查询DS2012SF供应商
DS2012SF
DS2012SF
Rectifier Diode
Replaces September 2001 version, DS4191-4.0 DS4548 -4.1 December 2001
FEATURES
■ Double Side Cooling
■ High Surge Capability
APPLICATIONS
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DS2012SF60
DS2012SF59
DS2012SF58
DS2012SF57
DS2012SF56
DS2012SF55
Lower voltage grades available.
6000
5900
5800
5700
5600
5500
Conditions
= V
V
RSM
RRM
+ 100V
KEY PARAMETERS
V
6000V
RRM
I
1320A
F(AV)
I
16500A
FSM
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2012SF59
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
www.dynexsemi.com
1/7
DS2012SF
CURRENT RATINGS
T
= 75oC unless otherwise stated
case
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
Mean forward current
RMS value
F
Continuous (direct) forward current
Half wave resistive load 1320 A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
T
= 100oC unless otherwise stated
case
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load 947 A
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
Mean forward current
Half wave resistive load, T
UnitsMax.
- 2073 A
- 1897 A
- 1487 A
- 1283 A
UnitsMax.
= 100oC 1015 A
case
I
F(RMS)
I
F
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
T
= 100oC 1594 A
case
T
= 100oC 1480 A
case
Half wave resistive load, T
= 100oC 1067 A
T
case
T
= 100oC 920 A
case
= 100oC 680 A
case
2/7
www.dynexsemi.com
SURGE RATINGS
DS2012SF
I
FSM
2
tI
I
I
FSM
I2t
Surge (non-repetitive) forward current
2
t for fusing
Surge (non-repetitive) forward current
2
I
t for fusing A2s
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 19.5kN
with mounting compound
case
- 1/4 sine
RRM
case
= 150oC
= 150oC
dc
Cathode dc
Double side
Single side
Max. UnitsSymbol Parameter
13.5 kA
6
0.92 x 10
A2s
16.5 kA
1.425 x 10
6
- 0.022oC/W
o
C/W- 0.038Anode dc
o
- 0.052
0.004
-
C/W
o
C/W
- 0.008oC/W
Forward (conducting) - 160
T
vj
T
stg
- kN22.018.0
Virtual junction temperature
Storage temperature range
Clamping force
-
150
–55 175
o
C
o
CReverse (blocking)
o
C
www.dynexsemi.com
3/7