DYNEX DIM600DCM17-A000 Datasheet

DIM600DCM17-A000

IGBT Chopper Module

Replaces September 2001, version DS5491-1.1 DS5491-2.0 March 2002

FEATURES

■ 10µs Short Circuit Withstand

■ High Thermal Cycling Capability

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ Choppers

■ Motor Controllers

■ Traction Drives

The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.

The DIM600DCM17-A000 is a 1700V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised for traction drives and other applications requiring high thermal cycling capability.

KEY PARAMETERS

1(E1)

3(C1)

1700V

2(C2)

4(E2)

V

CES

* (typ) 2.7V

V I

C

I

C(PK)

CE(sat)

(max) 600A (max) 1200A

*(measured at the power busbars and not the auxiliary terminals)

5(E1)

6(G1)

1

)

7(C

Fig. 1 Chopper circuit diagram

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM600DCM17-A000

Note: When ordering, please use the whole part number.

Outline type code: D

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11

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DIM600DCM17-A000

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

I2t

V

isol

Q

PD

Parameter

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

2

Diode I

t value (IGBT arm)

2

t value (Diode arm)

Isolation voltage - per module

Partial discharge - per module

Test Conditions

= 0V

V

GE

-

T

= 70˚C

case

1ms, T

T

case

V

R

= 105˚C

case

= 25˚C, Tj = 150˚C

= 0, tp = 10ms, Tvj = 125˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS

Max.

1700

±20

600

1200

4630

120

4000

10

Units

V

A

W

2

kA

2

kA

V

pC

s

2/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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THERMAL AND MECHANICAL RATINGS

Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 20mm Clearance: 10mm CTI (Critical Tracking Index): 175

DIM600DCM17-A000

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-h)

T

j

T

stg

-

Parameter

Thermal resistance - transistor (per arm)

Thermal resistance - diode (IGBT arm)

Thermal resistance - diode (Diode arm)

Thermal resistance - case to heatsink

(per module)

Junction temperature

Storage temperature range

Screw torque

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

junction to case

Mounting torque 5Nm

(with mounting grease)

Transistor

Diode

-

Mounting - M6

Electrical connections - M4

Electrical connections - M8

Min.

-

–40

-

Typ.

-

Max.

27

40

8

150

125

5

2

10

Units

˚C/kW

˚C

Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11

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DIM600DCM17-A000

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

†

V

F

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

†

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage (IGBT arm)

Diode forward voltage (Diode arm)

Diode forward voltage (IGBT arm)

Diode forward voltage (Diode arm)

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 30mA, VGE = V

I

C

CES

VGE = 15V, IC = 600A

= 15V, IC = 600A, , T

V

GE

DC

= 1ms

t

p

= 600A

I

F

IF = 600A, T

= 125˚C

case

CE

, T

= 125˚C

case

= 125˚C

Min.

-

4.5

-

Typ.

-

5.5

2.7

3.4

-

2.0

2.1

Max.

1

20

4

6.5

3.2

4.0

600

1200

2.3

2.4

Units

mA

µA

V

A

V

= 25V, VGE = 0V, f = 1MHz

CE

= 25V, VGE = 0V, f = 1MHz

V

CE

Tj = 125˚C, VCC = 1000V,

R

SC

C

ies

C

res

L

M

INT

Data

Input capacitance

Reverse transfer capacitance

Module inductance - per arm

Internal transistor resistance - per arm

Short circuit. I

SC

tp ≤ 10µs, V

IEC 60747-9

Note:

†

Measured at the power busbars and not the auxiliary terminals)

* L is the circuit inductance + L

M

CE(max)

= V

-

– L*. di/dt

CES

-

I

1

I

2

45

3.8

20

0.27

2780

2400

nF

-

nF

-

nH

-

mΩ

-

A

4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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