

I

C

CES

, T

CE

VGE = 15V, IC = 800A

= 15V, IC = 800A, , T

V

GE

DC, T

t

p

I

F

I

F

V

= 50˚C

case

= 1ms

= 800A

= 800A, T

= 25V, VGE = 0V, f = 1MHz

CE

= 125˚C

case

-

= 125˚C

case

= 125˚C

Min.

-

4

-

Typ.

-

2.7

3.2

-

2.2

2.3

90

20

Max.

1

50

±4

7.5

3.5

4

800

1600

2.4

2.5

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11

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GP800DDM12

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

T

= 125˚C unless stated otherwise

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

Symbol

t

d(off)

Turn-off delay time

Parameter

Test Conditions

= 800A

I

C

V

= ±15V

GE

= 600V

V

CE

R

G(ON)

= R

G(OFF)

= 3.3Ω

L ~ 100nH

IF = 800A, VR = 50% V

/dt = 2000A/µs

dI

F

Test Conditions

= 800A

I

C

Min.

,

CES

-1

Min.

Typ.

1100

-

150

-

130

-

800

-

320

-

150

-

Typ.

1300

-

Max.

1300

90

Max.

1500

200

170

900

400

130

200

Units

ns

mJ

ns

mJ

µC

Units

ns

E

t

E

t

OFF

d(on)

t

ON

Q

200

= ±15V

R

G(ON)

V

GE

= 600V

V

CE

= R

G(OFF)

L ~ 100nH

= 3.3Ω

f

Fall time

Turn-off energy loss

Turn-on delay time

r

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

IF = 800A, VR = 50% V

dI

/dt = 2000A/µs

F

,

CES

-1

-

170

-

950

-

350

-

150

-

200

-

250

1200

450

200

260

ns

mJ

ns

mJ

µC

4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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