DYNEX DK1312FXM, DK1312FXK, DK1310FXM, DK1310FXK Datasheet

DK13..FX

DK13..FX

Fast Switching Thyristor

Replaces January 2000 version, DS4411-2.0 DS4411-3.0 July 2001

FEATURES

■ Low Switching Losses At High Frequency

■ Fully Characterised For Operation Up To 20kHz

APPLICATIONS

■ High Power Inverters And Choppers

■ UPS

■ AC Motor Drives

■ Induction Heating

■ Cycloconverters

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

DK13 12FX K or M
DK13 10FX K or M

1200
1000

Conditions

V

= V

RSM

I

= I

DRM

RRM

= 15mA

RRM

+ 100V

KEY PARAMETERS
V

DRM

I

T(RMS)

I

TSM

dVdt 200V/
dI/dt 500A/
t

q

1200V
130A
1600A

µs
µs

15µs

at V

RRM

or V

DRM

& T

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-

Add K to type number for 1/2" 20 UNF thread, e.g. DK13 10FXK
or
Add M to type number for M12 thread, e.g. DK13 10FXM.
Note: Please use the complete part number when ordering

and quote this number in any future correspondance relating
to your order.

vj

See Package Details for further information.

Outline type code: TO94

Fig. 1 Package outline

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1/13

DK13..FX

CURRENT RATINGS

Symbol Parameter Conditions

I

T(AV)

I

T(RMS)

Mean on-state current

RMS value

Half wave resistive load, T

T

= 80oC 130 A

case

SURGE RATINGS

Symbol

I

TSM

2

tI

I

Parameter

Surge (non-repetitive) on-state current

2

t for fusing 12.8 x 103A2s

tp ≥ 10ms half sine; T

Conditions

VR = 0% V

RRM

THERMAL AND MECHANICAL DATA

Symbol

th(j-c)

th(c-h)

T

vj

Parameter

Thermal resistance - case to heatsinkR

Virtual junction temperature

dc
Mounting torque 15.0Nm

with mounting compound
On-state (conducting) - 125

Reverse (blocking)

Conditions Min. Max. Units

UnitsMax.

= 80oC83A

case

Max. Units

= 125oC

case

1.6 kA

- 1/4 sine

o

- 0.24

0.08-

125

-

C/WThermal resistance - junction to caseR

o

C/W

o

o

C

C

T

stg

-

Storage temperature range

Mounting torque

MEASUREMENT OF RECOVERED CHARGE - Q

2/13

Measurement of Q

I

TM

tp = 1ms

dIR/dt

RA1

: Q

= IRR x t

RA1

Q

I

RR

2

RA1

0.5x I

RR

RR

RA1

o

-40 150

C

12.0 15.0 Nm

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DYNAMIC CHARACTERISTICS

DK13..FX

ParameterSymbol Conditions

V

TM

I

RRM/IDRM

Maximum on-state voltage At 300A peak, T

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V

Gate source 20V, 20Ω

dI/dt

Rate of rise of on-state current

tr < 0.5µs, Tj = 125˚C

V

T(TO)

r

gd

t

(ON)TOT

I

T

H

q

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC
Delay timet

Total turn-on time

Tj = 25˚C, IT = 50A,
V

= 300V, IG = 1A,

D

dI/dt =50A/µs, dI

Holding current Tj = 25oC, ITM = 1A, VD = 12V 60* - mA

T

= 125˚C, IT = 100A, VR = 50V,

j

Turn-off timet

dV/dt = 200V/µs (Linear to 60% V
dIR/dt = 30A/µs, Gate open circuit

, T

case

DRM Tj

= 25oC

case

= 125oC

= 125oC, Gate open circuit

Repetitive 50Hz

Non-repetitive

/dt = 1A/µs

G

),

DRM

code: X

t

q

Min. Max. Units

- 2.35 V

-15mA

- 200 V/µs

- 500 A/µs

- 800 A/µs

1.5-V

- 2.83 mΩ

-5µs

-3µs

15- µs

*Typical value.

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

GT

I

GT

V

GD

V

RGM

I

FGM

P

GM

P

G(AV)

Gate trigger voltage V

Gate trigger current

Gate non-trigger voltage At V

DRM

V

DRM

= 12V, T
= 12V, T

DRM Tcase

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power

Mean gate power

ConditionsParameterSymbol

= 25oC, RL = 6Ω

case

= 25oC, RL = 6Ω

case

= 125oC, RL = 1kΩ

Typ. Max. Units

- 3.0 V

- 200 mA

- 0.2 V

- 5.0 V

-4A

-16W

- 3.0 W

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DK13..FX

CURVES

Fig.2 Maximum (limit) on-state characteristics

Fig.4 Typical recovered charge (for a device rated V

Fig.3 Gate characteristics

= 600V, tq = 10µs)

DRM

4/13

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