DYNEX GP401DDM18 Datasheet

GP401DDM18

13

24

12

11

10

7

6

5

8

9

GP401DDM18

FEATURES

■ Low V

■ 400A Per Switch

■ High Thermal Cycling Capability

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

CE(SAT)

APPLICATIONS

■ High Reliability

■ Motor Controllers

■ Traction Drives

■ Low Loss System Retrofit

Hi-Reliability Dual Switch Low V

KEY PARAMETERS V V I

C

I

C(PK)

CES CE(sat)

(typ) 2.6V (max) 400A (max) 800A

2

12(C

)

2(C

)

2

1

7(C

)

1800V

4(E2)

CE(SAT)

IGBT Module

Advance Information

DS5397-1.2 January 2001

2

)

11(G 10(E2)

3(C1)

1(E1)

5(E 6(G

1

)

1

)

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.

The GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low V losses, the module is of particular relevance in low to medium

to minimise conduction

CE(SAT)

frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability.

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP401DDM18

Note: When ordering, please use the complete part number.

Fig. 1 Dual switch circuit diagram

Outline type code: D

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/7

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(See Package Details for further information)

Fig. 2 Electrical connections - (not to scale)

GP401DDM18

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Parameter

Test Conditions

= 0V

V

GE

-

= 80˚C for Tj = 125˚C

T

case

1ms, T

T

case

= 110˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

Max.

1800

±20

400

800

3000

4000

Max.

36

80

Units

V

A

W

V

Units

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

15

˚C/kW

(with mounting grease)

-

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

–40

Electrical connections - M4

Electrical connections - M8

150

-

125

-

5

2

10

˚C

Nm

2/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP401DDM18

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

I

= 20mA, VGE = V

C

CES

, T

CE

VGE = 15V, IC = 400A

= 15V, IC = 400A, , T

V

GE

DC

= 1ms

t

p

= 400A

I

F

= 400A, T

I

F

= 25V, VGE = 0V, f = 1MHz

V

CE

= 125˚C

case

-

= 125˚C

case

= 125˚C

Min.

-

4.5

-

Typ.

-

5.5

2.6

3.3

-

2.2

2.3

45

20

Max.

1

12

2

6.5

3.2

4

400

800

2.5

2.6

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/7

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