DYNEX DS1112SG User Manual
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DS1112SG
DS1112SG
Rectifier Diode
Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001
FEATURES
■ Double Side Cooling
■ High Surge Capability
APPLICATIONS
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DS1112SG60
DS1112SG59
DS1112SG58
DS1112SG57
DS1112SG56
DS1112SG55
Lower voltage grades available.
6000
5900
5800
5700
5600
5500
Conditions
V
= V
RSM
RRM
+ 100V
KEY PARAMETERS
V
6000V
RRM
I
811A
F(AV)
I
10500A
FSM
Outline type code: G
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS1112SG58
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DS1112SG
CURRENT RATINGS
T
= 75oC unless otherwise stated
case
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
Mean forward current
RMS value
F
Continuous (direct) forward current
Half wave resistive load 811 A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
T
= 100oC unless otherwise stated
case
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load 534 A
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
Mean forward current
Half wave resistive load, T
UnitsMax.
- 1274 A
- 1172 A
- 839 A
- 727 A
UnitsMax.
= 100oC 630 A
case
I
F(RMS)
I
F
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
= 100oC 990 A
T
case
= 100oC 900 A
T
case
Half wave resistive load, T
= 100oC 644 A
T
case
T
= 100oC 550 A
case
= 100oC 410 A
case
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SURGE RATINGS
DS1112SG
Symbol
I
FSM
2
tI
I
I
FSM
I2t
Surge (non-repetitive) forward current
2
t for fusing
Surge (non-repetitive) forward current
2
I
t for fusing A2s
Parameter
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 12.0kN
with mounting compound
case
- 1/4 sine
RRM
case
= 150oC
= 150oC
dc
Cathode dc
Double side
Single side
Max. Units
8.5 kA
3
360x 10
A2s
10.5 kA
565 x 10
3
- 0.032oC/W
o
C/W- 0.064Anode dc
o
- 0.064
0.008
-
- 0.016
C/W
o
C/W
o
C/W
o
C160-On-state (conducting)
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
150
175
o
C-Reverse (blocking)
o
C–55
kN13.511.5
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