DNB61
DNB61
Rectifier Diode
Replaces January 2000 version, DS4178-4.0 DS4178-5.0 July 2001
FEATURES
■ Double Side Cooling
■ High Surge Capability
APPLICATIONS
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DNB61 25
DNB61 24
DNB61 22
DNB61 20
DNB61 18
DNB61 16
Lower voltage grades available.
2500
2400
2200
2000
1800
1600
Conditions
V
= V
RSM
RRM
+ 100V
KEY PARAMETERS
V
I
F(AV)
I
FSM
RRM
2500V
3438A
32000A
Outline type code: DO200AD
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:
DNB61 24
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DNB61
CURRENT RATINGS
T
= 75oC unless otherwise stated
case
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
Mean forward current
RMS value
F
Continuous (direct) forward current
Half wave resistive load 3438 A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
T
= 100oC unless otherwise stated
case
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load 2589 A
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
Mean forward current
Half wave resistive load 2880 A
UnitsMax.
- 5401 A
- 4997 A
- 4066 A
- 3586 A
UnitsMax.
I
F(RMS)
I
F
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
- 4520 A
- 4100 A
Half wave resistive load 1870 A
- 2940 A
- 2550 A
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SURGE RATINGS
DNB61
Symbol
I
FSM
2
tI
I
I
FSM
I2t
Surge (non-repetitive) forward current
2
t for fusing
Surge (non-repetitive) forward current
2
I
t for fusing 5.12 x 106A2s
Parameter
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 45.0kN
with mounting compound
case
- 1/4 sine
RRM
case
= 175oC
= 175oC
dc
Cathode dc
Double side
Single side
Max. Units
25.5 kA
6
3.25 x 10
A2s
32.0 kA
- 0.013oC/W
o
C/W- 0.025Anode dc
o
- 0.027
0.003
-
C/W
o
C/W
- 0.006oC/W
Forward (conducting) -
T
vj
Virtual junction temperature
Reverse (blocking) -
T
stg
-
Storage temperature range
Clamping force
–55 200
40.0 48.0 kN
185
175
o
C
o
C
o
C
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