DYNEX DGT408BRP4540 Datasheet

DGT408BRP

DGT408BRP

Reverse Blocking Gate Turn-off Thyristor

Target Information

DS4415-2.1 February 2002

FEATURES

■ Reverse Blocking Capability

■ Double Side Cooling

■ High Reliability In Service

■ High Voltage Capability

■ Fault Protection Without Fuses

■ High Surge Current Capability

■ Turn-off Capability Allows Reduction In Equipment Size

And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements

APPLICATIONS

■ Variable speed A.C. motor drive inverters (VSD-AC)

■ Uninterruptable Power Supplies

■ High Voltage Converters

■ Choppers

■ Welding

■ Induction Heating

■ DC/DC Converters.

KEY PARAMETERS
I

TCM

V

DRM/VRRM

dV

/dt 1000V/µs

D

di

/dt 300A/µs

T

800A
4500V

Outline type code: P

(See Package Details for further information)

Fig. 1 Package outline

VOLTAGE RATINGS

Repetitive Peak Off-state Voltage

V

DRM

V

4500DGT408BRP4540

Repetitive Peak Reverse Voltage

V

RRM

V

4500

ConditionsType Number

= 115oC, IDM = 50mA,

T

vj

I

RRM

CURRENT RATINGS

Symbol Parameter Conditions Max.

I

TCM

I

T(AV)

I

T(RMS)

Repetitive peak controllable on-state current

Mean on-state current

RMS on-state current A

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V

= V

D

, Tj = 115oC, diGQ/dt = 30A/µs, Cs = 2.0µF

DRM

THS = 80oC. Double side cooled. Half sine 50Hz.

THS = 80oC. Double side cooled. Half sine 50Hz.

= 50mA

-

-

Units

A800

A

1/6

DGT408BRP

SURGE RATINGS

Symbol Parameter

I

TSM

I2t

diT/dt Critical rate of rise of on-state current 300

dVD/dt

L

Surge (non-repetitive) on-state current

I2t for fusing

10ms half sine. Tj = 115oC

10ms half sine. Tj =115oC
VD = 3000V, IT = 800A, Tj = 115oC, IFG > 30A,

Rise time > 1.5µs
To 66% V

DRM

Rate of rise of off-state voltage

To 66% V

Peak stray inductance in snubber circuit 200 nH

S

DRM

Conditions

; RGK ≤ 1.5Ω, Tj = 115oC
; VRG = -2V, Tj = 115oC

-

GATE RATINGS

Symbol Parameter Conditions

V

P

RGM

I

FGM

FG(AV)

Peak forward gate current

Average forward gate power

This value maybe exceeded during turn-off

Min.

Max. Units

6.0

0.18 x 10

1000 V/µs

-Peak reverse gate voltage

20

-

kA

6

A2s

A/µs

-V/µs

UnitsMax.

16

70

10

V

A

W

P

RGM

diGQ/dt

t

ON(min)

t

OFF(min)

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissable on time
Minimum permissable off time

THERMAL RATINGS AND MECHANICAL DATA

Symbol Parameter Conditions Max.Min.

Double side cooled

R

th(j-hs)

R

th(c-hs)

T

T

OP/Tstg

DC thermal resistance - junction to heatsink
surface

Contact thermal resistance

Virtual junction temperature

vj

Operating junction/storage temperature range

Anode side cooled

Cathode side cooled
Clamping force 12.0kN

With mounting compound

per contact

-

15

15

60

-20

- µs100

Units

- 0.041oC/W

-

- 0.1

- 0.009

-

-40

125

125

o

o

o

kW

A/µs

µs

C/W0.07

C/W

C/W

o

C

o

C

2/6

-

Clamping force

11.0

15.0

kN

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