DYNEX DIM200PHM33-A000 Datasheet
DIM200PHM33-A000
DIM200PHM33-A000
Half Bridge IGBT Module
Preliminary Information
Replaces August 2001, version DS5464-3.0 DS5464-4.0 October 2001
FEATURES
■ 10µs Short Circuit Withstand
■ High Thermal Cycling Capability
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates
APPLICATIONS
■ High Reliability Inverters
■ Motor Controllers
■ Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM200PHM33-A000 is a half bridge 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This device is
optimised for traction drives and other applications requiring high
thermal cycling capability.
KEY PARAMETERS
V
CES
V
I
C
I
C(PK)
CE(sat)
(typ) 3.2V
(max) 200A
(max) 400A
1(E1/C2)
2(C1)
Fig. 1 Half bridge circuit diagram
3300V
1)
5(E
1)
4(G
1)
8(C
3(E2)
7(E
6(G
2)
2)
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PHM33-A000
Note: When ordering, please use the whole part number.
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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DIM200PHM33-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I2t
V
isol
Q
PD
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
2
Diode I
t value (Diode arm)
Isolation voltage - per module
Partial discharge - per module
Test Conditions
VGE = 0V
-
= 80˚C
T
case
1ms, T
T
case
V
R
= 115˚C
case
= 25˚C, Tj = 150˚C
= 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
= 2450V, V2 = 1800V, 50Hz RMS
1
Max.
3300
±20
200
400
2315
20
6000
10
Units
V
V
A
A
W
2
kA
V
pC
s
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 33mm
Clearance: 20mm
CTI (Critical Tracking Index): 175
DIM200PHM33-A000
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Parameter
Thermal resistance - transistor (per switch)
Thermal resistance - diode (per switch)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M5
Min.
-
-
-
-
-
–40
-
-
Typ.
-
-
-
-
-
-
-
-
Max.
54
108
16
150
125
125
5
4
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
www.dynexsemi.com
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