DYNEX DIM400LSS17-A000 Datasheet
DIM400LSS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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FEATURES
■ 10µs Short Circuit Withstand
■ Non Punch Through Silicon
■ Isolated Copper Base
APPLICATIONS
■ Inverters
■ Motor Controllers
■ Induction Heating
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM400LSS17-A000 is a single switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400LSS17-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1700V
V
CE(sat)
* (typ) 2.7V
I
C
(max) 400A
I
C(PK)
(max) 800A
*(measured at the power busbars and not the auxiliary terminals)
DIM400LSS17-A000
Single Switch IGBT Module
Replaces issue February 2002, version DS5497-2.0 DS5497-3.0 March 2002
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: L
(See package details for further information)
2(E)
3(G
1
)
1(C)
5(E1)
4(C1)
12
3
5
4
DIM400LSS17-A000
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
V
GE
= 0V
-
T
case
= 68˚C
1ms, T
case
= 105˚C
T
case
= 25˚C, Tj = 150˚C
V
R
= 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1500V, V2 = 1100V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I2t
V
isol
Q
PD
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25˚C unless stated otherwise
Units
V
V
A
A
W
kA
2
s
V
PC
Max.
1700
±20
400
800
2976
30
4000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
DIM400LSS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Al2O
3
Baseplate material: Cu
Creepage distance: 20mm
Clearance: 8mm
CTI (Critical Tracking Index): 175
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Max.
42
80
8
150
125
125
5
2
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
–40
-
-
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