DS1109SG
DS1109SG
Rectifier Diode
Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001
FEATURES
■ Double Side Cooling
■ High Surge Capability
APPLICATIONS
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DS1109SG50
DS1109SG49
DS1109SG48
DS1109SG47
DS1109SG46
DS1109SG45
Lower voltage grades available.
5000
4900
4800
4700
4600
4500
Conditions
V
= V
RSM
RRM
+ 100V
KEY PARAMETERS
V
5000V
RRM
I
910A
F(AV)
I
11500A
FSM
Outline type code: G
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DS1109SG49
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
www.dynexsemi.com
1/7
DS1109SG
CURRENT RATINGS
T
= 75oC unless otherwise stated
case
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
Mean forward current
RMS value
F
Continuous (direct) forward current
Half wave resistive load 910 A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
T
= 100oC unless otherwise stated
case
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load 599 A
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
Mean forward current
Half wave resistive load 710 A
UnitsMax.
- 1430 A
- 1314 A
- 941 A
- 814 A
UnitsMax.
I
F(RMS)
I
F
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
- 1115 A
- 1000 A
Half wave resistive load 450 A
- 706 A
- 570 A
2/7
www.dynexsemi.com
SURGE RATINGS
DS1109SG
I
FSM
2
tI
I
I
FSM
I2t
Surge (non-repetitive) forward current
2
t for fusing
Surge (non-repetitive) forward current
2
I
t for fusing A2s
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 12.0kN
with mounting compound
case
- 1/4 sine
RRM
case
= 150oC
= 150oC
dc
Cathode dc
Double side
Single side
Max. UnitsSymbol Parameter
9.2 kA
3
422 x 10
A2s
11.5 kA
660 x 10
3
- 0.032oC/W
o
C/W- 0.064Anode dc
o
- 0.064
0.008
-
C/W
o
C/W
- 0.016oC/W
Forward (conducting) - 160
T
vj
Virtual junction temperature
150-Reverse (blocking)
T
stg
Storage temperature range
Clamping force-
175
13.511.5
o
o
o
kN
C
C
C-55
www.dynexsemi.com
3/7