DYNEX DS2009SF User Manual

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DS2009SF
DS2009SF
Rectifier Diode
Replaces September 2001 version, DS4190-4.0 DS4190-4.1 December 2001
FEATURES
Double Side Cooling
High Surge Capability
APPLICATIONS
Rectification
DC Motor Control
Power Supplies
Welding
Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DS2009SF48 DS2009SF47 DS2009SF46 DS2009SF45 DS2009SF44 DS2009SF43
Lower voltage grades available.
4800 4700 4600 4500 4400 4300
Conditions
= V
V
RSM
RRM
+ 100V
KEY PARAMETERS V
4800V
RRM
I
1428A
F(AV)
I
20500A
FSM
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.:
DS2009SF47
Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DS2009SF
CURRENT RATINGS
T
= 75oC unless otherwise stated
case
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
Mean forward current
RMS value
F
Continuous (direct) forward current
Half wave resistive load 1428 A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
= 100oC unless otherwise stated
T
case
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load 1033 A
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
Mean forward current
Half wave resistive load 1105 A
UnitsMax.
- 2242 A
- 2082 A
- 1622 A
- 1424 A
UnitsMax.
I
F(RMS)
I
F
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
- 1735 A
- 1580 A
Half wave resistive load 730 A
- 1145 A
- 960 A
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SURGE RATINGS
DS2009SF
Symbol
I
FSM
2
tI
I
I
FSM
I2t
Surge (non-repetitive) forward current
2
t for fusing
Surge (non-repetitive) forward current
2
I
t for fusing A2s
Parameter
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 19.5kN with mounting compound
case
- 1/4 sine
RRM
case
= 150oC
= 150oC
dc
Cathode dc Double side
Single side
Max. Units
16.5 kA
6
1.35 x 10
A2s
20.5 kA
2.125 x 10
6
- 0.022oC/W
o
C/W- 0.038Anode dc
o
- 0.052
0.004
-
C/W
o
C/W
- 0.008oC/W
Forward (conducting) - 160
T
vj
T
stg
- kN22.018.0
Virtual junction temperature
Storage temperature range
Clamping force
-
150
-55 175
o
C
o
CReverse (blocking)
o
C
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