DYNEX GP401DDS18 Datasheet

GP401DDS18

FEATURES

■ Low V

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

CE(SAT)

APPLICATIONS

■ High Reliability Inverters

■ Motor Controllers

■ Traction Drives

■ Resonant Converters

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

Low V

CE(SAT)

Dual Switch IGBT Module

KEY PARAMETERS V V I

C

I

C(PK)

CES CE(sat)

(typ) 2.6V (max) 400A (max) 800A

2

12(C

)

2(C

)

2

1

7(C

)

Preliminary Information

DS5272-3.0 January 2001

1800V

2

)

11(G

4(E2)

1(E1)

10(E2) 3(C1)

1

5(E

1

6(G

) )

The GP401DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low V losses, the module is of particular relevance in low to medium

to minimise conduction

CE(SAT)

frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP401DDS18

Note: When ordering, please use the whole part number.

Fig. 1 Dual switch circuit diagram

5

6

13

7

8

9

12

11

10

24

Outline type code: D

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

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GP401DDS18

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T

= 25˚C unless stated otherwise

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Parameter

Test Conditions

= 0V

V

GE

-

= 70˚C

T

case

1ms, T

T

case

= 110˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

Max.

1800

±20

400

800

3000

4000

Max.

42

80

Units

V

A

W

V

Units

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

˚C/kW

8

(with mounting grease)

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

Electrical connections - M4

Electrical connections - M8

-

–40

-

150

125

5

2

10

˚C

Nm

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP401DDS18

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 20mA, VGE = V

I

C

CES

, T

CE

VGE = 15V, IC = 400A

= 15V, IC = 400A, , T

V

GE

DC

= 1ms

t

p

IF = 400A

= 400A, T

I

F

= 25V, VGE = 0V, f = 1MHz

V

CE

= 125˚C

case

-

= 125˚C

case

= 125˚C

Min.

-

4.5

-

Typ.

-

5.5

2.6

3.3

-

2.2

2.3

45

20

Max.

1

12

±2

6.5

3.2

4

400

800

2.5

2.6

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

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GP401DDS18

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

rr

I

rr

E

REC

T

= 125˚C unless stated otherwise

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

Diode reverse current

Diode reverse recovery energy

Symbol

Parameter

Test Conditions

= 400A

I

C

= ±15V

V

GE

= 900V

V

CE

R

G(ON)

= R

G(OFF)

= 2.2Ω

L ~ 100nH

= 400A, VR = 50% V

I

F

/dt = 3000A/µs

dI

F

Test Conditions

CES

Min.

,

Min.

Typ.

900

-

330

-

180

-

500

-

200

-

200

-

80

250

70

Typ.

Max.

1100

400

250

650

400

230

100

Max.

Units

ns

mJ

ns

mJ

µC

-

A

mJ

Units

E

t

E

d(off)

d(on)

Q

I

REC

t

f

OFF

t

r

ON

rr

= 400A

R

G(ON)

I

C

= ±15V

V

GE

= 900V

V

CE

= R

G(OFF)

L ~ 100nH

= 2.2Ω

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

rr

Diode reverse recovery charge

Diode reverse current

IF = 400A, VR = 50% V

/dt = 2500A/µs

dI

F

CES

,

Diode reverse recovery energy

1010

-

450

-

250

-

600

-

310

-

200

-

110

-

300

-

190

-

1200

500

320

800

400

270

150

-

ns

mJ

ns

mJ

µC

A

mJ

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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