DYNEX DGT409BCA Datasheet

DGT409BCA

Reverse Blocking Gate Turn-off Thyristor

Replaces January 2000 version, DS4414-4.0 DS4414-4.1 February 2002

APPLICATIONS

The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters (CSI). Reverse recovery ratings and characteristics are included.

FEATURES

■ Reverse Blocking Capability

■ Double Side Cooling

■ High Reliability In Service

■ High Voltage Capability

■ Fault Protection Without Fuses

■ Turn-off Capability Allows Reduction In Equipment Size

And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements

ORDERING INFORMATION

Order as: DGT409BCA6565

KEY PARAMETERS

I

TCM

V

DRM/VDRM

dV

/dt 1000V/µs

D

di

/dt 300A/µs

T

1500A 6500V

Outline type code: CA

See Package Details for further information

Fig. 1 Package outline

1/11

DGT409BCA

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.

Tj = 115˚C unless staed otherwise

Symbol Parameter Conditions Max.

V

DRM

V

RRM

I

TCM

I

TSM

I2t

/dt

di

T

Repetitive peak off-state voltage

Surge (non-repetitive) on-state current

I2t for fusing

Critical rate of rise of on-state current 300

IDM = 100mA V6500

I

= 100mA V6500Repetitive peak reverse voltage

RRM

VD = 4300V, diGQ/dt = 20A/µs, CS = 2.0µFA1500Repetitive peak controllable on-state current

10ms half sine.

= 3000V, IT = 800A, IFG > 20A, tr > 1.5µsA/µs

V

D

VD = 3000V, RGK ≤ 1.5Ω

dVD/dt

L

Rate of rise of off-state voltage

V

= 3000V, VRG = –2V

D

I

Peak stray inductance in snubber circuit 200 nH

S

= 1500A, VDM = 6000V, dIGQ/dt = 20A/µs, CS = 2µF

T

GATE RATINGS

Symbol Parameter Conditions

Min.

Units

3

45 x 10

175 V/µs

1000 V/µs

kA

2

A

s

UnitsMax.

V

RGM

I

FGM

P

FG(AV)

P

RGM

diGQ/dt

t

ON(min)

t

OFF(min)

RGM

Peak forward gate current

Average forward gate power

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissable on time

Minimum permissable off time

Continuous reverse gate-cathode current 50 mA-I

This value may be exceeded during turn-off

-

V

= 16V, No gate cathode resistor

RGM

20

15

-Peak reverse gate voltage

25

70

10

-

15

-

60

-50

V

A

W

kW

A/µs

µs

- µs150

2/11

THERMAL RATINGS AND MECHANICAL DATA

DGT409BCA

Symbol Parameter Conditions Max.Min.

Double side cooled

R

th(j-hs)

DC thermal resistance - junction to heatsink surface

Anode side cooled

Cathode side cooled

R

th(c-hs)

T

OP/Tstg

Contact thermal resistance

Virtual junction temperature

vj

Clamping force 12.0kN With mounting compound

Operating junction/storage temperature range

-

Clamping force

per contact

CHARACTERISTICS

Tj = 115oC unless stated otherwise

Symbol Parameter

TM

On-state voltageV

At 200A peak, I

Conditions

= 4A d.c.

G(ON)

Units

- 0.046oC/W

-

- 0.124

- 0.009

-

-40

11.0

115

15.0

o

C/W0.073

o

C/W

o

C/W

o

kN

C

Min. Max. Units

-4V

I

E

Q

I

RRM

V

I

RGM

E

t

DM

GT

ON

t

d

t

OFF

gs

gf

gq

GQ

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Reverse gate cathode current

Turn-on energy

Delay time

Rise time

r

Turn-off energy

Storage time

Fall time

Gate controlled turn-off time

Turn-off gate charge

V

= 6500V, VRG = 0V - 100 mA

DRM

At V

= 6500V - 100 mA

RRM

VD = 24V, IT = 100A, Tj = 25oC-1V

VD = 24V, IT = 100A, Tj = 25oC-2A V

= 16V, No gate/cathode resistor

RGM

VD = 3000V IT = 400A, dIT/dt = 150A/µs IFG = 20A, tr < 1.5µs

50-

-7µs

mA

mJ2500-

µs3-

- 2500 mJ

µs

µC

I

= 800A, VDM = 3000V

T

Snubber Cap CS = 2µF, diGQ/dt = 20A/µs

See Figs. 16 and 17

- 3600

Q

I

GQT

GQM

Total turn-off gate charge

Peak reverse gate current

- 7200 µC

- 350 A

3/11

DGT409BCA

0.9x V

D

0.9x I

T

dVD/dt

D

V

T

I

V

DM

V

D

Anode voltage and current

0.1x V

D

t

d

r

t

gt

I

dIFG/dt

0.1x I

FG

V

FG

t

w1

0.1x I

0.5x I

Gate voltage and current

Recommended gate conditions to switch off I I

= 30A

FG

I

= 4A d.c.

G(ON)

t

= 20µs

w1(min)

I

= 270A typical

GQM

di

/dt = 30A/µs

GQ

Q

= 2200µC

GQ

V

= 2V

RG(min)

V

= 15V

RG(max)

GQ

GQM

I

GQM

Q

GQ

= 800A:

TCM

I

DP

V

t

gs

t

gf

t

gq

I

G(ON)

TAIL

V

(RG)BR

RG

V

4/11

These are recommended Dynex Semiconductor conditions. Other conditions are permitted

according to users gate drive specifications.

Fig.2 General switching waveforms