DYNEX DIM800FSM17-A000 Datasheet
DIM800FSM17-A000
DIM800FSM17-A000
Single Switch IGBT Module
Preliminary Information
Replaces May 2001, version DS5461-1.0 DS5461-1.0 May 2001
FEATURES
■ 10µs Short Circuit Withstand
■ High Thermal Cycling Capability
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates
APPLICATIONS
■ Inverters
■ Motor Controllers
■ Traction Drives
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM800FSM17-A000 is a single switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This module is
optimised for traction drives and other applications requiring high
thermal cycling capability.
KEY PARAMETERS
V
CES
* (typ) 2.7V
V
I
C
I
C(PK)
CE(sat)
(max) 800A
(max) 1600A
*(measured at the power busbars and not the auxiliary terminals)
Aux C
G
Aux E
Fig. 1 Single switch circuit diagram
1700V
External connection
C2C1
E1 E2
External connection
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Aux C
Aux E
C1E1
ORDERING INFORMATION
Order As:
DIM800FSM17-A000
Note: When ordering, please use the whole part number.
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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G
C2E2
Outline type code: F
DIM800FSM17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I2t
V
isol
Q
PD
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
2
Diode I
t value
Isolation voltage - per module
Partial discharge - per module
Test Conditions
= 0V
V
GE
-
T
= 75˚C
case
1ms, T
T
case
V
R
= 105˚C
case
= 25˚C, Tj = 150˚C
= 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
= 1500V, V2 = 1100V, 50Hz RMS
1
Max.
1700
±20
800
1600
6940
120
4000
10
Units
V
V
A
A
W
2
kA
V
pC
s
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 20mm
Clearance: 10mm
CTI (Critical Tracking Index): 175
DIM800FSM17-A000
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min.
-
-
-
-
-
–40
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
18
40
8
150
125
125
5
2
10
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
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