DYNEX DIM800FSS17-A000 Datasheet
DIM800FSS17-A000
C1E1
C2E2
G
Aux E
Aux C
DIM800FSS17-A000
Single Switch IGBT Module
Replaces October 2001 version DS5445-3.0 DS5445-4.0 March 2002
FEATURES
■ 10µs Short Circuit Withstand
■ High Thermal Cycling Capability
■ Non Punch Through Silicon
APPLICATIONS
■ Inverters
■ Motor Controllers
■ Traction Drives
The Powerline range of modules includes half bridge, dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 2400A.
The DIM800FSS17-A000 is a single switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This module is
optimised for traction drives and other applications requiring high
thermal cycling capability.
KEY PARAMETERS
V
CES
* (typ) 2.7V
V
I
C
I
C(PK)
CE(sat)
(max) 800A
(max) 1600A
*(measured at the power busbars and not the auxiliary terminals)
Aux C
G
Aux E
Fig. 1 Single switch circuit diagram
1700V
External connection
C2C1
E1 E2
External connection
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800FSS17-A000
Note: When ordering, please use the whole part number.
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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DIM800FSS17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I2t
V
isol
Q
PD
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
2
Diode I
t value
Isolation voltage - per module
Partial discharge - per module
Test Conditions
= 0V
V
GE
-
T
= 68˚C
case
1ms, T
T
case
V
R
= 105˚C
case
= 25˚C, Tj = 150˚C
= 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
= 1500V, V2 = 1100V, 50Hz RMS
1
Max.
1700
±20
800
1600
6000
120
4000
10
Units
V
V
A
A
W
2
kA
V
PC
s
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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THERMAL AND MECHANICAL RATINGS
DIM800FSS17-A000
Internal insulation material: Al2O
Baseplate material: Cu
Creepage distance: 20mm
Clearance: 10mm
CTI (Critical Tracking Index): 175
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink
Parameter
(per module)
T
T
stg
Junction temperature
j
Storage temperature range
3
Test Conditions
Continuous dissipation -
Min.
-
Typ.
Max.
-
21
Units
˚C/kW
junction to case
Continuous dissipation -
-
-
40
˚C/kW
junction to case
Mounting torque 5Nm
-
-
8
˚C/kW
(with mounting grease)
Transistor
Diode
-
-
-
–40
150
-
125
-
-
125
˚C
˚C
˚C
-
Screw torque
Mounting - M6
Electrical connections - M4
Electrical connections - M8
-
-
-
-
-
-
10
5
Nm
2
Nm
Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
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