DYNEX DIM1200FSM17-A000 Datasheet
DIM1200FSM17-A000
C1E1
C2E2
G
Aux E
Aux C
DIM1200FSM17-A000
Single Switch IGBT Module
Replaces May 2001, version DS5456-1.1 DS5456-2.0 March 2002
FEATURES
■ 10µs Short Circuit Withstand
■ High Thermal Cycling Capability
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates
APPLICATIONS
■ High Reliability Inverters
■ Motor Controllers
■ Traction Drives
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM1200FSM17-A000 is a single switch 1700V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for traction drives and other
applications requiring high thermal cycling capability.
KEY PARAMETERS
V
CES
* (typ) 2.7V
V
I
C
I
C(PK)
CE(sat)
(max) 1200A
(max) 2400A
*(measured at the power busbars and not the auxiliary terminals)
Aux C
G
Aux E
Fig. 1 Single switch circuit diagram
1700V
External connection
C2C1
E1 E2
External connection
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1200FSM17-A000
Note: When ordering, please use the whole part number.
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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Outline type code: F
DIM1200FSM17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I2t
V
isol
Q
PD
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
2
Diode I
t value
Isolation voltage - per module
Partial discharge - per module
Test Conditions
VGE = 0V
-
= 75˚C
T
case
1ms, T
T
case
V
R
= 105˚C
case
= 25˚C, Tj = 150˚C
= 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
= 1500V, V2 = 1100V, 50Hz RMS
1
Max.
1700
±20
1200
2400
10.4
480
4000
10
Units
V
V
A
A
kW
2
kA
V
pC
s
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 20mm
Clearance: 10mm
CTI (Critical Tracking Index): 175
DIM1200FSM17-A000
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min.
-
-
-
-
-
–40
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
12
20
8
150
125
125
5
2
10
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
www.dynexsemi.com
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