DYNEX DIM200MHS17-A000 Datasheet
DIM200MHS17-A000
DIM200MHS17-A000
Half Bridge IGBT Module
Replaces issue February 2002, version DS5459-3.0 DS5459-4.0 March 2002
FEATURES
■ 10µs Short Circuit Withstand
■ Non Punch Through Silicon
■ Isolated Copper Base
APPLICATIONS
■ Inverters
■ Motor Controllers
■ Traction Drives
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM200MHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
KEY PARAMETERS
V
CES
* (typ) 2.7V
V
I
C
I
C(PK)
CE(sat)
(max) 200A
(max) 400A
*(measured at the power busbars and not the auxiliary terminals)
2
11(C
)
1(E1C2)
1
)
9(C
Fig. 1 Half bridge circuit diagram
1700V
2(E2)
6(G
7(E
3(C1)
5(E
4(G
2
)
2
)
1
)
1
)
ORDERING INFORMATION
Order As:
DIM200MHS17-A000
Note: When ordering, please use the whole part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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11
10
8
9
1
2
3
6
7
5
4
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
DIM200MHS17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I2t
V
isol
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
2
Diode I
t value
Isolation voltage - per module
Test Conditions
= 0V
V
GE
-
T
= 65˚C
case
1ms, T
T
case
V
R
= 110˚C
case
= 25˚C, Tj = 150˚C
= 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max.
1700
±20
200
400
1488
7.5
4000
Units
V
V
A
A
W
2
kA
V
s
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
THERMAL AND MECHANICAL RATINGS
DIM200MHS17-A000
Internal insulation material: Al2O
Baseplate material: Cu
Creepage distance: 20mm
Clearance: 8mm
CTI (Critical Tracking Index): 175
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
Parameter
(per module)
T
T
stg
Junction temperature
j
Storage temperature range
3
Test Conditions
Continuous dissipation -
Min.
-
Typ.
Max.
-
84
Units
˚C/kW
junction to case
Continuous dissipation -
-
176
-
˚C/kW
junction to case
Mounting torque 5Nm
-
-
15
˚C/kW
(with mounting grease)
Transistor
Diode
-
-
-
–40
150
-
125
-
-
125
˚C
˚C
˚C
-
Screw torque
Mounting - M6
Electrical connections - M6
-
-
-
-
5
Nm
5
Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
www.dynexsemi.com
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