DYNEX GP401LSS18 Datasheet

GP401LSS18

Powerline N-Channel Single Switch Low Loss IGBT Module

Preliminary Information

DS5288-1.3 January 2000

The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands.

Typical applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters.

KEY PARAMETERS

V

CES

V

CE(sat)

I

C70

I

C(PK)80

I

C25

4

5

3

(typ) 2.6V (max) 400A (max) 800A (max) 600A

12

1800V

FEATURES

■n - Channel

■Enhancement Mode

■High Input Impedance

■Optimised For High Power High Frequency Operation

■Isolated Base

■Ultra Low V

CE(sat)

■400A Per Module

APPLICATIONS

■High Power Switching

■Motor Control

■Inverters

■Traction Systems

■Lower Loss Systems Retrofits

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

Module outline type code: L

(See package details for further information)

Fig.1 Electrical connections - (not to scale)

2(E)

5(E1)

1

3(G

)

Fig.2 Single switch circuit diagram

1(C)

4(C1)

ORDERING INFORMATION

Order As: GP401LSS18 Note: When ordering, please use the complete part number.

1/11

GP401LSS18

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress

rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.

= 25˚C unless stated otherwise.

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Parameter

Test Conditions

= 0V

V

GE

-

DC, T

1ms, T

T

= 25˚C

case

= 70˚C

case

= 80˚C (Transistor)

case

= 25˚C (Transistor)

case

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

DC junction to case

Min.

-

Max.

1800

±20

600

400

800

2980

4000

Max.

42

80

Units

V

A

W

V

Units

˚C/kW

R

th(c-h)

T

stg

-

Thermal resistance - case to heatsink (per module)

Junction temperature

j

Storage temperature range

Screw torque

Mounting torque 5Nm

(with mounting grease)

Transistor

Diode

-

Mounting - M6

Electrical connections - M4

-

–40

-

15

125

5

2

˚C/kW

˚C

Nm

2/11

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP401LSS18

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 40mA, VGE = V

I

C

CES

, T

CE

VGE = 15V, IC = 400A

= 15V, IC = 400A, , T

V

GE

DC, T

t

p

I

F

I

F

V

= 55˚C

case

= 1ms, T

case

= 80˚C

= 400A

= 400A, T

= 25V, VGE = 0V, f = 1MHz

CE

= 125˚C

case

-

= 125˚C

case

= 125˚C

Min.

-

4

-

Typ.

-

2.6

3.3

-

2.2

2.3

45

15

Max.

1

10

±2

7.5

3.2

4.0

400

800

2.5

2.6

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/11

GP401LSS18

ELECTRICAL CHARACTERISTICS

For definition of switching waveforms, refer to figure 3 and 4.

T

= 25˚C unless stated otherwise.

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

T

= 25˚C unless stated otherwise.

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

Symbol

t

d(off)

t

f

Turn-off delay time

Fall time

Parameter

Test Conditions

= 400A

I

C

V

= ±15V

GE

= 900V

V

CE

R

G(ON)

= R

G(OFF)

= 4.3Ω

L ~ 100nH

IF = 400A, VR = 50% V

/dt = 2500A/µs

dI

F

Test Conditions

= 400A

I

C

= ±15V

V

GE

CES

Min.

,

Min.

Typ.

900

-

280

-

150

-

500

-

200

-

140

-

65

Typ.

1010

-

390

-

Max.

1100

Max.

1200

350

200

650

400

180

85

500

Units

ns

mJ

ns

mJ

µC

Units

ns

E

t

E

OFF

d(on)

t

ON

Q

180

V

= R

G(ON)

L ~ 100nH

= 900V

CE

G(OFF)

= 4.3Ω

Turn-off energy loss

Turn-on delay time

r

Rise time

R

Turn-on energy loss

Diode reverse recovery charge

rr

IF = 400A, VR = 50% V

/dt = 2500A/µs

dI

F

CES

,

-

660

-

310

-

210

-

90

230

800

400

260

115

mJ

ns

mJ

µC

4/11

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.