DYNEX DIM800DDM12-A000 Datasheet

DIM800DDM12-A000

13

24

12

11

10

7

6

5

8

9

DIM800DDM12-A000

Dual Switch IGBT Module

Preliminary Information

DS5528-1.1 March 2002

FEATURES

■ 10µs Short Circuit Withstand

■ High Thermal Cycling Capability

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ Inverters

■ Motor Controllers

■ Traction Drives

The Powerline range of modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.

The DIM800DDM12-A000 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised applications requiring high thermal cycling capability.

KEY PARAMETERS

1(E1)

3(C1)

1200V

2(C2)

4(E2)

12(C

11(G2)

10(E

2

)

2

)

V

CES

* (typ) 2.2V

V I

C

I

C(PK)

CE(sat)

(max) 800A (max) 1600A

*(measured at the power busbars and not the auxiliary terminals)

5(E1)

6(G1)

1

)

7(C

Fig. 1 Dual switch circuit diagram

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM800DDM12-A000

Note: When ordering, please use the whole part number.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

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(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Outline type code: D

DIM800DDM12-A000

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

I2t

V

isol

Q

PD

Parameter

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

2

Diode I

t value

Isolation voltage - per module

Partial discharge - per module

Test Conditions

= 0V

V

GE

-

T

= 85˚C

case

1ms, T

T

case

V

R

= 110˚C

case

= 25˚C, Tj = 150˚C

= 0, tp = 10ms, Tvj = 125˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

IEC1287. V

= 1200V, V2 = 900V, 50Hz RMS

1

Max.

1200

±20

800

1600

6940

100

2500

10

Units

V

A

W

2

kA

V

PC

s

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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THERMAL AND MECHANICAL RATINGS

Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 20mm Clearance: 10mm CTI (Critical Tracking Index): 175

DIM800DDM12-A000

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-h)

T

j

T

stg

-

Parameter

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Thermal resistance - case to heatsink

(per module)

Junction temperature

Storage temperature range

Screw torque

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

junction to case

Mounting torque 5Nm

(with mounting grease)

Transistor

Diode

-

Mounting - M6

Electrical connections - M4

Electrical connections - M8

Min.

-

–40

-

Typ.

-

Max.

18

40

8

150

125

5

2

10

Units

˚C/kW

˚C

Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

www.dynexsemi.com