DYNEX DNB6315, DNB6314, DNB6313, DNB6312, DNB6311 Datasheet

DNB63
DNB63
Rectifier Diode
Replaces January 2000 version, DS4179-5.0 DS4179-6.0 August 2001
APPLICATIONS
Rectification
Freewheel Diode
DC Motor Control
Power Supplies
Battery Chargers
FEATURES
Double Side Cooling
High Surge Capability
VOLTAGE RATINGS
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DNB63 15 DNB63 14 DNB63 13 DNB63 12 DNB63 11
1500 1400 1300 1200 1100
Conditions
= V
V
RSM
RRM
+ 100V
KEY PARAMETERS V I
F(AV)
I
FSM
RRM
1500V 5794A 57000A
Outline type code: DO200AD
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
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DNB63
CURRENT RATINGS
T
= 75oC unless otherwise stated
case
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
Mean forward current
RMS value
F
Continuous (direct) forward current
Half wave resistive load 5794 A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
T
= 100oC unless otherwise stated
case
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load 4230 A
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
Mean forward current
Half wave resistive load, T
UnitsMax.
- 9101 A
- 7934 A
- 6645 A
- 5468 A
UnitsMax.
= 100oC 4850 A
case
I
F(RMS)
I
F
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
T
= 100oC 7615 A
case
T
= 100oC 6600 A
case
Half wave resistive load, T
T
= 100oC 5560 A
case
T
= 100oC 4500 A
case
= 100oC 3540 A
case
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SURGE RATINGS
DNB63
Symbol
I
FSM
2
tI
I
I
FSM
2
t
I
Surge (non-repetitive) forward current
2
t for fusing
Surge (non-repetitive) forward current
2
I
t for fusing 16.2 x 106A2s
Parameter
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 45.0kN with mounting compound
case
- 1/4 sine
RRM
case
= 190oC
= 190oC
dc
Cathode dc Double side
Single side
Max. Units
52.0 kA
6
13.5 x 10
A2s
57.0 kA
- 0.013oC/W
o
C/W- 0.021Anode dc
o
- 0.034
0.003
-
C/W
o
C/W
- 0.006oC/W
Forward (conducting) -
T
vj
Virtual junction temperature
Reverse (blocking) -
T
stg
-
Storage temperature range
Clamping force
-55 190
40.0 48.0 kN
200
190
o
C
o
C
o
C
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