DS2002SF
DS2002SF
Rectifier Diode
Replaces September 2001 version, DS4178-5.0 DS4178-5.1 December 2001
APPLICATIONS
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
FEATURES
■ Double Side Cooling
■ High Surge Capability
VOLTAGE RATINGS
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DS2002SF18
DS2002SF17
DS2002SF16
DS2002SF15
DS2002SF14
DS2002SF13
Lower voltage grades available.
1800
1700
1600
1500
1400
1300
Conditions
V
= V
RSM
RRM
+ 100V
KEY PARAMETERS
V
1800V
RRM
I
2996A
F(AV)
I
41250A
FSM
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS2002SF16
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DS2002SF
CURRENT RATINGS
T
= 75oC unless otherwise stated
case
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
Mean forward current
RMS value
F
Continuous (direct) forward current
Half wave resistive load 2996 A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
T
= 100oC unless otherwise stated
case
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load 2093 A
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
Mean forward current
Half wave resistive load 2320 A
UnitsMax.
- 4707 A
- 4122 A
- 3288 A
- 2693 A
UnitsMax.
I
F(RMS)
I
F
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
- 3644 A
- 3300 A
Half wave resistive load 1345 A
- 2110 A
- 1630 A
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SURGE RATINGS
DS2002SF
I
FSM
2
tI
I
I
FSM
I2t
Surge (non-repetitive) forward current
2
t for fusing
Surge (non-repetitive) forward current
2
I
t for fusing A2s
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 19.5kN
with mounting compound
case
- 1/4 sine
RRM
case
= 175oC
= 175oC
dc
Cathode dc
Double side
Single side
Max. UnitsSymbol Parameter
33.0 kA
6
5.44 x 10
A2s
41.25 kA
8.5 x 10
6
- 0.022oC/W
o
C/W- 0.038Anode dc
o
- 0.052
0.004
-
C/W
o
C/W
- 0.008oC/W
Forward (conducting) - 185
T
vj
T
stg
- kN22.018.0
Virtual junction temperature
Storage temperature range
Clamping force
-
175
-55 200
o
C
o
CReverse (blocking)
o
C
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