DYNEX DK2710AM, DK2710AK, DK2712AM, DK2712AK Datasheet

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DK27..FA

FEATURES

■ Low Switching Losses At High Frequency

■ Fully Characterised For Operation Up To 20kHz

APPLICATIONS

■ High Power Inverters And Choppers

■ UPS

■ AC Motor Drives

■ Induction Heating

■ Cycloconverters

VOLTAGE RATINGS

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-

Add K to type number for 3/4" 16 UNF thread, e.g. DK27 12FAK
or
Add M to type number for M16 thread, e.g. DK27 12FAM.
Note: Please use the complete part number when ordering

and quote this number in any future correspondance relating
to your order.

KEY PARAMETERS
V

DRM

1200V

I

T(RMS)

290A

I

TSM

5000A

dVdt 200V/

µs

dI/dt 500A/

µs

t

q

20µs

DK27..FA

Fast Switching Thyristor

Replaces January 2000 version, DS4269-3.0 DS4269-4.0 July 2001

DK27 12FA K or M
DK27 10FA K or M

Conditions

V

RSM

= V

RRM

+ 100V

I

DRM

= I

RRM

= 25mA

at V

RRM

or V

DRM

& T

vj

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

1200
1000

Outline type code: TO93

See Package Details for further information.

Fig. 1 Package outline

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DK27..FA

SURGE RATINGS

Conditions

tp ≥ 10ms half sine; T

case

= 125oC

VR = 0% V

RRM

- 1/4 sine

Max. Units

Symbol

Parameter

I

TSM

Surge (non-repetitive) on-state current

I

2

tI

2

t for fusing 125.0 x 103A2s

5.0 kA

THERMAL AND MECHANICAL DATA

Conditions Min. Max. Units

Symbol

Parameter

- 0.13

o

C/WThermal resistance - junction to caseR

th(j-c)

Mounting torque 35.0Nm
with mounting compound

0.06-

o

C/W

Thermal resistance - case to heatsinkR

th(c-h)

125

o

C

T

vj

Virtual junction temperature

T

stg

Storage temperature range

Reverse (blocking)

-

Mounting torque

30.0 35.0 Nm

-40 150

o

C

-

On-state (conducting) - 125

o

C

dc

CURRENT RATINGS

Symbol Parameter Conditions

UnitsMax.

I

T(AV)

Mean on-state current

I

T(RMS)

RMS value

Half wave resistive load, T

case

= 80oC 185 A

T

case

= 80oC 290 A

MEASUREMENT OF RECOVERED CHARGE - Q

RA1

0.5x I

RR

I

RR

Q

RA1

tp = 1ms

I

TM

dIR/dt

Measurement of Q

RA1

: Q

RA1

= IRR x t

RR

2

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DK27..FA

DYNAMIC CHARACTERISTICS

V

TM

ParameterSymbol Conditions

Maximum on-state voltage At 600A peak, T

case

= 25oC

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

, T

case

= 125oC

Gate source 20V, 20Ω
tr < 0.5µs, Tj = 125˚C

dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V

DRM Tj

= 125oC, Gate open circuit

Min. Max. Units

- 1.85 V

-25mA

- 200 V/µs

Repetitive 50Hz

- 500 A/µs

Non-repetitive

- 800 A/µs

Rate of rise of on-state current

dI/dt

V

T(TO)

Threshold voltage At Tvj = 125oC

r

T

On-state slope resistance At Tvj = 125oC

1.2-V

- 1.0 mΩ

Delay timet

gd

1.5* - µs

Total turn-on time

t

(ON)TOT

3* - µs

Tj = 25˚C, IT = 50A,
V

D

= 300V, IG = 1A,

dI/dt = 30A/µs, dI

G

/dt = 1A/µs

*Typical value.

I

H

Holding current Tj = 25oC, ITM = 1A, VD = 12V - 70 mA

T

j

= 125˚C, IT = 200A, VR = 50V,

dV/dt = 200V/µs (Linear to 60% V

DRM

),

dIR/dt = 30A/µs, Gate open circuit

Turn-off timet

q

20- µs

t

q

code: A

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

DRM

= 12V, T

case

= 25oC, RL = 6Ω

ConditionsParameterSymbol

V

GT

Gate trigger voltage V

DRM

= 12V, T

case

= 25oC, RL = 6Ω

I

GT

Gate trigger current

V

GD

Gate non-trigger voltage At V

DRM Tcase

= 125oC, RL = 1kΩ

- 3.0 V

- 200 mA

- 0.2 V

Typ. Max. Units

V

RGM

Peak reverse gate voltage

I

FGM

Peak forward gate current Anode positive with respect to cathode

P

GM

Peak gate power

P

G(AV)

Mean gate power

- 5.0 V

-4A

-16W

- 3.0 W

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DK27..FA

CURVES

Fig.2 Maximum (limit) on-state characteristics

Fig.3 Gate characteristics

Fig.4 Typical recovered charge (for a device rated V

DRM

= 800V, tq = 20µs)