DYNEX DS2004SF User Manual

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DS2004SF
DS2004SF
Rectifier Diode
Replaces September 2001 version, DS4188-5.0 DS4188-5.1 December 2001
APPLICATIONS
Rectification
Freewheel Diode
DC Motor Control
Power Supplies
Battery Chargers
FEATURES
Double Side Cooling
High Surge Capability
VOLTAGE RATINGS
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DS2004SF28 DS2004SF27 DS2004SF26 DS2004SF25 DS2004SF24
2800 2700 2600 2500 2400
Conditions
V
= V
RSM
RRM
+ 100V
KEY PARAMETERS V
2800V
RRM
I
2372A
F(AV)
I
31250A
FSM
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.:
DS2004SF26
Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DS2004SF
CURRENT RATINGS
T
= 75oC unless otherwise stated
case
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
Mean forward current
RMS value
F
Continuous (direct) forward current
Half wave resistive load 2372 A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
T
= 100oC unless otherwise stated
case
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load 1684 A
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
Mean forward current
Half wave resistive load, 1960 A
UnitsMax.
- 3726 A
- 3352 A
- 2645 A
- 2235 A
UnitsMax.
I
F(RMS)
I
F
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
- 3077 A
- 2750 A
Half wave resistive load 1300 A
- 2040 A
- 1600 A
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SURGE RATINGS
DS2004SF
Symbol
I
FSM
2
tI
I
I
FSM
I2t
Surge (non-repetitive) forward current
2
t for fusing
Surge (non-repetitive) forward current
2
I
t for fusing A2s
Parameter
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 19.5kN with mounting compound
case
- 1/4 sine
RRM
case
= 175oC
= 175oC
dc
Cathode dc Double side
Single side
Max. Units
25.0 kA
6
3.12 x 10
A2s
31.25 kA
4.88 x 10
6
- 0.022oC/W
o
C/W- 0.038Anode dc
o
- 0.052
0.004
-
C/W
o
C/W
- 0.008oC/W
Forward (conducting) - 185
T
vj
T
stg
- kN22.018.0
Virtual junction temperature
Storage temperature range
Clamping force
-
175
–55 180
o
C
o
CReverse (blocking)
o
C
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